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Author: Hsiao-Hui Chen Publisher: ISBN: Category : Thin film devices Languages : en Pages : 336
Book Description
"Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.
Author: Hsiao-Hui Chen Publisher: ISBN: Category : Thin film devices Languages : en Pages : 336
Book Description
"Low Temperature Oxide (LTO) thin films were prepared using a Low Pressure Chemical Vapor Deposition process. The process was characterized by applying traditional statistical studies and response surface technique. The uniformities within wafer and from wafer to wafer were examined by determining the mean and the standard deviation of films thicknesses. Response surface methodology was employed to determine the optimum process conditions. Time, temperature and gas flow ratio were used as the experimental factors. Index of refraction and deposition rate were used as the experimental responses. Additionally, etch rate, density, dielectric constant and infrared (IR) spectra were found for the silicon dioxide films prepared at the determined optimum condition. The IR spectra were obtained by employing Fourier Transform Infrared Spectroscopy (FTIR). The average deposition rate was found to be 46 A per minute and the average index of refraction was 1.44. The calculated density, activation energy, etch rate, dielectric constant and dielectric strength agreed with reported values. A double metal test run was performed using LTO oxide. The results indicated that the recommended baseline LTO process is suitable for multilayer metallization processes."--Abstract.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
Depositions of high quality SiO[sub 2] and SnO[sub 2] films from the reaction of homoleptic amido precursors M(NMe[sub 2])4 (M = Si, Sn) and oxygen were carried out in an atmospheric pressure chemical vapor deposition r. The films were deposited on silicon, glass and quartz substrates at temperatures of 250 to 450C. The silicon dioxide films are stoichiometric (O/Si = 2.0) with less than 0.2 atom % C and 0.3 atom % N and have hydrogen contents of 9 [plus-minus] 5 atom %. They are deposited with growth rates from 380 to 900 [angstrom]/min. The refractive indexes of the SiO[sub 2] films are 1.46, and infrared spectra show a possible Si-OH peak at 950 cm[sup [minus]1]. X-Ray diffraction studies reveal that the SiO[sub 2] film deposited at 350C is amorphous. The tin oxide films are stoichiometric (O/Sn = 2.0) and contain less than 0.8 atom % carbon, and 0.3 atom % N. No hydrogen was detected by elastic recoil spectroscopy. The band gap for the SnO[sub 2] films, as estimated from transmission spectra, is 3.9 eV. The resistivities of the tin oxide films are in the range 10[sup [minus]2] to 10[sup [minus]3] [Omega]cm and do not vary significantly with deposition temperature. The tin oxide film deposited at 350C is cassitterite with some (101) orientation.
Author: Daniel Dobkin Publisher: Springer Science & Business Media ISBN: 9781402012488 Category : Technology & Engineering Languages : en Pages : 298
Book Description
Principles of Chemical Vapor Deposition provides a simple introduction to heat and mass transfer, surface and gas phase chemistry, and plasma discharge characteristics. In addition, the book includes discussions of practical films and reactors to help in the development of better processes and equipment. This book will assist workers new to chemical vapor deposition (CVD) to understand CVD reactors and processes and to comprehend and exploit the literature in the field. The book reviews several disparate fields with which many researchers may have only a passing acquaintance, such as heat and mass transfer, discharge physics, and surface chemistry, focusing on key issues relevant to CVD. The book also examines examples of realistic industrial reactors and processes with simplified analysis to demonstrate how to apply the principles to practical situations. The book does not attempt to exhaustively survey the literature or to intimidate the reader with irrelevant mathematical apparatus. This book is as simple as possible while still retaining the essential physics and chemistry. The book is generously illustrated to assist the reader in forming the mental images which are the basis of understanding.
Author: Chris R. Kleijn Publisher: Birkhäuser ISBN: 3034877412 Category : Science Languages : en Pages : 138
Book Description
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.
Author: Hideki Matsumura Publisher: John Wiley & Sons ISBN: 352734523X Category : Technology & Engineering Languages : en Pages : 438
Book Description
The authoritative reference on catalytic chemical vapor deposition, written by the inventor of the technology. This comprehensive book covers a wide scope of Cat-CVD and related technologies from the fundamentals to the many applications, including the design of a Cat-CVD apparatus. Featuring contributions from four senior leaders in the field, including the father of catalytic chemical vapor deposition, it also introduces some of the techniques used in the observation of Cat-CVD related phenomena so that readers can understand the concepts of such techniques. Catalytic Chemical Vapor Deposition: Technology and Applications of Cat-CVD begins by reviewing the analytical tools for elucidating the chemical reactions in Cat-CVD, such as laser-induced fluorescence and deep ultra-violet absorption, and explains in detail the underlying physics and chemistry of the Cat-CVD technology. Subsequently it provides an overview of the synthesis and properties of Cat-CVD-prepared inorganic and organic thin films. The last parts of this unique book are devoted to the design and operation of Cat-CVD apparatuses and the applications. Provides coherent coverage of the fundamentals and applications of catalytic chemical vapor deposition (Cat-CVD) Assembles in one place the state of the art of this rapidly growing field, allowing new researchers to get an overview that is difficult to obtain solely from journal articles Presents comparisons of different Cat-CVD methods which are usually not found in research papers Bridges academic and industrial research, showing how CVD can be scaled up from the lab to large-scale industrial utilization in the high-tech industry. Catalytic Chemical Vapor Deposition: Technology and Applications is an excellent one-stop resource for researchers and engineers working on or entering the field of Cat-CVD, Hot-Wire CVD, iCVD, and related technologies.
Author: Hsiao-Hui Chen
Author: Hsiao-Hui Chen
Author: 
Author: Daniel Dobkin
Author: Juho Song
Author: 
Author: Chris R. Kleijn
Author: Electrochemical Society. High Temperature Materials Division
Author: Hideki Matsumura
Author: Srivijayaramachandran Sankararaman
Author: Sutham Niyomwas