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Author: Ivo Utke Publisher: OUP USA ISBN: 0199734216 Category : Technology & Engineering Languages : en Pages : 830
Book Description
This book comprehensively reviews the achievements and potentials of a minimally invasive, three-dimensional, and maskless surface structuring technique operating at nanometer scale by using the interaction of focused ion and electron beams (FIB/FEB) with surfaces and injected molecules.
Author: Ivo Utke Publisher: OUP USA ISBN: 0199734216 Category : Technology & Engineering Languages : en Pages : 830
Book Description
This book comprehensively reviews the achievements and potentials of a minimally invasive, three-dimensional, and maskless surface structuring technique operating at nanometer scale by using the interaction of focused ion and electron beams (FIB/FEB) with surfaces and injected molecules.
Author: Marian A. Herman Publisher: Springer Science & Business Media ISBN: 3642970982 Category : Technology & Engineering Languages : en Pages : 394
Book Description
This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of such MBE-produced devices as quantum-well lasers, high electron mobility transistors, and superlattice avalanche photodiodes have caused this technology to be intensively developed. The main text of the book is divided into three parts. The first presents and discusses the more important problems concerning MBE equipment. The second discusses the physico-chemical aspects of the crystallization processes of different materials (mainly semiconductors) and device structures. The third part describes the characterization methods which link the physical properties of the grown film or structures with the technological parameters of the crystallization procedure. Latest achievements in the field are emphasized, such as solid source MBE, including silicon MBE, gas source MBE, especially metalorganic MBE, phase-locked epitaxy and atomic-layer epitaxy, photoassisted molecular layer epitaxy and migration enhanced epitaxy.
Author: E. Kasper Publisher: CRC Press ISBN: 1351085069 Category : Technology & Engineering Languages : en Pages : 260
Book Description
This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: Jon Orloff Publisher: Springer Science & Business Media ISBN: 1461507650 Category : Technology & Engineering Languages : en Pages : 304
Book Description
In this book, we have attempted to produce a reference on high resolution focused ion beams (FIBs) that will be useful for both the user and the designer of FIB instrumentation. We have included a mix of theory and applications that seemed most useful to us. The field of FIBs has advanced rapidly since the application of the first field emission ion sources in the early 1970s. The development of the liquid metal ion source (LMIS) in the late 1960s and early 1970s and its application for FIBs in the late 1970s have resulted in a powerful tool for research and for industry. There have been hundreds of papers written on many aspects of LMIS and FIBs, and a useful and informative book on these subjects was published in 1991 by Phil Prewett and Grame Mair. Because there have been so many new applications and uses found for FIBs in the last ten years we felt that it was time for another book on the subject.
Author: John Orton Publisher: OUP Oxford ISBN: 0191061166 Category : Science Languages : en Pages : 529
Book Description
The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Author: Mohamed Henini Publisher: Elsevier ISBN: 0128121378 Category : Science Languages : en Pages : 790
Book Description
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author: Kevin Peter O'Donnell Publisher: Springer Science & Business Media ISBN: 9048128773 Category : Science Languages : en Pages : 366
Book Description
This book summarises recent progress in the science and technology of rare-earth doped nitrides, providing a snapshot of the field at a critical point in its development. It is the first book on rare-earth doped III-Nitrides and semiconductors.
Author: Ivo Utke
Author: Ivo Utke
Author: Marian A. Herman
Author: John Condon Bean
Author: E. Kasper
Author: D. N. Buckley
Author: Jon Orloff
Author: 
Author: John Orton
Author: Mohamed Henini
Author: Kevin Peter O'Donnell