Author: Morton E. Goldberg
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 696
Book Description
Physics of Failure in Electronics
Metallization Systems for Integrated Circuits
Author: Rosemary P. Beatty
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 34
Book Description
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 34
Book Description
Failure Analysis of Integrated Circuits
Author: Lawrence C. Wagner
Publisher: Springer Science & Business Media
ISBN: 1461549191
Category : Technology & Engineering
Languages : en
Pages : 256
Book Description
This "must have" reference work for semiconductor professionals and researchers provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits.
Publisher: Springer Science & Business Media
ISBN: 1461549191
Category : Technology & Engineering
Languages : en
Pages : 256
Book Description
This "must have" reference work for semiconductor professionals and researchers provides a basic understanding of how the most commonly used tools and techniques in silicon-based semiconductors are applied to understanding the root cause of electrical failures in integrated circuits.
Physics of Failure in Electronics
Author: M. E. Goldberg
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 266
Book Description
Publisher:
ISBN:
Category : Electronic apparatus and appliances
Languages : en
Pages : 266
Book Description
NASA Technical Note
Metallization Failures in Integrated Circuits
Author: James Black
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 206
Book Description
The activation energy for the mass transport of aluminum by momentum exchange with conducting electrons has been obtained and equations relating temperature, current density and film structure to conductor life are presented. The activation energy for the reaction appears to be identical to that for the lattice self-diffusion of aluminum modified by factors involving both surface diffusion and grain boundary diffusion of aluminum in aluminum. These latter two factors can be important in films formed by the condensation of aluminum vapor. A method for determining the activation energy for the growth of etch pits into silicon normal to the 111 plane by the solid state diffusion of silicon into aluminum is presented. Studies made on the reduction of silica by aluminum films are described. It is noted that the reaction is rate limited under the aluminum film by the formation of a continuous barrier of aluminum oxide which effectively separates the two reactants. However, the reaction is free to take place at the edges of aluminum stripes where an effective barrier is not formed.
Publisher:
ISBN:
Category : Integrated circuits
Languages : en
Pages : 206
Book Description
The activation energy for the mass transport of aluminum by momentum exchange with conducting electrons has been obtained and equations relating temperature, current density and film structure to conductor life are presented. The activation energy for the reaction appears to be identical to that for the lattice self-diffusion of aluminum modified by factors involving both surface diffusion and grain boundary diffusion of aluminum in aluminum. These latter two factors can be important in films formed by the condensation of aluminum vapor. A method for determining the activation energy for the growth of etch pits into silicon normal to the 111 plane by the solid state diffusion of silicon into aluminum is presented. Studies made on the reduction of silica by aluminum films are described. It is noted that the reaction is rate limited under the aluminum film by the formation of a continuous barrier of aluminum oxide which effectively separates the two reactants. However, the reaction is free to take place at the edges of aluminum stripes where an effective barrier is not formed.
Reliability Abstracts and Technical Reviews
Author:
Publisher:
ISBN:
Category : Reliability (Engineering)
Languages : en
Pages : 920
Book Description
Publisher:
ISBN:
Category : Reliability (Engineering)
Languages : en
Pages : 920
Book Description
ISTFA 2017: Proceedings from the 43rd International Symposium for Testing and Failure Analysis
Author: ASM International
Publisher: ASM International
ISBN: 1627081518
Category : Technology & Engineering
Languages : en
Pages : 666
Book Description
The theme for the November 2017 conference was Striving for 100% Success Rate. Papers focus on the tools and techniques needed for maximizing the success rate in every aspect of the electronic device failure analysis process.
Publisher: ASM International
ISBN: 1627081518
Category : Technology & Engineering
Languages : en
Pages : 666
Book Description
The theme for the November 2017 conference was Striving for 100% Success Rate. Papers focus on the tools and techniques needed for maximizing the success rate in every aspect of the electronic device failure analysis process.
Handbook of RF and Microwave Power Amplifiers
Author: John L. B. Walker
Publisher: Cambridge University Press
ISBN: 0521760100
Category : Technology & Engineering
Languages : en
Pages : 705
Book Description
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Publisher: Cambridge University Press
ISBN: 0521760100
Category : Technology & Engineering
Languages : en
Pages : 705
Book Description
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Microelectronic Failure Analysis
Author:
Publisher: ASM International
ISBN: 0871707691
Category : Technology & Engineering
Languages : en
Pages : 160
Book Description
Provides new or expanded coverage on the latest techniques for microelectronic failure analysis. The CD-ROM includes the complete content of the book in fully searchable Adobe Acrobat format. Developed by the Electronic Device Failure Analysis Society (EDFAS) Publications Committee
Publisher: ASM International
ISBN: 0871707691
Category : Technology & Engineering
Languages : en
Pages : 160
Book Description
Provides new or expanded coverage on the latest techniques for microelectronic failure analysis. The CD-ROM includes the complete content of the book in fully searchable Adobe Acrobat format. Developed by the Electronic Device Failure Analysis Society (EDFAS) Publications Committee