Author: 張玄昇Publisher:
ISBN:
Category :
Languages : en
Pages : 109
Book Description
Fabrication of InAlAs/InGaAs/GaAs Metamorphic High Electron Mobility Transistors(MHEMTs) with Electroless Plated Technology
Author: 張玄昇Fabrication of AlGaAs/InGaAs/GaAs Pseudomorphic High Electron Mobility Transistors (PHEMTs) with Electroless Plated Technology
Author: 黃怡文Fabrication of InGaAs/InAlAs/GaAs Metamorphic High Electron Mobility Transistor (MHEMT)
Author: 李博揚Fabrication of InGaAs/InAlAs/GaAs Metamorphic High Electron Mobility Transistor (MHEMT)
Author: 高忠義Fabrication and Characterization of InAlAs/InGaAs High Electron Mobility Transistors on Plastic Flexible Substrate
Author: Jinshan ShiPublisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
The development of future flexible electronics requires combining high electrical performance devices (i.e. millimeter and sub-millimeter wave electronic devices) with mechanical flexiblility and stability. However, a variety of existing technologies such as organic thin film transistors, amorphous silicon, and polycrystalline-silicon are limited by their poor transport properties. High electron mobility transistors (HEMTs) based on III-V materials have been used in the field of ultra-high frequency microwave applications for a long time. This work develops a feasible method for transferring conventional HEMTs onto the flexible substrate. By the means of adhesive bonding technique, 100nm-gate InAlAs/InGaAs HEMTs have been transferred onto polyimide film (Kapton) and electrically characterized in static and dynamic regime. Through the epitaxial layers optimization, finally, the fabricated devices are able to suppress Kink effect and provide high cut-off frequencies (ft=160GHz and fmax=290GHz) in unbent condition. These microwave characteristics are comparable to those obtained on 100nm-gate HEMTs on rigid substrate. Moreover, measured devices for various bending radius and bending directions show no obvious electrical degradation (lower than 15%).
Author: 陳君威