Author: Sharma, Manoj
Publisher: IGI Global
ISBN: 1522501916
Category : Technology & Engineering
Languages : en
Pages : 423
Book Description
Very Large Scale Integration (VLSI) Systems refer to the latest development in computer microchips which are created by integrating hundreds of thousands of transistors into one chip. Emerging research in this area has the potential to uncover further applications for VSLI technologies in addition to system advancements. Design and Modeling of Low Power VLSI Systems analyzes various traditional and modern low power techniques for integrated circuit design in addition to the limiting factors of existing techniques and methods for optimization. Through a research-based discussion of the technicalities involved in the VLSI hardware development process cycle, this book is a useful resource for researchers, engineers, and graduate-level students in computer science and engineering.
Design and Modeling of Low Power VLSI Systems
Author: Sharma, Manoj
Publisher: IGI Global
ISBN: 1522501916
Category : Technology & Engineering
Languages : en
Pages : 423
Book Description
Very Large Scale Integration (VLSI) Systems refer to the latest development in computer microchips which are created by integrating hundreds of thousands of transistors into one chip. Emerging research in this area has the potential to uncover further applications for VSLI technologies in addition to system advancements. Design and Modeling of Low Power VLSI Systems analyzes various traditional and modern low power techniques for integrated circuit design in addition to the limiting factors of existing techniques and methods for optimization. Through a research-based discussion of the technicalities involved in the VLSI hardware development process cycle, this book is a useful resource for researchers, engineers, and graduate-level students in computer science and engineering.
Publisher: IGI Global
ISBN: 1522501916
Category : Technology & Engineering
Languages : en
Pages : 423
Book Description
Very Large Scale Integration (VLSI) Systems refer to the latest development in computer microchips which are created by integrating hundreds of thousands of transistors into one chip. Emerging research in this area has the potential to uncover further applications for VSLI technologies in addition to system advancements. Design and Modeling of Low Power VLSI Systems analyzes various traditional and modern low power techniques for integrated circuit design in addition to the limiting factors of existing techniques and methods for optimization. Through a research-based discussion of the technicalities involved in the VLSI hardware development process cycle, this book is a useful resource for researchers, engineers, and graduate-level students in computer science and engineering.
Nanoelectronic Devices for Hardware and Software Security
Author: Arun Kumar Singh
Publisher: CRC Press
ISBN: 1000464989
Category : Technology & Engineering
Languages : en
Pages : 353
Book Description
Nanoelectronic Devices for Hardware and Software Security has comprehensive coverage of the principles, basic concepts, structure, modeling, practices, and circuit applications of nanoelectronics in hardware/software security. It also covers the future research directions in this domain. In this evolving era, nanotechnology is converting semiconductor devices dimensions from micron technology to nanotechnology. Nanoelectronics would be the key enabler for innovation in nanoscale devices, circuits, and systems. The motive for this research book is to provide relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology for hardware/software security. There are numerous challenges in the development of models for nanoscale devices (e.g., FinFET, gate-all-around devices, TFET, etc.), short channel effects, fringing effects, high leakage current, and power dissipation, among others. This book will help to identify areas where there are challenges and apply nanodevice and circuit techniques to address hardware/software security issues.
Publisher: CRC Press
ISBN: 1000464989
Category : Technology & Engineering
Languages : en
Pages : 353
Book Description
Nanoelectronic Devices for Hardware and Software Security has comprehensive coverage of the principles, basic concepts, structure, modeling, practices, and circuit applications of nanoelectronics in hardware/software security. It also covers the future research directions in this domain. In this evolving era, nanotechnology is converting semiconductor devices dimensions from micron technology to nanotechnology. Nanoelectronics would be the key enabler for innovation in nanoscale devices, circuits, and systems. The motive for this research book is to provide relevant theoretical frameworks that include device physics, modeling, circuit design, and the latest developments in experimental fabrication in the field of nanotechnology for hardware/software security. There are numerous challenges in the development of models for nanoscale devices (e.g., FinFET, gate-all-around devices, TFET, etc.), short channel effects, fringing effects, high leakage current, and power dissipation, among others. This book will help to identify areas where there are challenges and apply nanodevice and circuit techniques to address hardware/software security issues.
Microelectronics and Signal Processing
Author: Sanket Goel
Publisher: CRC Press
ISBN: 1000383792
Category : Technology & Engineering
Languages : en
Pages : 283
Book Description
Discusses state-of-the-art and the realization of the integrated device to test the amplification proposal of a synthetic nucleic acid template. It covers the control algorithm for designing the Maximum Power Point Tracker (MPPT) enabled electrical interface system. Discusses designing and generating new metasurface antenna for future applications. Covers integration of optical structures with MEMS devices for implementation in Photonic Integrated Circuits. Presents state-of-art in-exact multiplier architectures and their efficient implementation.
Publisher: CRC Press
ISBN: 1000383792
Category : Technology & Engineering
Languages : en
Pages : 283
Book Description
Discusses state-of-the-art and the realization of the integrated device to test the amplification proposal of a synthetic nucleic acid template. It covers the control algorithm for designing the Maximum Power Point Tracker (MPPT) enabled electrical interface system. Discusses designing and generating new metasurface antenna for future applications. Covers integration of optical structures with MEMS devices for implementation in Photonic Integrated Circuits. Presents state-of-art in-exact multiplier architectures and their efficient implementation.
Nanotechnology
Author: Shilpi Birla
Publisher: CRC Press
ISBN: 1000545083
Category : Technology & Engineering
Languages : en
Pages : 312
Book Description
This reference text discusses recent advances in the field of nanotechnology with applications in the fields of electronics sector, agriculture, health services, smart cities, food industry, and energy sector in a comprehensive manner. The text begins by discussing important concepts including bio nanotechnology, nano electronics, nano devices, nano medicine, and nano memories. It then comprehensively covers applications of nanotechnology in different areas including healthcare, energy sector, environment, security and defense, agriculture sector, food industry, automotive sector, smart cities, and Internet of Things (IoT). Aimed at senior undergraduate, graduate students and professionals in the fields of electrical engineering, electronics engineering, nanoscience and nanotechnology, this text: Discusses nano image sensors useful for imaging in medical and for security applications. Covers advances in the field of nanotechnology with their applications. It covers important concepts including neuro simulators, nano medicine, and nano materials. Covers applications of nanotechnology in diverse fields including health sector, agriculture, energy sector, and electronics.
Publisher: CRC Press
ISBN: 1000545083
Category : Technology & Engineering
Languages : en
Pages : 312
Book Description
This reference text discusses recent advances in the field of nanotechnology with applications in the fields of electronics sector, agriculture, health services, smart cities, food industry, and energy sector in a comprehensive manner. The text begins by discussing important concepts including bio nanotechnology, nano electronics, nano devices, nano medicine, and nano memories. It then comprehensively covers applications of nanotechnology in different areas including healthcare, energy sector, environment, security and defense, agriculture sector, food industry, automotive sector, smart cities, and Internet of Things (IoT). Aimed at senior undergraduate, graduate students and professionals in the fields of electrical engineering, electronics engineering, nanoscience and nanotechnology, this text: Discusses nano image sensors useful for imaging in medical and for security applications. Covers advances in the field of nanotechnology with their applications. It covers important concepts including neuro simulators, nano medicine, and nano materials. Covers applications of nanotechnology in diverse fields including health sector, agriculture, energy sector, and electronics.
Scientific and Technical Aerospace Reports
Tunnel Field-effect Transistors (TFET)
Author: Jagadesh Kumar Mamidala
Publisher: John Wiley & Sons
ISBN: 111924630X
Category : Technology & Engineering
Languages : en
Pages : 208
Book Description
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
Publisher: John Wiley & Sons
ISBN: 111924630X
Category : Technology & Engineering
Languages : en
Pages : 208
Book Description
Research into Tunneling Field Effect Transistors (TFETs) has developed significantly in recent times, indicating their significance in low power integrated circuits. This book describes the qualitative and quantitative fundamental concepts of TFET functioning, the essential components of the problem of modelling the TFET, and outlines the most commonly used mathematical approaches for the same in a lucid language. Divided into eight chapters, the topics covered include: Quantum Mechanics, Basics of Tunneling, The Tunnel FET, Drain current modelling of Tunnel FET: The task and its challenges, Modeling the Surface Potential in TFETs, Modelling the Drain Current, and Device simulation using Technology Computer Aided Design (TCAD). The information is well organized, describing different phenomena in the TFETs using simple and logical explanations. Key features: * Enables readers to understand the basic concepts of TFET functioning and modelling in order to read, understand, and critically analyse current research on the topic with ease. * Includes state-of-the-art work on TFETs, attempting to cover all the recent research articles published on the subject. * Discusses the basic physics behind tunneling, as well as the device physics of the TFETs. * Provides detailed discussion on device simulations along with device physics so as to enable researchers to carry forward their study on TFETs. Primarily targeted at new and practicing researchers and post graduate students, the book would particularly be useful for researchers who are working in the area of compact and analytical modelling of semiconductor devices.
2D Nanoscale Heterostructured Materials
Author: Satyabrata Jit
Publisher: Elsevier
ISBN: 0128176792
Category : Technology & Engineering
Languages : en
Pages : 285
Book Description
2D Nanoscale Heterostructured Materials: Synthesis, Properties, and Applications assesses the current status and future prospects for 2D materials other than graphene (e.g., BN nanosheets, MoS2, NbSe2, WS2, etc.) that have already been contemplated for both low-end and high-end technological applications. The book offers an overview of the different synthesis techniques for 2D materials and their heterostructures, with a detailed explanation of the many potential future applications. It provides an informed overview and fundamentals properties related to the 2D Transition metal dichalcogenide materials and their heterostructures. The book helps researchers to understand the progress of this field and points the way to future research in this area. - Explores synthesis techniques of newly evolved 2D materials and their heterostructures with controlled properties - Offers detailed analysis of the fundamental properties (via various experimental process and simulations techniques) of 2D heterostructures materials - Discusses the applications of 2D heterostructured materials in various high-performance devices
Publisher: Elsevier
ISBN: 0128176792
Category : Technology & Engineering
Languages : en
Pages : 285
Book Description
2D Nanoscale Heterostructured Materials: Synthesis, Properties, and Applications assesses the current status and future prospects for 2D materials other than graphene (e.g., BN nanosheets, MoS2, NbSe2, WS2, etc.) that have already been contemplated for both low-end and high-end technological applications. The book offers an overview of the different synthesis techniques for 2D materials and their heterostructures, with a detailed explanation of the many potential future applications. It provides an informed overview and fundamentals properties related to the 2D Transition metal dichalcogenide materials and their heterostructures. The book helps researchers to understand the progress of this field and points the way to future research in this area. - Explores synthesis techniques of newly evolved 2D materials and their heterostructures with controlled properties - Offers detailed analysis of the fundamental properties (via various experimental process and simulations techniques) of 2D heterostructures materials - Discusses the applications of 2D heterostructured materials in various high-performance devices
Physics Briefs
Fundamentals of III-V Semiconductor MOSFETs
Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Compact Modeling
Author: Gennady Gildenblat
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Publisher: Springer Science & Business Media
ISBN: 9048186145
Category : Technology & Engineering
Languages : en
Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.