Fabrication and Testing of Gas Sensors Based on Porous Silicon and Porous Silicon Carbide (3C-SiC) PDF Download
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Author: Dong Thanh Lieu Publisher: ISBN: Category : Languages : en Pages : 138
Book Description
ABSTRACT: Single crystalline cubic silicon carbide (3C-SiC) is one of the promising materials that can be used for high-power, high-frequency, and high-temperature devices. Thus, preparation of high quality single crystalline cubic silicon carbide and reproducible fabricated electronic devices based on 3C-SiC will have important technological impacts. In this thesis, we have developed a method for the fabrication of heterojunction Schottky diode gas sensors based on porous silicon and silicon carbide. Due to the large surface area of the porous layer, the adsorb gas species modify the I-V behavior of the Schottky diode or the silicon/silicon carbide heterojunction. It was found that the I-V behavior of the Schottky diodes strongly depends on the type of gases used. It was shown that a shift in the breakdown voltage ranging from I0V to 40V could be obtained depending on the structure of the gas sensor and the types of gas used. The porous silicon was made by anodization of p-type silicon using a mixture of hydrofluoric acid and ethanol. Chemical vapor deposition (CVD) was used to grow silicon carbide. Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectrometry (SIMS) were used to verify the existence and stoichiometry of SiC in the prepared samples. X-Ray Diffraction and Transmission Electron Microscopy (TEM) were used to verify the crystalline structure of resulting SiC. Atomic Force Microscopy (AFM) tests were used to view the surface morphology of resulting samples.
Author: Dong Thanh Lieu Publisher: ISBN: Category : Languages : en Pages : 138
Book Description
ABSTRACT: Single crystalline cubic silicon carbide (3C-SiC) is one of the promising materials that can be used for high-power, high-frequency, and high-temperature devices. Thus, preparation of high quality single crystalline cubic silicon carbide and reproducible fabricated electronic devices based on 3C-SiC will have important technological impacts. In this thesis, we have developed a method for the fabrication of heterojunction Schottky diode gas sensors based on porous silicon and silicon carbide. Due to the large surface area of the porous layer, the adsorb gas species modify the I-V behavior of the Schottky diode or the silicon/silicon carbide heterojunction. It was found that the I-V behavior of the Schottky diodes strongly depends on the type of gases used. It was shown that a shift in the breakdown voltage ranging from I0V to 40V could be obtained depending on the structure of the gas sensor and the types of gas used. The porous silicon was made by anodization of p-type silicon using a mixture of hydrofluoric acid and ethanol. Chemical vapor deposition (CVD) was used to grow silicon carbide. Fourier Transform Infrared Spectroscopy (FTIR) and Secondary Ion Mass Spectrometry (SIMS) were used to verify the existence and stoichiometry of SiC in the prepared samples. X-Ray Diffraction and Transmission Electron Microscopy (TEM) were used to verify the crystalline structure of resulting SiC. Atomic Force Microscopy (AFM) tests were used to view the surface morphology of resulting samples.
Author: Stephen Lewis Publisher: ISBN: Category : Languages : en Pages : 229
Book Description
This dissertation describes the fabrication and operation of porous silicon gas sensors. The first chapter describes the motivation behind gas sensor research and provides the reader with background knowledge of gas sensors including the terminology and a review of various gas sensors. The following two chapters describe both how the porous silicon gas sensors are created and how they have been tested in the laboratory. Chapter 4 describes the steps required to create arrays of gas sensors to provide for a selective device through the application of patented selective coatings. Chapter 5 proposes a physical model that leads to a numerical solution for predicting the operation of the gas sensor. The next chapter builds from this model to analyze and optimize the experimental methods that are used to test both this and other gas sensors. The final chapter of this dissertation describes the prototype gas sensor system that has most recently been created, the company that was formed to further the development of that system, and the future applications of the porous silicon gas sensor.
Author: Danny Yuan Chan Publisher: ISBN: 9781267288165 Category : Languages : en Pages : 75
Book Description
A thesis describing the construction and evaluation of optical sensors based on porous silicon rugate photonic crystals for the detection of explosive gases such as C2 hydrocarbons and hydrogen. Useful properties of porous silicon for gas sensor applications include tunable pore size, large surface area, convenient surface chemistries, optical transduction of the sensing signal, and the potential for miniaturization. Chapter One introduces the fundamentals of porous silicon, including fabrication, sensing mechanisms, and sensor challenges. Additionally, the advantages and limitations of current point sensor technologies are briefly discussed. Chapter Two focuses on the evaluation of a carbon/porous silicon composite film for the optical detection of C2 hydrocarbons. Porous silicon rugate photonic crystals are used as templates for the fabrication of glassy carbon nanofibers. The resulting carbon/porous silicon composites combine the strong adsorption characteristics of carbon and the optical signal transduction of photonic crystals to increase sensitivity. Chapter Three presents a new method for the fabrication of palladium/porous silicon composite films for the optical detection of hydrogen gas. The two-step synthesis involves seeding of palladium by thermal reduction of palladium ions, followed by growth of palladium nanoparticles in an electroless plating solution. Compared to the previous method of immersion plating, this new method is able to deposit palladium nanoparticles deeper into the porous matrix, thereby increasing the sensitivity.
Author: Raivo Jaaniso Publisher: Elsevier ISBN: 0857098667 Category : Technology & Engineering Languages : en Pages : 571
Book Description
Semiconductor gas sensors have a wide range of applications in safety, process control, environmental monitoring, indoor or cabin air quality and medical diagnosis. This important book summarises recent research on basic principles, new materials and emerging technologies in this essential field. The first part of the book reviews the underlying principles and sensing mechanisms for n- and p-type oxide semiconductors, introduces the theory for nanosize materials and describes the role of electrode–semiconductor interfaces. The second part of the book describes recent developments in silicon carbide- and graphene-based gas sensors, wide bandgap semiconductor gas sensors and micromachined and direct thermoelectric gas sensors. Part 3 discusses the use of nanomaterials for gas sensing, including metal oxide nanostructures, quantum dots, single-alled carbon nanotubes and porous silicon. The final part of the book surveys key applications in environmental monitoring, detecting chemical warfare agents and monitoring gases such as carbon dioxide. Semiconductor gas sensors is a valuable reference work for all those involved in gas monitoring, including those in the building industry, environmental engineers, defence and security specialists and researchers in this field. Provides an overview of resistor and non-resistor sensors Reviews developments in gas sensors and sensing methods, including graphene based sensors and direct thermoelectric sensors Discusses the use of nanomaterials in gas sensing
Author: Tsunenobu Kimoto Publisher: John Wiley & Sons ISBN: 1118313550 Category : Technology & Engineering Languages : en Pages : 565
Book Description
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Ankur Gupta Publisher: CRC Press ISBN: 1000782522 Category : Technology & Engineering Languages : en Pages : 493
Book Description
This book covers the whole range of gas sensing aspects starting from basics, synthesis, processing, characterization, and application developments. All sub-topics within the domain of gas sensors such as active materials, novel nanomaterials, working mechanisms, fabrication techniques, computational approach, and development of microsensors, and latest advancements such as the Internet of Things (IoT) in gas sensors, and nanogenerators, are explained as well. Related manufacturing sections and proposed direction of future research are also reviewed. Features: Covers detailed state-of-the-art specific chemiresistive sensing materials. Presents novel nanomaterial platforms and concepts for resistive gas sensing. Reviews pertinent aspects of smart sensors and IoT sensing. Explains nanotechnology-enabled experimental findings, and future directions of smart gas sensing technology. Explores implication of latest advancements such as IoT in gas sensors, and nanogenerators. This book is aimed at academic researchers and professionals in sensors and actuators, nanotechnology, and materials science.
Author: Serdar Ozdemir Publisher: ISBN: Category : Gas detectors Languages : en Pages :
Book Description
Nanopore covered microporous silicon interfaces have been formed via an electrochemical etch for gas sensor applications. Rapid reversible and sensitive gas sensors have been fabricated. Both top-down and bottom-up approaches are utilized in the process. A nano-pore coated micro-porous silicon surface is modified selectively for sub-ppm detection of NH3, PH3, NO, H2S, SO2. The selective depositions include electrolessly generated SnO2, CuxO, AuxO, NiO, and nanoparticles such as TiO2, MgO doped TiO2, Al2O3, and ZrO2. Flow dynamics are analyzed via numerical simulations and response data. A general coating selection method for chemical sensors is established via an extrapolation on the inverse of the Hard-Soft Acid-Base concept.
Author: Stephen E. Saddow Publisher: Elsevier ISBN: 0123859069 Category : Medical Languages : en Pages : 496
Book Description
Silicon Carbide (SiC) is a wide-band-gap semiconductor biocompatible material that has the potential to advance advanced biomedical applications. SiC devices offer higher power densities and lower energy losses, enabling lighter, more compact and higher efficiency products for biocompatible and long-term in vivo applications ranging from heart stent coatings and bone implant scaffolds to neurological implants and sensors. The main problem facing the medical community today is the lack of biocompatible materials that are also capable of electronic operation. Such devices are currently implemented using silicon technology, which either has to be hermetically sealed so it cannot interact with the body or the material is only stable in vivo for short periods of time. For long term use (permanent implanted devices such as glucose sensors, brain-machine-interface devices, smart bone and organ implants) a more robust material that the body does not recognize and reject as a foreign (i.e., not organic) material is needed. Silicon Carbide has been proven to be just such a material and will open up a whole new host of fields by allowing the development of advanced biomedical devices never before possible for long-term use in vivo. This book not only provides the materials and biomedical engineering communities with a seminal reference book on SiC that they can use to further develop the technology, it also provides a technology resource for medical doctors and practitioners who are hungry to identify and implement advanced engineering solutions to their everyday medical problems that currently lack long term, cost effective solutions. Discusses Silicon Carbide biomedical materials and technology in terms of their properties, processing, characterization, and application, in one book, from leading professionals and scientists Critical assesses existing literature, patents and FDA approvals for clinical trials, enabling the rapid assimilation of important data from the current disparate sources and promoting the transition from technology research and development to clinical trials Explores long-term use and applications in vivo in devices and applications with advanced sensing and semiconducting properties, pointing to new product devekipment particularly within brain trauma, bone implants, sub-cutaneous sensors and advanced kidney dialysis devices
Author: Dong Thanh Lieu
Author: Dong Thanh Lieu
Author: Stephen Lewis
Author: Danny Yuan Chan
Author: 
Author: Raivo Jaaniso
Author: Tsunenobu Kimoto
Author: Ankur Gupta
Author: Serdar Ozdemir
Author: Stephen E. Saddow
Author: Dani Hak