Author: Hao Jia
Publisher:
ISBN:
Category :
Languages : en
Pages : 274
Book Description
Fabrication and Characterization of Hydrogenated Amorphous Silicon Films, CVD Diamond Films, and Their Devices
Fabrication and Characterization of Amorphous Silicon Devices Made by Plasma-enhanced Chemical-vapor Deposition
Author: Cherng-chi Yin
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 142
Book Description
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 142
Book Description
Preparation and Characterization of Hydrogenated Amorphous Silicon Films
Author: Hwa Chao
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 81
Book Description
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 81
Book Description
Characterization of Hydrogenated Amorphous Silicon Films
Author: Ernest Gerald Bylander
Publisher:
ISBN:
Category :
Languages : en
Pages : 332
Book Description
Publisher:
ISBN:
Category :
Languages : en
Pages : 332
Book Description
Fabrication and Characterisation of Amorphous Hydrogenated Silicon Films
Author: Chacorn Vipusanavanish
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 468
Book Description
Publisher:
ISBN:
Category : Amorphous semiconductors
Languages : en
Pages : 468
Book Description
The Physics of Hydrogenated Amorphous Silicon I
Author: J.D. Joannopoulos
Publisher: Springer
ISBN: 9783540128076
Category : Science
Languages : en
Pages : 312
Book Description
With contributions by numerous experts
Publisher: Springer
ISBN: 9783540128076
Category : Science
Languages : en
Pages : 312
Book Description
With contributions by numerous experts
Atomic-scale Characterization of Hydrogenated Amorphous-silicon Films and Devices
Author: Alan C. Gallagher
Publisher:
ISBN:
Category : Light
Languages : en
Pages : 19
Book Description
The research is concerned with improving the electronic properties of hydrogenated amorphous silicon (a-Si:H) films and of photovoltaic (PV) cells that use these films. Two approaches toward this goal are being taken. One is to establish the character of silicon particle growth in the rf glow discharges that are used to make the films and PV cells, and to understand the particle incorporation into the films. The ultimate goal of this effort is to find mitigation techniques that minimize the particle incorporation. During this contract period, we developed a novel particle light-scattering technique that provides a detailed and sensitive diagnostic of small (8-60-nm diameter) particles suspended in the discharge. We used this to measure the particle growth rates and densities, versus conditions in pure-silane discharges. The second program is directed toward measuring the electronic properties of thin-film PV cells, as a function of depth within the cell. The approach being taken is to use a scanning tunneling microscope (STM) to measure the depth-dependent electronic properties of cross-sectioned PV cells. During the present period, measurements on single and tandem amorphous silicon cells have been carried out. Using STM current-voltage spectroscopy, these measurements distinguish the boundaries between the highly conducting and intrinsic layers, and should allow one to deduce the chemical potential versus depth in the cell.
Publisher:
ISBN:
Category : Light
Languages : en
Pages : 19
Book Description
The research is concerned with improving the electronic properties of hydrogenated amorphous silicon (a-Si:H) films and of photovoltaic (PV) cells that use these films. Two approaches toward this goal are being taken. One is to establish the character of silicon particle growth in the rf glow discharges that are used to make the films and PV cells, and to understand the particle incorporation into the films. The ultimate goal of this effort is to find mitigation techniques that minimize the particle incorporation. During this contract period, we developed a novel particle light-scattering technique that provides a detailed and sensitive diagnostic of small (8-60-nm diameter) particles suspended in the discharge. We used this to measure the particle growth rates and densities, versus conditions in pure-silane discharges. The second program is directed toward measuring the electronic properties of thin-film PV cells, as a function of depth within the cell. The approach being taken is to use a scanning tunneling microscope (STM) to measure the depth-dependent electronic properties of cross-sectioned PV cells. During the present period, measurements on single and tandem amorphous silicon cells have been carried out. Using STM current-voltage spectroscopy, these measurements distinguish the boundaries between the highly conducting and intrinsic layers, and should allow one to deduce the chemical potential versus depth in the cell.
Amorphous Silicon Carbide Thin Films
Author: Mariana Amorim Fraga
Publisher:
ISBN: 9781613247747
Category : Amorphous semiconductors
Languages : en
Pages : 0
Book Description
Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
Publisher:
ISBN: 9781613247747
Category : Amorphous semiconductors
Languages : en
Pages : 0
Book Description
Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
Diamond Films Handbook
Author: Jes Asmussen
Publisher: CRC Press
ISBN: 0824743245
Category : Technology & Engineering
Languages : en
Pages : 658
Book Description
The Diamond Films Handbook is an important source of information for readers involved in the new diamond film technology, emphasizing synthesis technologies and diamond film applications. Containing over 1600 references, drawings, photographs, micrographs, equations, and tables, and contributions by experts from both industry and academia, it includes specific chapters that address film characterization methods and the physics and chemistry of film synthesis. Other topics include deposition chemistry, various techniques for diamond synthesis, diamond heat spreaders, thermal management diamond active electronic devices, and diamond film optics.
Publisher: CRC Press
ISBN: 0824743245
Category : Technology & Engineering
Languages : en
Pages : 658
Book Description
The Diamond Films Handbook is an important source of information for readers involved in the new diamond film technology, emphasizing synthesis technologies and diamond film applications. Containing over 1600 references, drawings, photographs, micrographs, equations, and tables, and contributions by experts from both industry and academia, it includes specific chapters that address film characterization methods and the physics and chemistry of film synthesis. Other topics include deposition chemistry, various techniques for diamond synthesis, diamond heat spreaders, thermal management diamond active electronic devices, and diamond film optics.