Fabrication and Characterization of Diamond Films for Piezoresistive Sensors PDF Download

Author: Der-Rern Darrel Wur
Publisher:
ISBN:
Category : Detectors
Languages : en
Pages : 332

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Author: Sondes Sahli
Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 312

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Author: Hao Jia
Publisher:
ISBN:
Category :
Languages : en
Pages : 274

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Author: Dongsung Hong
Publisher:
ISBN:
Category : Diamonds
Languages : en
Pages : 438

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Author: Ratnesh Thapliyal
Publisher:
ISBN:
Category :
Languages : en
Pages : 108

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Author: Arti Tibrewala
Publisher: Cuvillier Verlag
ISBN: 3867270163
Category :
Languages : en
Pages : 165

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 18

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Highly uniform, smooth nano-crystalline diamond films have been fabricated with a magneto-active microwave CVD system. Top and bottom magnet currents were 145A and 60A, while microwave power and substrate temperature were controlled at 1500W and 850°C during deposition. Total processing pressure was regulated at 40 Pa (300 mTorr), with gas flow rates of 30 sccm of hydrogen, 2.4 sccm of methane and 1 sccm of oxygen. Diamond films obtained under the above conditions have grain sizes between 0.1--0.3 [mu]m, a growth rate of 0.1[mu]m/hr and a mean roughness of 14.95 nm. Characterization techniques have involved XRD, Raman spectroscopy, SEM, AFM and TEM. Both X-ray and electron diffraction patterns show no evidence of non-diamond phases. Although a high density of twins and stacking faults were revealed by HREM, compact diamond grains and clean intergranular boundaries (no graphitic or amorphous phases) were observed.

Author: Sattar Mirzakuchaki
Publisher:
ISBN:
Category : Diamond thin films
Languages : en
Pages : 272

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Book Description
Chemical vapor deposited (CVD) diamond thin films grown homoepitaxially as well as on non-diamond substrates have been the subject of intense investigation since the beginning of the last decade. Diamond's remarkable properties such as physical hardness, chemical inertness, high thermal conductivity, high breakdown voltage, and high carrier mobility are the main factors for the attention it has received from many researchers around the world. Although these properties are somewhat degraded in polycrystalline diamond films, they are still superior to many other materials. One of the most potentially useful applications of diamond thin films is in the semiconductor industry. Although a few prototype devices such as field effect transistors and Schottky diodes have been fabricated on diamond, some major obstacles remain to be overcome before full scale commercial applications of diamond as a semiconductor is possible. The high cost of large area monocrystalline diamond substrates has forced researchers to look for alternative substrates for the heteroepitaxial growth of diamond. So far only marginal results have been reported on the growth of highly oriented diamond films and on the heteroepitaxial growth involving substrates that are as costly as diamond. Silicon, as the dominant material in semiconductor industry, has been the subject of much research as a substrate for the growth of polycrystalline diamond. Another problem in development of diamond as a semiconductor is the effective doping of diamond, particularly for n-type conductivity. Although many researchers have studied boron-doped (p-type) diamond thin films in the past several years, there have been few reports on the effects of doping diamond films with phosphorous (n-type). Once these two issues have been solved, other fabrication steps such as oxidation, etching, masking, etc. may be attempted. The present work is a study directed toward solving some of these problems by looking at in-situ doping of n-type hot filament CVD (HFCVD) grown diamond films on silicon substrates. The study includes electrical characterization, stable metallic contacts, effect of silicon substrate surface pretreatment, and selective area deposition. A number of different techniques for inducing diamond nucleation on Si substrates are studied and the resulting diamond films characterized by common techniques such as Raman spectroscopy, X-ray diffraction, optical and scanning electron microscopy, and profilometery. The effect of doping the diamond films with different concentrations of phosphorous as well as calculation of the activation energy by temperature measurement was also carried out in this work. A new technique is presented for the selective deposition of diamond films onto silicon substrates.

Author: Lawrence S. Pan
Publisher: Springer Science & Business Media
ISBN: 1461522579
Category : Technology & Engineering
Languages : en
Pages : 482

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Book Description
The use of diamond for electronic applications is not a new idea. As early as the 1920's diamonds were considered for their use as photoconductive detectors. However limitations in size and control of properties naturally limited the use of diamond to a few specialty applications. With the development of diamond synthesis from the vapor phase has come a more serious interest in developing diamond-based electronic devices. A unique combination of extreme properties makes diamond partiCularly well suited for high speed, high power, and high temperature applications. Vapor phase deposition of diamond allows large area films to be deposited, whose properties can potentially be controlled. Since the process of diamond synthesis was first realized, great progress have been made in understanding the issues important for growing diamond and fabricating electronic devices. The quality of both intrinsic and doped diamond has improved greatly to the point that viable applications are being developed. Our understanding of the properties and limitations has also improved greatly. While a number of excellent references review the general properties of diamond, this volume summarizes the great deal of literature related only to electronic properties and applications of diamond. We concentrate only on diamond; related materials such as diamond-like carbon (DLC) and other wide bandgap semiconductors are not treated here. In the first chapter Profs. C. Y. Fong and B. M. Klein discuss the band structure of single-crystal diamond and its relation to electronic properties.

Author: Enric Brillas
Publisher: John Wiley & Sons
ISBN: 1118062353
Category : Science
Languages : en
Pages : 713

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Book Description
The book gives an overview on the current development status of synthetic diamond films and their applications. Its initial part is devoted to discuss the different types of conductive diamond electrodes that have been synthesized, their preparation methods, and their chemical properties and characterization. The electrochemical properties of diamond films in different scientific areas, with special attention in electroanalysis, are further described. Different strategies to modify these electrodes are also discussed as important technologies with ability to change their electrochemical characteristics for a more specific electroanalytical use. The second part of the book deals with practical applications of diamond electrodes to the industry, organic electrosynthesis, electrochemical energy technology, and biotechnology. Special emphasis is made on the properties of these materials for the production of strong oxidizing species allowing the fast mineralization of organics and their use for water disinfection and decontamination. Recent biotechnological development on biosensors, microelectrodes, and nanostructured electrodes, as well as on neurochemistry, is also presented. The book will be written by a large number of internationally recognized experts and comprises 24 chapters describing the characteristics and theoretical fundaments of the different electrochemical uses and applications of synthetic diamond films.