Author: Karl Harry Zaininger
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 312

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Author: Aurélien Maréchal
Publisher:
ISBN:
Category :
Languages : en
Pages : 0

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Book Description
Over two decades of technological progresses in growth quality, doping control and device processing have led to the emergence of new potentialities for power electronic applications. As diamond represents the ultimate semiconductor owing to its superior physical properties, efforts have been conducted to develop various electronic devices, such as Schottky diodes, field effect transistors, bipolar transistor, p-i-n junctions...As a prerequisite to the development of new generation diamond power devices, on one side, is the development of simulation tools able to anticipate the device electrical properties as well as its architecture in order to take full advantage of the material physical properties. On the other hand, experimental study of the gate contact, the second building block of the transistor, is fundamental in order to develop high performance devices. In this regard, one can consider several open questions: (i) Are the simulation tools able to take into account the specificities of diamond to model electrical devices? (ii) Is the aluminum oxide suitable to develop a MOSFET gate contact? (iii) If so, is the oxide/diamond interface of good enough quality? (iv) Is the fabrication of a diamond MOSFET a technological issue?This PhD project, attend to answer these questions and pave the way towards the inversion mode MOSFET.Emphasize on the diamond physical properties will help to understand why this material is the ultimate WBG semiconductor. State of the art diamond devices will be presented focusing on field effect transistors. A complementary topic for the development of new generation diamond power device is the anticipation of device electrical properties and architecture through finite element base simulation software. Thus the need for reliable simulation tools will be presented.On one hand, the main models implemented in the simulation tools will be presented and emphasize on the diamond electrical properties will be given. For the simulation of diamond metal-oxide-semiconductor field effect transistor (MOSFET), the study of two building blocks is required: the p-n junction and the gate contact. The later ideal properties will be presented while the former will serve as a basis for the calibration of the physical parameters implemented in the finite element based software. Generation-recombination models influence on the simulated p-n junction electrical properties will be discussed. Finally, the simulation of the electrical properties of a diamond metal-oxide-semiconductor field effect transistor (MOSFET) will be shown.On the other hand, focus will be made on diamond metal-oxide-semiconductor capacitor (MOSCAP) fabrication and electrical characterization. Specifically, the interfacial band configuration of the Al2O3/oxygen-terminated diamond (O-diamond) has been investigated using X-ray photoelectron spectroscopy. The results allowed establishing the band diagram of the Al2O3/O-diamond heterostructure. Then, the electrical properties of the diamond MOSCAP will be shown. Specifically, investigation of the interface states density revealed the pinning of the Fermi level at the interface between the Al2O3 and the O-diamond. Moreover, the leakage currents through the Al2O3 layer will be discussed in terms of temperature dependent trap assisted tunneling of holes from the diamond layer to the top gate contact. Finally, the electrical characterization of the first diamond MOSFET, performed at the National Institute for Advanced Industrial Science and Technology (AIST) in Japan, will be presented. Even if this first attempt was unsuccessful, it is promising for the development of diamond MOSFET since the demonstration of the actual realization of the device is clearly established.

Author: Allen Pang-I Ho
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 172

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Book Description

Author: United States. National Aeronautics and Space Administration Scientific and Technical Information Division
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 2300

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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 984

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Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 2084

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Book Description

Author: Ellidus Anno Allan Haan
Publisher:
ISBN:
Category :
Languages : en
Pages : 226

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Book Description

Author: United States. National Aeronautics and Space Administration. Scientific and Technical Information Division
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 2088

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Book Description

Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 1204

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Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 46

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Book Description
An electrochemical technique has been used to grow anodic silicon dioxide (Si02) films of thicknesses approximatelly between 1245 and 2330 ? on (111) p-type silicon wafers. Some properties of the anodic oxide and the associated Si/anodic Si02 interface have been studied by forming metal-oxide-semiconductor (MOS) capacitors using the anodically grown oxide as the dielectric. The silicon dioxide layer has been grown in an electrolyte of potassium nitrate in ethylene glycol at four different molar concentrations in order to study the surface charge density effects by means of the C-V plot technique. In the course of this work attempting to anodically oxidize single-crystal silicon slices, several technical problems have been encountered. One of the most important of these, was the development of an electrode assembly that would enable the immersion of the silicon anode into the anodizing electrolyte in such a way that the whole wafer would be immersed, but allowing an electrical contact to it with little or no current leakage. Consequently, three different electrode assemblies were used through this work in order to find the most appropriate for the anodic oxidation process. The successful one was en electrode assembly in which a silicon rubber 'O' ring is used to form mechanical pressure sealed insulator to secure the semiconductor anode. Experimental results show that the forming voltage, Vf, during anodic growth of Si02 layers in a non-aqueous electrolyte depends linearly on time. Furthermore, the oxide thickness during the anodization of silicon shows a linear dependence on time as well. By comparing experimental C-V curves with the ideal one, it has been inferred the presence of positive fixed charged centers at the interface of Si/anodic Si02. The generation of these fixed charge centers, Qss, in MOS capacitors depends mainly on the molarity of the electrolyte, and as a second order effect, on the anodizing current used in the anodization process.