Author: John ViatellaPublisher:
ISBN:
Category :
Languages : en
Pages : 346
Book Description
Excimer-laser Crystallization of Amorphous Silicon Thin Films
Author: John ViatellaCrystallization and Interfacial Reaction of Amorphous Silicon and Metal Thin Films by Pulsed Excimer Laser Annealing
Author: Connie LewCrystallization of Amorphous Silicon Thin Films Induced by Nanoparticle Seeds
Author: Taekon KimPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
ABSTRACT: Crystallization of amorphous Si (a-Si) thin film has received extensive interest for their attractive applications into Si thin film transistors and Si based solar cells. Among various crystallization techniques, Solid phase crystallization (SPC) and Excimer laser crystallization (ELC) were investigated. Firstly, Solid phase crystallization (SPC) of amorphous silicon thin films deposited by the DC magnetron sputtering system with a modification in nucleation step was investigated at low temperature. The thin film consists of polycrystalline nanoparticles embedded in an amorphous matrix which can act as nuclei during crystallization, resulting in a lower thermal energy for the nucleation. The lowering energy barrier for nucleation would shorten the transition time from amorphous into polycrystalline silicon resulting from the reduction of incubation time and also lower the processing temperature spontaneously. In addition, a comprehensive study of the growth mechanism of the sputtered amorphous silicon thin films is presented during annealing. Samples were prepared with various substrate temperatures and RF power in order to optimize the crystallization of a-Si after the deposition. Also, the effects of annealing condition were examined. Low pressure N2 ambient during SPC promoted crystallization of a-Si thin films and the crystallinity. The low pressure annealing had a large impact on the crystallinity and growth behavior of subsequent films.
Laser Crystallization of Silicon - Fundamentals to Devices
Author: Norbert H. NickelPublisher: Academic Press
ISBN: 0080540945
Category : Technology & Engineering
Languages : en
Pages : 215
Book Description
This book on the Laser Crystallization of Silicon reviews the latest experimental and theoretical studies in the field. It has been written by recognised global authorities and covers the most recent phenomena related to the laser crystallization process and the properties of the resulting polycrystalline silicon. Reflecting the truly interdisciplinary nature of the field that the series covers, this volume will continue to be of great interest to physicists, chemists, materials scientists and device engineers in modern industry. Valuable applications for industry, particularly in the fabrication of thin-film electronics Each chapter has been peer reviewed An important and timely contribution to the semiconductor literature
Excimer Laser Crystallization of Silicon Thin-Films for Monolithic 3D Integration
Author: Fabio CartaPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
As the dimensional scaling of complementary MOS (CMOS) devices reaches its limits, three dimensional ICs (3DICs) are increasingly being considered as a path to achieve higher device densities. 3DICs offer a way to increase density by using multiple device layers on the same die, reducing the interconnect distance and allowing for a decrease in signal delay. Among different fabrication techniques, monolithic 3D integration is potentially more cost effective but requires high performance devices, a process compatible with transistor integration in the BEOL stack and needs to deliver a high device density and uniformity in order to be adopted by the very large scale integration (VLSI) industry. This work focuses on a particular laser crystallization technique to achieve monolithic device integration. The technique, called Excimer Laser Crystallization (ELC), makes use of an excimer laser to achieve a large grain polycrystalline thin-film starting from an amorphous layer, allowing integration of high quality thin-film transistors (TFTs).
Amorphous and Heterogeneous Silicon Thin Films - 2000: Volume 609
Author: Robert W. CollinsPublisher:
ISBN:
Category : Science
Languages : en
Pages : 1118
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Crystalline Silicon Thin Films for Thin-film Transistorapplications Via Excimer Laser Irradiation
Author: Robert SposiliThin film transistors. 1. Amorphous silicon thin film transistors
Author: Yue KuoPublisher: Springer Science & Business Media
ISBN: 9781402075056
Category : Thin film transistors
Languages : en
Pages : 538
Book Description
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Excimer Laser Crystallization of Silicon Films: Artificially-Controlled Super Lateral Growth for Grain Boundary Location-Controlled and Single Crystal Island Materials for Thin Film Transistor Applications
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 59
Book Description
This report describes new excimer-laser crystallization (ELC) techniques for producing high-quality Si films for AMLCD applications. These artificially controlled super-lateral growth (ACSLG) processes deliver crystalline silicon films with microstructures optimized for thin-film transistor applications. The ACSLG methods described herein include: (1) a low-temperature method for producing grain-boundary-location-controlled (GLC) Si films on glass substrates, (2) a high-temperature method for producing single-crystal islands (SCI) on quartz substrates, (3) a realistic two-dimensional program for simulation of ELC, and (4) low-temperature sequential lateral solidification of Si films. Preliminary TFT devices have yielded near-record performance characteristics and demonstrate that the ACSLG materials are superior to existing materials for fabrication of TFTs. The sequential lateral solidification (SLS) process possesses two characteristics not found in any other technique: (1) it can produce the best material (single-crystal silicon films) for TFT devices, and (2) it does so directly on low-cost, low-temperature substrates. The impact of the SLS process will be to create a new materials/device technology: low-temperature single-crystal silicon TFTs, which will: (1) displace conventional low- and high-temperature polycrystalline silicon TFT technology; (2) eliminate the need to utilize silicon-on-insulator (SOI) processes; and (3) ultimately enable the realization of highly integrated AMLCDs and system-on-glass products.
Crystallization of Polycrystalline Silicon Thin Film by Excimer Laser Annealin
Author: Siti Noraiza Ab. RazakPublisher:
ISBN:
Category : Silicon
Languages : en
Pages :
Book Description