Author: Ansgar Jüngel
Publisher: Birkhäuser
ISBN: 303488334X
Category : Mathematics
Languages : en
Pages : 301
Book Description
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Quasi-hydrodynamic Semiconductor Equations
Author: Ansgar Jüngel
Publisher: Birkhäuser
ISBN: 303488334X
Category : Mathematics
Languages : en
Pages : 301
Book Description
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Publisher: Birkhäuser
ISBN: 303488334X
Category : Mathematics
Languages : en
Pages : 301
Book Description
This book presents a hierarchy of macroscopic models for semiconductor devices, studying three classes of models in detail: isentropic drift-diffusion equations, energy-transport models, and quantum hydrodynamic equations. The derivation of each, including physical discussions, is shown. Numerical simulations for modern semiconductor devices are performed, showing the particular features of each. The author develops modern analytical techniques, such as positive solution methods, local energy methods for free-boundary problems and entropy methods.
Semiconductor Equations
Author: Peter A. Markowich
Publisher: Springer Science & Business Media
ISBN: 3709169615
Category : Mathematics
Languages : en
Pages : 261
Book Description
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Publisher: Springer Science & Business Media
ISBN: 3709169615
Category : Mathematics
Languages : en
Pages : 261
Book Description
In recent years the mathematical modeling of charge transport in semi conductors has become a thriving area in applied mathematics. The drift diffusion equations, which constitute the most popular model for the simula tion of the electrical behavior of semiconductor devices, are by now mathe matically quite well understood. As a consequence numerical methods have been developed, which allow for reasonably efficient computer simulations in many cases of practical relevance. Nowadays, research on the drift diffu sion model is of a highly specialized nature. It concentrates on the explora tion of possibly more efficient discretization methods (e.g. mixed finite elements, streamline diffusion), on the improvement of the performance of nonlinear iteration and linear equation solvers, and on three dimensional applications. The ongoing miniaturization of semiconductor devices has prompted a shift of the focus of the modeling research lately, since the drift diffusion model does not account well for charge transport in ultra integrated devices. Extensions of the drift diffusion model (so called hydrodynamic models) are under investigation for the modeling of hot electron effects in submicron MOS-transistors, and supercomputer technology has made it possible to employ kinetic models (semiclassical Boltzmann-Poisson and Wigner Poisson equations) for the simulation of certain highly integrated devices.
Etude mathematique et simulations numeriques de quelques equations de Boltzmann
L'Equation de Boltzmann des semiconducteurs : etude mathematique et simulation numerique
Author: Francisco Jose Mustieles Moreno
Publisher:
ISBN:
Category :
Languages : fr
Pages :
Book Description
Publisher:
ISBN:
Category :
Languages : fr
Pages :
Book Description
Edition XII, the Update, 1997/98
Author:
Publisher:
ISBN: 9781861490124
Category : Engineering
Languages : en
Pages : 176
Book Description
Publisher:
ISBN: 9781861490124
Category : Engineering
Languages : en
Pages : 176
Book Description
Mathematical Reviews
Contents of Contemporary Mathematical Journals
INIS Atomindex
Government Reports Annual Index
Author:
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 1834
Book Description
Publisher:
ISBN:
Category : Government reports announcements & index
Languages : en
Pages : 1834
Book Description
Documentation of Plasma Physics. Pt. 1, Experimental Plasma Physics [and] Theoretical Plasma Physics
Author:
Publisher:
ISBN:
Category : Plasma (Ionized gases)
Languages : en
Pages : 792
Book Description
Publisher:
ISBN:
Category : Plasma (Ionized gases)
Languages : en
Pages : 792
Book Description