Author: Benoit Deveaud
Publisher:
ISBN:
Category :
Languages : en
Pages : 183
Book Description
ETUDE DE LA PHOTOLUMINESCENCE DE GAAS:CR, GA::(1-X)AL::(X)AS:CR POUR DIFFERENTES COMPOSITIONS CHIMIQUES, LONGUEURS D'ONDES EXCITATRICES, ET SOUS PRESSION. L'UTILISATION D'UN LASER YAG:ND (1,06 MU M) A PERMIS D'OBSERVER LES TRANSITIONS DUES AU CHROME ISOLE, NON COMPLEXE. L'UTILISATION DE LA PRESSION A PERMIS D'OBSERVER LA LUMINESCENCE INTERNE DE CR**(2+). DES CALCULS SUPPOSANT L'EXISTENCE D'UN EFFET JAHN TELLER DANS L'ETAT EXCITE **(5)E COMPRENANT UN TRES FAIBLE EFFET QUADRATIQUE ONT PERMIS DE RETROUVER LA FORME DE BANDE OBSERVEE
Etude Des Propriétés de Luminescence Du Chrome Dans GaAs
Author: Benoit Deveaud
Publisher:
ISBN:
Category :
Languages : en
Pages : 183
Book Description
ETUDE DE LA PHOTOLUMINESCENCE DE GAAS:CR, GA::(1-X)AL::(X)AS:CR POUR DIFFERENTES COMPOSITIONS CHIMIQUES, LONGUEURS D'ONDES EXCITATRICES, ET SOUS PRESSION. L'UTILISATION D'UN LASER YAG:ND (1,06 MU M) A PERMIS D'OBSERVER LES TRANSITIONS DUES AU CHROME ISOLE, NON COMPLEXE. L'UTILISATION DE LA PRESSION A PERMIS D'OBSERVER LA LUMINESCENCE INTERNE DE CR**(2+). DES CALCULS SUPPOSANT L'EXISTENCE D'UN EFFET JAHN TELLER DANS L'ETAT EXCITE **(5)E COMPRENANT UN TRES FAIBLE EFFET QUADRATIQUE ONT PERMIS DE RETROUVER LA FORME DE BANDE OBSERVEE
Publisher:
ISBN:
Category :
Languages : en
Pages : 183
Book Description
ETUDE DE LA PHOTOLUMINESCENCE DE GAAS:CR, GA::(1-X)AL::(X)AS:CR POUR DIFFERENTES COMPOSITIONS CHIMIQUES, LONGUEURS D'ONDES EXCITATRICES, ET SOUS PRESSION. L'UTILISATION D'UN LASER YAG:ND (1,06 MU M) A PERMIS D'OBSERVER LES TRANSITIONS DUES AU CHROME ISOLE, NON COMPLEXE. L'UTILISATION DE LA PRESSION A PERMIS D'OBSERVER LA LUMINESCENCE INTERNE DE CR**(2+). DES CALCULS SUPPOSANT L'EXISTENCE D'UN EFFET JAHN TELLER DANS L'ETAT EXCITE **(5)E COMPRENANT UN TRES FAIBLE EFFET QUADRATIQUE ONT PERMIS DE RETROUVER LA FORME DE BANDE OBSERVEE
Fabrication of GaAs Devices
Author: Albert G. Baca
Publisher: IET
ISBN: 9780863413537
Category : Technology & Engineering
Languages : en
Pages : 372
Book Description
This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Publisher: IET
ISBN: 9780863413537
Category : Technology & Engineering
Languages : en
Pages : 372
Book Description
This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
ESSDERC 88
Author: Jean-Pierre Nougier
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 868
Book Description
Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 868
Book Description
Scientific and Technical Aerospace Reports
Crystal Growth and Evaluation of Silicon for VLSI and ULSI
Author: Golla Eranna
Publisher: CRC Press
ISBN: 1482232812
Category : Science
Languages : en
Pages : 432
Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Publisher: CRC Press
ISBN: 1482232812
Category : Science
Languages : en
Pages : 432
Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Wafer Bonding
Author: Marin Alexe
Publisher: Springer Science & Business Media
ISBN: 9783540210498
Category : Science
Languages : en
Pages : 524
Book Description
During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Publisher: Springer Science & Business Media
ISBN: 9783540210498
Category : Science
Languages : en
Pages : 524
Book Description
During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Government reports annual index
Journal de physique
Analytical Chemistry for Cultural Heritage
Author: Rocco Mazzeo
Publisher: Springer
ISBN: 3319528041
Category : Science
Languages : en
Pages : 370
Book Description
The series Topics in Current Chemistry Collections presents critical reviews from the journal Topics in Current Chemistry organized in topical volumes. The scope of coverage is all areas of chemical science including the interfaces with related disciplines such as biology, medicine and materials science. The goal of each thematic volume is to give the non-specialist reader, whether in academia or industry, a comprehensive insight into an area where new research is emerging which is of interest to a larger scientific audience.Each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years are presented using selected examples to illustrate the principles discussed. The coverage is not intended to be an exhaustive summary of the field or include large quantities of data, but should rather be conceptual, concentrating on the methodological thinking that will allow the non-specialist reader to understand the information presented. Contributions also offer an outlook on potential future developments in the field.
Publisher: Springer
ISBN: 3319528041
Category : Science
Languages : en
Pages : 370
Book Description
The series Topics in Current Chemistry Collections presents critical reviews from the journal Topics in Current Chemistry organized in topical volumes. The scope of coverage is all areas of chemical science including the interfaces with related disciplines such as biology, medicine and materials science. The goal of each thematic volume is to give the non-specialist reader, whether in academia or industry, a comprehensive insight into an area where new research is emerging which is of interest to a larger scientific audience.Each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years are presented using selected examples to illustrate the principles discussed. The coverage is not intended to be an exhaustive summary of the field or include large quantities of data, but should rather be conceptual, concentrating on the methodological thinking that will allow the non-specialist reader to understand the information presented. Contributions also offer an outlook on potential future developments in the field.
Exposés Et Communications Présentés À Montpellier Les 5, 6 Et 7 Septembre 1973 Au Colloque Sur Les Propriétés Optiques Des Semiconducteurs À Grande Bande Interdite
Author:
Publisher:
ISBN:
Category : Energy gap (Physics)
Languages : fr
Pages : 320
Book Description
Publisher:
ISBN:
Category : Energy gap (Physics)
Languages : fr
Pages : 320
Book Description