Author: U. E. MöcklPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
Electromigration Induced Resistance Changes in Passivated Aluminum Thin Film Conductors
Author: U. E. MöcklMaterials Reliability in Microelectronics III: Volume 309
Author: Kenneth P. RodbellPublisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 520
Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Metals Abstracts
Author: Investigation of Electromigration in Thin Film Aluminum at Low Temperatures
Author: David W. BantonPublisher:
ISBN:
Category :
Languages : en
Pages : 109
Book Description
This thesis project collects electromigration induced time to failure data from unglassed and glassed one percent silicon doped aluminum test patterns at four current densities: 4.5, 4.75, 5.5, and 6.25 mega-amps per square centimeter. At 4.5 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative thirteen and seventy degrees centigrade. From the data, the activation energy is calculated to be approximately 0.3 electron-volts. At 4.75 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative fifty and eighty degrees centigrade. From the data, the activation energy is calculated to be between approximately 0.3 electron-volts between ten and eighty degrees centigrade. At 5.5 mega-amps per square centimeter, unglassed pattern time to failure data is collected between negative fifty and twenty degrees centigrade. From the data, the activation energy is calculated to be between 0.35 and 0.43 volts for temperatures between negative seven and twenty degrees centigrade. At 6.25 mega-amps per square centimeter, glassed pattern time to failure data is collected between negative thirteen and eighty degrees centigrade. From the data, the activation energy is calculated to be approximately 0.3 electronvolts at temperatures between twenty and eighty degress centigrade. These ranges of activation energies indicate that surface electromigration is the dominant failure mechanism. Keywords: Electromigration; Low temperature; Silicon doped aluminum; Thin films; Aluminum.
Electromigration Studies on A1 (alloy) Thin Film Conductors by Means of 1/f Noise Measurements and High-resolution Resistance Experiments
Author: Jan Richard KraayeveldPublisher:
ISBN: 9789090089676
Category :
Languages : en
Pages : 98
Book Description
Zusammenfassung niederländisch.
Microcircuit Reliability Bibliography
Author: Stress-Induced Phenomena in Metallization
Author: P. S. HoPublisher: A I P Press
ISBN:
Category : Science
Languages : en
Pages : 328
Book Description
Annotation Proceedings of the June 1995 workshop, reporting on new and basic results in electromigration and stress-induced void formation. Sections on stress characteristics and void formation in thin films and interconnects, and electromigration and damage mechanisms in interconnects, contain research in areas such as stresses in passivated gold and metal lines; electrical measurement of stress- induced void growth; modeling electromigration in multi-level interconnects; comparison of electromigration in submicron Al(Cu) and Cu thin-film lines; and resistance oscillations induced by DC electromigration. No index. Annotation c. by Book News, Inc., Portland, Or.
Author: 
Author: Choongun Kim
Author: Dnyanesh Patkar