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Author: Paul S. Ho Publisher: Cambridge University Press ISBN: 1009287796 Category : Technology & Engineering Languages : en Pages :
Book Description
Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
Author: Paul S. Ho Publisher: Cambridge University Press ISBN: 1009287796 Category : Technology & Engineering Languages : en Pages :
Book Description
Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.
Author: Jens Lienig Publisher: Springer ISBN: 3319735586 Category : Technology & Engineering Languages : en Pages : 171
Book Description
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Author: A.S. Nowick Publisher: Elsevier ISBN: 0323147763 Category : Science Languages : en Pages : 506
Book Description
Diffusion in Solids: Recent Developments provides an overview of diffusion in crystalline solids. This book discusses the various aspects of the theory of diffusion. Organized into nine chapters, this volume starts with a discussion on the process of diffusion in solids. This book then examines the tools that supplement the conventional diffusion measurements, including electromigration, ionic conductivity, isotope effects, and vacancy wind effects. This text explores the molecular dynamic calculation by which the interatomic forces must be assumed. Other chapters discuss the method of measurement of the isotope effect on diffusion, which is the most powerful method of determining relevant information about the correlation factor. This volume extensively discusses diffusion in organic and amorphous materials, as well as interstitial diffusion in solids. The final chapter deals with ionic motion and diffusion in various groups of materials called fast ionic conductors. Solid-state physicists, materials scientists, physical chemists, and electrochemists will find this book extremely useful.
Author: Cemal Basaran Publisher: Springer Nature ISBN: 3030577724 Category : Science Languages : en Pages : 452
Book Description
This text describes the mathematical formulation and proof of the unified mechanics theory (UMT) which is based on the unification of Newton’s laws and the laws of thermodynamics. It also presents formulations and experimental verifications of the theory for thermal, mechanical, electrical, corrosion, chemical and fatigue loads, and it discusses why the original universal laws of motion proposed by Isaac Newton in 1687 are incomplete. The author provides concrete examples, such as how Newton’s second law, F = ma, gives the initial acceleration of a soccer ball kicked by a player, but does not tell us how and when the ball would come to a stop. Over the course of Introduction to Unified Mechanics Theory, Dr. Basaran illustrates that Newtonian mechanics does not account for the thermodynamic changes happening in a system over its usable lifetime. And in this context, this book explains how to design a system to perform its intended functions safely over its usable life time and predicts the expected lifetime of the system without using empirical models, a process currently done using Newtonian mechanics and empirical degradation/failure/fatigue models which are curve-fit to test data. Written as a textbook suitable for upper-level undergraduate mechanics courses, as well as first year graduate level courses, this book is the result of over 25 years of scientific activity with the contribution of dozens of scientists from around the world including USA, Russia, Ukraine, Belarus, Spain, China, India and U.K.
Author: P. S. Ho Publisher: ISBN: 9781139505819 Category : Electrodiffusion Languages : en Pages :
Book Description
"Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers"--
Author: Tao Li Publisher: John Wiley & Sons ISBN: 3527332715 Category : Technology & Engineering Languages : en Pages : 434
Book Description
Unique in its scope, this book comprehensively combines various synthesis strategies with applications for nanogap electrodes. Clearly divided into four parts, the monograph begins with an introduction to molecular electronics and electron transport in molecular junctions, before moving on to a whole section devoted to synthesis and characterization. The third part looks at applications with single molecules or self-assembled monolayers, and the whole is rounded off with a section on interesting phenomena observed using molecular-based devices.
Author: Cher Ming Tan Publisher: World Scientific ISBN: 9814273325 Category : Technology & Engineering Languages : en Pages : 312
Book Description
Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Author: A.V. Khotkevich Publisher: Springer Science & Business Media ISBN: 146152265X Category : Science Languages : en Pages : 162
Book Description
The characteristics of electrical contacts have long attracted the attention of researchers since these contacts are used in every electrical and electronic device. Earlier studies generally considered electrical contacts of large dimensions, having regions of current concentration with diameters substantially larger than the characteristic dimensions of the material: the interatomic distance, the mean free path for electrons, the coherence length in the superconducting state, etc. [110]. The development of microelectronics presented to scientists and engineers the task of studying the characteristics of electrical contacts with ultra-small dimensions. Characteristics of point contacts such as mechanical stability under continuous current loads, the magnitudes of electrical fluctuations, inherent sensitivity in radio devices and nonlinear characteristics in connection with electromagnetic radiation can not be understood and altered in the required way without knowledge of the physical processes occurring in contacts. Until recently it was thought that the electrical conductivity of contacts with direct conductance (without tunneling or semiconducting barriers) obeyed Ohm's law. Nonlinearities of the current-voltage characteristics were explained by joule heating of the metal in the region of the contact. However, studies of the current-voltage characteristics of metallic point contacts at low (liquid helium) temperatures [142] showed that heating effects were negligible in many cases and the nonlinear characteristics under these conditions were observed to take the form of the energy dependent probability of inelastic electron scattering, induced by various mechanisms.
Author: Tapan Gupta Publisher: Springer Science & Business Media ISBN: 1441900764 Category : Technology & Engineering Languages : en Pages : 433
Book Description
Since overall circuit performance has depended primarily on transistor properties, previous efforts to enhance circuit and system speed were focused on transistors as well. During the last decade, however, the parasitic resistance, capacitance, and inductance associated with interconnections began to influence circuit performance and will be the primary factors in the evolution of nanoscale ULSI technology. Because metallic conductivity and resistance to electromigration of bulk copper (Cu) are better than aluminum, use of copper and low-k materials is now prevalent in the international microelectronics industry. As the feature size of the Cu-lines forming interconnects is scaled, resistivity of the lines increases. At the same time electromigration and stress-induced voids due to increased current density become significant reliability issues. Although copper/low-k technology has become fairly mature, there is no single book available on the promise and challenges of these next-generation technologies. In this book, a leader in the field describes advanced laser systems with lower radiation wavelengths, photolithography materials, and mathematical modeling approaches to address the challenges of Cu-interconnect technology.
Author: Paul S. Ho
Author: Paul S. Ho
Author: Jens Lienig
Author: A.S. Nowick
Author: Cemal Basaran
Author: Electrochemical Society
Author: P. S. Ho
Author: Tao Li
Author: Cher Ming Tan
Author: A.V. Khotkevich
Author: Tapan Gupta