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Author: John Cameron McCulloch Publisher: ISBN: Category : Vanadium Languages : en Pages : 96
Book Description
The dc conductivity of single crystals of vanadium pentoxide was measured in the three crystallographic directions. The temperature range examined was -165°C to +25°C. The activation energy of the conduction process was isotropic and found to be .56 ev. The conductivity was anisotropic. Measurements of the Hall effect were attempted with a dc and ac apparatus, but the signal was too low to be observed. However, an upper limit of 71 cm3/coulomb for the Hall coefficient was calculated, and the upper limit computed for the mobility was .4 cm2/volt sec. A model is proposed for the conduction mechanism. It suggests that the electrical conduction is a two -step process. The electron is ionized from a V4-oxygen-vacancy center and then moves through the lattice via polaron movement. This model accounts for the isotropy of the activation energy and also the anisotropy of the conductivity. In addition, the dielectric constant is calculated to be 25 assuming the proposed model.
Author: John Cameron McCulloch Publisher: ISBN: Category : Vanadium Languages : en Pages : 96
Book Description
The dc conductivity of single crystals of vanadium pentoxide was measured in the three crystallographic directions. The temperature range examined was -165°C to +25°C. The activation energy of the conduction process was isotropic and found to be .56 ev. The conductivity was anisotropic. Measurements of the Hall effect were attempted with a dc and ac apparatus, but the signal was too low to be observed. However, an upper limit of 71 cm3/coulomb for the Hall coefficient was calculated, and the upper limit computed for the mobility was .4 cm2/volt sec. A model is proposed for the conduction mechanism. It suggests that the electrical conduction is a two -step process. The electron is ionized from a V4-oxygen-vacancy center and then moves through the lattice via polaron movement. This model accounts for the isotropy of the activation energy and also the anisotropy of the conductivity. In addition, the dielectric constant is calculated to be 25 assuming the proposed model.
Author: Wing Andy Li Publisher: Open Dissertation Press ISBN: 9781374735170 Category : Languages : en Pages :
Book Description
This dissertation, "The Electrical Properties of Vanadium Oxide Films" by Wing, Andy, Li, 李榮, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3120506 Subjects: Sputtering (Physics) Vanadium oxide Amorphous substances
Author: T. Allersma Publisher: ISBN: Category : Languages : en Pages : 30
Book Description
The electrical resistivity of near-stoichiometric crystalline V2O5 was measured as a function of crystal orientation and oxygen partial pressure from 25C to 300C. Conductivity is insensitive to ambient atmosphere. The activation energy for conduction is 0.20 ev. Molten V2O5, however, is sensitive to oxygen partial pressure. Its conductivity is proportional to P-O2 to the -1/6th power. Anomalously high electrical resistivity was observed for glassy V2O5 films. (Author).
Author: Bhanu Priya Publisher: Mohammed Abdul Sattar ISBN: Category : Technology & Engineering Languages : en Pages : 0
Book Description
Semiconducting materials have been around since the early 19th century, when Michael Faraday discovered that, unlike pure metals, the electrical resistance in silver sulphide decreased as the temperature of the material was raised. From a more practical perspective, a semiconductor is a substance with electrical conductivity between that of an insulator and a metal, as the name suggests. There is a plethora of non- conducting features of semiconductors that have led to their uses in a wide variety of applications. After the development of the transistor device, silicon (Si) has become the most well-known semiconductor in the world. Without a doubt, the advent of the transistor in the 20th century was the single most important scientific event of the last two centuries, paving the way for the rapid development of technology in our modern world. In the last few decades, Transition Metal Oxide Semiconductors (TMOS) are a class of materials that have attracted significant attention in the field of electronics and optoelectronics due to their unique properties. These materials are composed of transition metal cations and oxygen anions, and can exhibit a wide range of electronic and optical behaviors, including band gap tuning, carrier density modulation, and photoresponse enhancement. TMOS are especially promising for applications such as solar cells, gas sensors, and electronic devices, due to their high carrier mobility, chemical stability, and abundance of raw materials. The diverse range of properties exhibited by TMOS makes them a promising avenue for developing new and advanced technologies in the field of materials science.
Author: T. N. Kennedy Publisher: ISBN: Category : Languages : en Pages : 19
Book Description
A special technique was developed for the preparation of single crystals of vanadium pentoxide having dimensions of 5 cm x 5 cm x 0.5 cm. Glassy films of V2O5 were also prepared by vapor deposition. The expansion coefficient, density and electrical resistivity of these phases were measured. (Author).
Author: Vu Huynh Lam Publisher: ISBN: Category : Languages : en Pages : 58
Book Description
To further reduce the resistivity of the VO[subscript x] and maintain the TCR value, co-sputtering of noble metals (gold and platinum) with VO[subscript x] was studied. The metals were co-sputtered at various power settings with the vanadium oxide reactive process at a fixed percentage of oxygen. The TCR and resistivity results showed that the additions of Au and Pt into VO[subscript x] reduced the resistivity. However, only Au was found to improve TCR value.
Author: John Cameron McCulloch
Author: John Cameron McCulloch
Author: Wing Andy Li
Author: Wing Li (Andy)
Author: T. Allersma
Author: Bhanu Priya
Author: Ruey Jang Yu
Author: D.L. Grigsby
Author: Francis Jenkins
Author: T. N. Kennedy
Author: Vu Huynh Lam