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Author: Robert Anholt Publisher: Artech House Microwave Library ISBN: Category : Science Languages : en Pages : 338
Book Description
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Author: Robert Anholt Publisher: Artech House Microwave Library ISBN: Category : Science Languages : en Pages : 338
Book Description
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Author: Moumita Bhoumik Publisher: GRIN Verlag ISBN: 365653442X Category : Technology & Engineering Languages : en Pages : 88
Book Description
Master's Thesis from the year 2012 in the subject Electrotechnology, grade: 9.36, West Bengal University of Technology, course: M.TECH IN ADVANCE COMMUNICATION, language: English, abstract: Advanced developments that were made recently in the field of Silicon (Si) semiconductor technology have allowed it to approach the theoretical limits of the Si material. However there are latest power device requirements for many applications that cannot be handled by the present Si-based power devices. These requirements include such as higher blocking voltages, switching frequencies, efficiency, and reliability. And hence, new semiconductor materials for power device applications are needed to overcome these limitations. For high power requirements, wide bandgap semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN) and Gallium Arsenide (GaAs), which are having superior electrical properties, are likely to replace Si in the near future. This Study thesis compares the electrical characteristics of wide-bandgap semiconductors with respect to Silicon (Si) to verify their superior utility for power applications and predicts the future of power device semiconductor materials. This thesis also includes the study that has been performed regarding the electrical characteristics of high frequency semiconductor devices in terms of I-V characteristics and Noise Power Spectral Density (PSD) Analysis with respect to drain current fluctuation in the semiconductor devices. The semiconductor devices that are used for this particular thesis are – Metal Effect Semiconductor Field Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs).
Author: Peter H. Ladbrooke Publisher: Artech House ISBN: 1630818690 Category : Technology & Engineering Languages : en Pages : 480
Book Description
Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.
Author: Peter Aaen Publisher: Cambridge University Press ISBN: 113946812X Category : Technology & Engineering Languages : en Pages : 375
Book Description
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Author: H. Groll Publisher: Springer Science & Business Media ISBN: 9401155402 Category : Technology & Engineering Languages : en Pages : 462
Book Description
Microwave Physics and Techniques discusses the modelling and application of nonlinear microwave circuits and the problems of microwave electrodynamics and applications of magnetic and high Tc superconductor structures. Aspects of advanced methods for the structural investigation of materials and of MW remote sensing are also considered. The dual focus on both HTSC MW device physics and MW excitation in ferrites and magnetic films will foster the interaction of specialists in these different fields.
Author: Kompa, Günter Publisher: kassel university press GmbH ISBN: 3862195414 Category : Compound semiconductors Languages : en Pages : 762
Book Description
Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
Author: Inder Bahl Publisher: John Wiley & Sons ISBN: 9780470462317 Category : Technology & Engineering Languages : en Pages : 696
Book Description
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Author: Stephen A. Maas Publisher: Artech House ISBN: 9781580536110 Category : Technology & Engineering Languages : en Pages : 610
Book Description
This newly and thoroughly revised edition of the 1988 Artech House classic offers you a comprehensive, up-to-date treatment of nonlinear microwave and RF circuits. It gives you a current, in-depth understanding of the theory of nonlinear circuit analysis with a focus on Volterra-series and harmonic-balance methods. You get practical guidance in designing nonlinear circuits and modeling solid-state devices for nonlinear circuit analysis by computer. Moreover, you learn how characteristics of such models affect the analysis of these circuits. Critical new topics include microwave heterojunction bipolar transistors (HBTs), heterojunction FETs (HEMTs), silicon MOSFETs, modern IC design approaches, new methods of harmonic-balance analysis, multitone analysis methods, Fourier methods for multitone problems, and artificial frequency mapping. What's more, the second edition has been updated to include discussions on nonlinear analysis of oscillators and design issues relating to RF and wireless technology. More than 120 illustrations support key topics throughout the book.
Author: Robert Anholt
Author: Robert Anholt
Author: Moumita Bhoumik
Author: Peter H. Ladbrooke
Author: Endalkachew Shewarega Mengistu
Author: Peter Aaen
Author: K. N. Bhat
Author: H. Groll
Author: Kompa, Günter
Author: Inder Bahl
Author: Stephen A. Maas