Author: Jaeshin Cho
Publisher:
ISBN:
Category :
Languages : en
Pages : 444
Book Description
Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects
Effect of Microstructure of Aluminum Alloys on the Electromigration-limited Reliability of VLSI Interconnects
The Microstructural Mechanism of Electromigration Failure in Narrow Interconnects of A1 Alloys
Stress-induced Phenomena in Metallization
Author: Paul Totta
Publisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 328
Book Description
The aim of this text of stress-induced phenomena in metallization is to assess the current understanding of the problems, to discuss the implications for the reliability of future devices, and to identify needs and directions for future research.
Publisher: American Institute of Physics
ISBN:
Category : Science
Languages : en
Pages : 328
Book Description
The aim of this text of stress-induced phenomena in metallization is to assess the current understanding of the problems, to discuss the implications for the reliability of future devices, and to identify needs and directions for future research.
Materials Reliability in Microelectronics V: Volume 391
Author: Anthony S. Oates
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
Publisher:
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 552
Book Description
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
Metals Abstracts
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 768
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 768
Book Description
RLE Progress Report
Author: Massachusetts Institute of Technology. Research Laboratory of Electronics
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 448
Book Description
Publisher:
ISBN:
Category : Electronics
Languages : en
Pages : 448
Book Description
Alloys Index
Fundamentals of Electromigration-Aware Integrated Circuit Design
Author: Jens Lienig
Publisher: Springer
ISBN: 3319735586
Category : Technology & Engineering
Languages : en
Pages : 171
Book Description
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Publisher: Springer
ISBN: 3319735586
Category : Technology & Engineering
Languages : en
Pages : 171
Book Description
The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.