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Author: A. S. Sidorkin Publisher: Cambridge Int Science Publishing ISBN: 1904602142 Category : Mathematics Languages : en Pages : 247
Book Description
The book examines domain structuring due to the loss of the initial phase stability in materials of finite size. It also covers aspects such as the behaviour of domain boundaries during their interaction with lattice defects, their structure in real ferroelectrically ordered materials, the effect of the lattice potential relief on their movement, and the flexural and translational components of their dynamics in ferroelectric crystals. The contribution of the domain boundaries to the dielectric properties of ferroelectrics and elastic properties of ferroelectric elastomers is evaluated.
Author: A. S. Sidorkin Publisher: Cambridge Int Science Publishing ISBN: 1904602142 Category : Mathematics Languages : en Pages : 247
Book Description
The book examines domain structuring due to the loss of the initial phase stability in materials of finite size. It also covers aspects such as the behaviour of domain boundaries during their interaction with lattice defects, their structure in real ferroelectrically ordered materials, the effect of the lattice potential relief on their movement, and the flexural and translational components of their dynamics in ferroelectric crystals. The contribution of the domain boundaries to the dielectric properties of ferroelectrics and elastic properties of ferroelectric elastomers is evaluated.
Author: Jill Guyonnet Publisher: Springer Science & Business Media ISBN: 3319057502 Category : Science Languages : en Pages : 167
Book Description
Using the nano metric resolution of atomic force microscopy techniques, this work explores the rich fundamental physics and novel functionalities of domain walls in ferroelectric materials, the nano scale interfaces separating regions of differently oriented spontaneous polarization. Due to the local symmetry-breaking caused by the change in polarization, domain walls are found to possess an unexpected lateral piezoelectric response, even when this is symmetry-forbidden in the parent material. This has interesting potential applications in electromechanical devices based on ferroelectric domain patterning. Moreover, electrical conduction is shown to arise at domain walls in otherwise insulating lead zirconate titanate, the first such observation outside of multiferroic bismuth ferrite, due to the tendency of the walls to localize defects. The role of defects is then explored in the theoretical framework of disordered elastic interfaces possessing a characteristic roughness scaling and complex dynamic response. It is shown that the heterogeneous disorder landscape in ferroelectric thin films leads to a breakdown of the usual self-affine roughness, possibly related to strong pinning at individual defects. Finally, the roles of varying environmental conditions and defect densities in domain switching are explored and shown to be adequately modelled as a competition between screening effects and pinning.
Author: Carlos Paz de Araujo Publisher: Taylor & Francis ISBN: 9782884491891 Category : Technology & Engineering Languages : en Pages : 596
Book Description
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
Author: Robert L. Stamps Publisher: Academic Press ISBN: 0081029217 Category : Technology & Engineering Languages : en Pages : 304
Book Description
Recent Advances in Topological Ferroics and Their Dynamics, Volume 70 in the Solid State Physics series, provides the latest information on the branch of physics that is primarily devoted to the study of matter in its solid phase, especially at the atomic level. This prestigious serial presents timely and state-of-the-art reviews pertaining to all aspects of solid state physics. - Contains contributions from leading authorities in the study of solid state physics, especially at the atomic level - Informs and updates on all the latest developments in the field - Presents timely, state-of-the-art reviews pertaining to all aspects of solid state physics
Author: Alexander Tagantsev Publisher: Springer Science & Business Media ISBN: 1441914226 Category : Science Languages : en Pages : 828
Book Description
At present, the marketplace for professionals, researchers, and graduate students in solid-state physics and materials science lacks a book that presents a comprehensive discussion of ferroelectrics and related materials in a form that is suitable for experimentalists and engineers. This book proposes to present a wide coverage of domain-related issues concerning these materials. This coverage includes selected theoretical topics (which are covered in the existing literature) in addition to a plethora of experimental data which occupies over half of the book. The book presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observations of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. "Domains in Ferroic Crystals and Thin Films" covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In other textbooks on solid state physics, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In contrast, "Domains in Ferroic Crystals and Thin Films" concentrates on domain-related phenomena in nonmagnetic ferroics. These materials are still inadequately represented in solid state physics textbooks and monographs.
Author: Jan Seidel Publisher: Springer ISBN: 3319253018 Category : Science Languages : en Pages : 249
Book Description
This book provides a state-of-the art overview of a highly interesting emerging research field in solid state physics/nanomaterials science, topological structures in ferroic materials. Topological structures in ferroic materials have received strongly increasing attention in the last few years. Such structures include domain walls, skyrmions and vortices, which can form in ferroelectric, magnetic, ferroelastic or multiferroic materials. These topological structures can have completely different properties from the bulk material they form in. They also can be controlled by external fields (electrical, magnetic, strain) or currents, which makes them interesting from a fundamental research point of view as well as for potential novel nanomaterials applications. To provide a comprehensive overview, international leading researches in these fields contributed review-like chapters about their own work and the work of other researchers to provide a current view of this highly interesting topic.
Author: Dennis Meier Publisher: Oxford University Press ISBN: 0192607413 Category : Science Languages : en Pages : 288
Book Description
Technological evolution and revolution are both driven by the discovery of new functionalities, new materials and the design of yet smaller, faster, and more energy-efficient components. Progress is being made at a breathtaking pace, stimulated by the rapidly growing demand for more powerful and readily available information technology. High-speed internet and data-streaming, home automation, tablets and smartphones are now "necessities" for our everyday lives. Consumer expectations for progressively more data storage and exchange appear to be insatiable. Oxide electronics is a promising and relatively new field that has the potential to trigger major advances in information technology. Oxide interfaces are particularly intriguing. Here, low local symmetry combined with an increased susceptibility to external fields leads to unusual physical properties distinct from those of the homogeneous bulk. In this context, ferroic domain walls have attracted recent attention as a completely new type of oxide interface. In addition to their functional properties, such walls are spatially mobile and can be created, moved, and erased on demand. This unique degree of flexibility enables domain walls to take an active role in future devices and hold a great potential as multifunctional 2D systems for nanoelectronics. With domain walls as reconfigurable electronic 2D components, a new generation of adaptive nano-technology and flexible circuitry becomes possible, that can be altered and upgraded throughout the lifetime of the device. Thus, what started out as fundamental research, at the limit of accessibility, is finally maturing into a promising concept for next-generation technology.
Author: I.S. Zheludev Publisher: Springer Science & Business Media ISBN: 1468480766 Category : Science Languages : en Pages : 362
Book Description
Research in solid-state physics in general and in the physics of dielectrics in particular has grown rapidly in scope and quan tity in the last twenty-five years. In the fifties and early sixties, there was an upsurge of interest in ferroelectricity, piezoelectrici ty' and pyroelectricity. The classical physics of dielectrics, rep resented by books of H. Frohlich, C.P. Smyth, G.I. Skanavi, and A. von Hippel, is now unthinkable without ferroelectricity. The structure and properties of ferroelectrics have been described in a number of books and reviews, including those of W. Kanzig, H.D. Megaw, F. Jona and G. Shirane, W.J. Merz and E. Fatuzzo. The present work deals with the physics of crystalline di electrics and is based on the investigations carried out by scien tists throughout the world. But, understandably, the emphasis is on the research done in the USSR, particularly in the author's labo ratory. A special feature of this two-volume treatise is the pro minent place given to the symmetry and structure of dielectrics and to the importance of spontaneous electric polarization in many properties of crystals. In fact, these aspects take up the whole of the first volume. The second volume is concerned mainly with various properties and phenomena whose nature is illustrated by considering specific crystals. Thus, for example, the phenomena of polarization, piezoelectricity, electrostriction, etc., are first discussed in detail. Then follow descriptions of these phenomena in specific compounds.
Author: A. S. Sidorkin
Author: A. S. Sidorkin
Author: Yoshihiro Ishibashi
Author: Jill Guyonnet
Author: Carlos Paz de Araujo
Author: Robert L. Stamps
Author: Alexander Tagantsev
Author: Severin Amelinckx
Author: Jan Seidel
Author: Dennis Meier
Author: I.S. Zheludev