Development of Silicon Carbide Thin Films for Optoelectronic Device Applications PDF Download

Author: Rong Ji
Publisher:
ISBN:
Category :
Languages : en
Pages : 90

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Book Description

Author: Wolfgang J. Choyke
Publisher: Springer Science & Business Media
ISBN: 3642188702
Category : Technology & Engineering
Languages : en
Pages : 911

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Book Description
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.

Author: Mariana Amorim Fraga
Publisher:
ISBN: 9789533079684
Category :
Languages : en
Pages :

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Author: Kasturi Chopra
Publisher: Springer Science & Business Media
ISBN: 1461336821
Category : Science
Languages : en
Pages : 305

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Book Description
Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver sion, and protection and passivating layers. Indeed, one would be hard pressed to find many sophisticated modern optical and electronic devices which do not use thin films in one way or the other. With the impetus provided by industrial applications, the science and technology of thin films have undergone revolutionary development and even today continue to be recognized globally as frontier areas of RID work. Major technical developments in any field of science and technology are invariably accompanied by an explosion of published literature in the form of scientific publications, reviews, and books.

Author: Mariana Amorim Fraga
Publisher:
ISBN: 9781613247747
Category : Amorphous semiconductors
Languages : en
Pages : 0

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Book Description
Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.

Author: Yasuto Hijikata
Publisher: BoD – Books on Demand
ISBN: 9535109170
Category : Science
Languages : en
Pages : 416

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Book Description
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.

Author: Joseph J. Comer
Publisher:
ISBN:
Category : Epitaxy
Languages : en
Pages : 30

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Book Description
Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).

Author: Juraj Marek
Publisher: Trans Tech Publications Ltd
ISBN: 3036413251
Category : Science
Languages : en
Pages : 116

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Book Description
Special topic volume with invited peer-reviewed papers only

Author: Francesco Cino Matacotta
Publisher: World Scientific
ISBN: 9814500747
Category : Technology & Engineering
Languages : en
Pages : 369

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Book Description
This book brings together detailed discussions by leading experts on the various innovative aspects of thin films growth, deposition and characterization techniques, and new thin film materials and devices. It addresses through the different viewpoints of the contributors, the major problem of thin films science - the relation between the energy of the condensing species and the resulting properties of the films. Some of the issues considered include energetic condensation, bombardment stabilization, pulsed electron beam ablation, orientation and self-organization of organic, ferroelectric and nanoparticle thin films. Several chapters focus on applications such as the recent developments in organic optoelectronics, large area electronic technology and superconducting thin film devices.

Author: Vijay Narayanan
Publisher: World Scientific
ISBN: 9814740497
Category : Technology & Engineering
Languages : en
Pages : 550

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Book Description
This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted.