Author: Ho-Young ChaPublisher:
ISBN:
Category :
Languages : en
Pages : 360
Book Description
Development of Silicon Carbide Metal-semiconductor Field-effect Transistors for Microwave Power Applications
Author: Ho-Young ChaHandbook of RF and Microwave Power Amplifiers
Author: John L. B. WalkerPublisher: Cambridge University Press
ISBN: 0521760100
Category : Technology & Engineering
Languages : en
Pages : 705
Book Description
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Materials for High-Temperature Semiconductor Devices
Author: Committee on Materials for High-Temperature Semiconductor DevicesPublisher: National Academies Press
ISBN: 030959653X
Category : Technology & Engineering
Languages : en
Pages : 136
Book Description
Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
Microwave Field-effect Transistors
Author: Raymond Sydney PengellyPublisher: Wiley-Blackwell
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 668
Book Description
Physics and Technology of Silicon Carbide Devices
Author: Yasuto HijikataPublisher: BoD – Books on Demand
ISBN: 9535109170
Category : Science
Languages : en
Pages : 416
Book Description
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Springer Handbook of Crystal Growth
Author: Govindhan DhanarajPublisher: Springer Science & Business Media
ISBN: 3540747613
Category : Science
Languages : en
Pages : 1823
Book Description
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Microwave Field-effect Transistors
Author: Raymond S. PengellyPublisher: John Wiley & Sons
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 496
Book Description
Simulation of SiC MESFET Using Synopsys Technology Computer-aided Design
Author: Siddharth NirmalScientific and Technical Aerospace Reports
Author: Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 456
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Silicon Carbide Based Metal Semiconductor Field Effect Transistor Variable-capacitance Model for Realizing Monolithic Microwave Integrated Circuit Voltage-controlled Function
Author: Sitarama Raju GottumukkalaPublisher:
ISBN:
Category : Metal semiconductor field-effect transistors
Languages : en
Pages : 41
Book Description
This project presents a development of variance capacitance model for a silicon carbide metal semiconductor field effect transistor (MESFET), three-terminal varactor, applied to a monolithic microwave integrated circuit (MMIC), voltage-controlled oscillator. In this model, because the source is connected with the drain, the gate capacitance is only considered by analytical expressions, which are classified into three different regions for gate bias voltage: a before pinch-off region, an after-pinch-off region, and a transition region. The model includes consideration for free carrier movement in the active region, which is a critical contributor to the gate capacitance.