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Author: Muhammad Monzur Morshed Publisher: ISBN: 9781321551297 Category : Optoelectronic devices Languages : en Pages : 118
Book Description
Mgx Zn1-x O thin film was developed to realize optoelectronic devices in the ultraviolet region. The alloy was grown without any phase separation and characterized with different methods, such as, photoluminescence, absorption, x-ray diffraction etc. to confirm the structural properties. P-type doping of Mg x Zn1-x O thin film was investigated. Antimony (Sb) and nitrogen (N) were used as the p-type dopant. It was found that incorporation of Sb degrades the optical quality of the film. On the other hand, N-doped p-type Mgx Zn1-x O thin film was demonstrated without any degradation of the optical quality. Temperature dependent photoluminescence of nitrogen doped p-type Mgx Zn1-x O nano crystalline thin films grown on c -plane sapphire substrate by rf plasma assisted molecular beam epitaxy were examined. P-type behavior was confirmed by both Hall effect and Seebeck measurements. However, structural defect related bound excitonic emission peak was distinguished in the low temperature photoluminescence spectra. Also, typical 'S shape' behavior of energy position versus temperature is observed due to polarization induced internal field. Nitrogen related acceptor ionization energy was calculated to be ~180-200meV.
Author: Muhammad Monzur Morshed Publisher: ISBN: 9781321551297 Category : Optoelectronic devices Languages : en Pages : 118
Book Description
Mgx Zn1-x O thin film was developed to realize optoelectronic devices in the ultraviolet region. The alloy was grown without any phase separation and characterized with different methods, such as, photoluminescence, absorption, x-ray diffraction etc. to confirm the structural properties. P-type doping of Mg x Zn1-x O thin film was investigated. Antimony (Sb) and nitrogen (N) were used as the p-type dopant. It was found that incorporation of Sb degrades the optical quality of the film. On the other hand, N-doped p-type Mgx Zn1-x O thin film was demonstrated without any degradation of the optical quality. Temperature dependent photoluminescence of nitrogen doped p-type Mgx Zn1-x O nano crystalline thin films grown on c -plane sapphire substrate by rf plasma assisted molecular beam epitaxy were examined. P-type behavior was confirmed by both Hall effect and Seebeck measurements. However, structural defect related bound excitonic emission peak was distinguished in the low temperature photoluminescence spectra. Also, typical 'S shape' behavior of energy position versus temperature is observed due to polarization induced internal field. Nitrogen related acceptor ionization energy was calculated to be ~180-200meV.
Author: Satishchandra B. Ogale Publisher: Springer Science & Business Media ISBN: 9780387258027 Category : Technology & Engineering Languages : en Pages : 440
Book Description
Oxides form a broad subject area of research and technology development which encompasses different disciplines such as materials science, solid state chemistry, physics etc. The aim of this book is to demonstrate the interplay of these fields and to provide an introduction to the techniques and methodologies involving film growth, characterization and device processing. The literature in this field is thus fairly scattered in different research journals covering one or the other aspect of the specific activity. This situation calls for a book that will consolidate this information and thus enable a beginner as well as an expert to get an overall perspective of the field, its foundations, and its projected progress.
Author: Saurabh Nagar Publisher: Springer ISBN: 9811008094 Category : Technology & Engineering Languages : en Pages : 101
Book Description
This monograph describes the different implantation mechanisms which can be used to achieve strong, reliable and stable p-type ZnO thin films. The results will prove useful in the field of optoelectronics in the UV region. This book will prove useful to research scholars and professionals working on doping and implantation of ZnO thin films and subsequently fabricating optoelectronic devices. The first chapter of the monograph emphasises the importance of ZnO in the field of optoelectronics for ultraviolet (UV) region and also discusses the material, electronic and optical properties of ZnO. The book then goes on to discuss the optimization of pulsed laser deposited (PLD) ZnO thin films in order to make successful p-type films. This can enable achievement of high optical output required for high-efficiency devices. The book also discusses a hydrogen implantation study on the optimized films to confirm whether the implantation leads to improvement in the optimized results.
Author: O. Auciello Publisher: Springer Science & Business Media ISBN: 9401117276 Category : Technology & Engineering Languages : en Pages : 625
Book Description
The synthesis of multicomponent/multilayered superconducting, conducting, semiconducting and insulating thin films has become the subject of an intensive, worldwide, interdisciplinary research effort. The development of deposition-characterization techniques and the science and technology related to the synthesis of these films are critical for the successful evolution of this interdisciplinary field of research and the implementation of the new materials in a whole new generation of advanced microdevices. This book contains the lectures and contributed papers on various scientific and technological aspects of multicomponent and multilayered thin films presented at a NATO/ASI. Compared to other recent books on thin films, the distinctive character of this book is the interdisciplinary treatment of the various fields of research related to the different thin film materials mentioned above. The wide range of topics discussed in this book include vacuum-deposition techniques, synthesis-processing, characterization, and devices of multicomponent/multilayered oxide high temperature superconducting, ferroelectric, electro-optic, optical, metallic, silicide, and compound semiconductor thin films. The book presents an unusual intedisciplinary exchange of ideas between researchers with cross-disciplinary backgrounds and it will be useful to established investigators as well as postdoctoral and graduate students.
Author: Alberto Palmero Publisher: MDPI ISBN: 3039364294 Category : Science Languages : en Pages : 148
Book Description
Recent years have witnessed the flourishing of numerous novel strategies based on the magnetron sputtering technique aimed at the advanced engineering of thin films, such as HiPIMS, combined vacuum processes, the implementation of complex precursor gases or the inclusion of particle guns in the reactor, among others. At the forefront of these approaches, investigations focused on nanostructured coatings appear today as one of the priorities in many scientific and technological communities: The science behind them appears in most of the cases as a "terra incognita", fascinating both the fundamentalist, who imagines new concepts, and the experimenter, who is able to create and study new films with as of yet unprecedented performances. These scientific and technological challenges, along with the existence of numerous scientific issues that have yet to be clarified in classical magnetron sputtering depositions (e.g., process control and stability, nanostructuration mechanisms, connection between film morphology and properties or upscaling procedures from the laboratory to industrial scales) have motivated us to edit a specialized volume containing the state-of-the art that put together these innovative fundamental and applied research topics. These include, but are not limited to: • Nanostructure-related properties; • Atomistic processes during film growth; • Process control, process stability, and in situ diagnostics; • Fundamentals and applications of HiPIMS; • Thin film nanostructuration phenomena; • Tribological, anticorrosion, and mechanical properties; • Combined procedures based on the magnetron sputtering technique; • Industrial applications; • Devices.
Author: Dong-Sing Wuu Publisher: MDPI ISBN: 3039288377 Category : Science Languages : en Pages : 160
Book Description
This Special Issue on Functional Oxide-Based Thin-Film Materials touches on the latest advancements in several aspects related to material science: the synthesis of novel oxide, photoluminescence characteristics, photocatalytic ability, energy storage, light emitter studies, low-emissivity glass coatings, and investigations of both nanostructure and thin-film properties. It represents an amalgamation of specialists working with device applications and shedding light on the properties and behavior of thin-film oxides (e.g., GaOx, Ga2O3, HfO2, LiNbO3, and doped ZnO, among numerous others). The papers cover many aspects of thin-film science and technology, from thin film to nanostructure and from material properties to optoelectronic applications, thus reflecting the many interests of the community of scientists active in the field.
Author: Publisher: Academic Press ISBN: 0080542905 Category : Technology & Engineering Languages : en Pages : 331
Book Description
Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.
Author: Amrah Canul Publisher: ISBN: 9781339321684 Category : Zinc oxide thin films Languages : en Pages : 86
Book Description
This work investigates the temperature dependence of electron states at the band-edge in ZnO and Mg0.0--Zn0.93O thin films. To investigate the band-edge dynamics, we study in-gap states via temperature dependent absorption spectroscopy in the range 77-527K. The in-gap states at the band-edge were analyzed via the Urbach energy model, where the Urbach Energy is a measure of the extent of states into the bandgap. In parallel, we also analyze the temperature dependent Urbach energy via the Wasim model, which separates the relative contributions of defect states and temperature dependent phonon modes to the in-gap states. It was found that the defect contribution to in-gap states at the band-edge was significantly higher for Mg0.0--Zn0.93O than in ZnO. Additionally, the phonon contribution to in-gap states was less in Mg0.0--Zn0.93O than in ZnO. The author gratefully acknowledges the National Science Foundation and the U.S. Department of Energy, Office of Basic Energy Science, Division of Materials Science and Engineering under Grant No. DE-FG02-07ER46386.
Author: Publisher: ISBN: Category : Languages : en Pages :
Book Description
This project on study of p-type ZnO and MgZnO thin films for solid state lighting was carried out by research group of Prof. Jianlin Liu of UCR during the four-year period between August 2011 and July 2015. Tremendous progress has been made on the proposed research. This final report summarizes the important findings.
Author: Muhammad Monzur Morshed
Author: Muhammad Monzur Morshed
Author: Satishchandra B. Ogale
Author: Saurabh Nagar
Author: O. Auciello
Author: Alberto Palmero 
Author: Rong Ji
Author: Dong-Sing Wuu
Author: 
Author: Amrah Canul
Author: