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Development of Charge Transfer Devices for 1-2 Micron Imaging

Development of Charge Transfer Devices for 1-2 Micron Imaging PDF Author: Ira Deyhimy
Publisher:
ISBN:
Category :
Languages : en
Pages : 38

Book Description
There is considerable interest in the development of an imaging system within the wavelength range of 1.0 - 1.8 micrometers. The concept of charge coupled devices emerges as one of the viable candidates for such an application. The advantages of a non-MIS, Schottky barrier, buried channel CCD are discussed. A suitable material system for the 1.0 - 1.8 micrometers CCd application is the n-GaA1Sb/p+-GaSb hetero-system. Substantially improved surface morphology for this system is reported. This is achieved by the addition of As to the GaA1Sb layer, thus forming the quaternary: GaA1AsSb. Characterization of Schottky barriers to this material are reported. the Schottky barrier height is found to be>0.7 eV. (Author).

Development of Charge Transfer Devices for 1-2 Micron Imaging

Development of Charge Transfer Devices for 1-2 Micron Imaging PDF Author: Ira Deyhimy
Publisher:
ISBN:
Category :
Languages : en
Pages : 38

Book Description
There is considerable interest in the development of an imaging system within the wavelength range of 1.0 - 1.8 micrometers. The concept of charge coupled devices emerges as one of the viable candidates for such an application. The advantages of a non-MIS, Schottky barrier, buried channel CCD are discussed. A suitable material system for the 1.0 - 1.8 micrometers CCd application is the n-GaA1Sb/p+-GaSb hetero-system. Substantially improved surface morphology for this system is reported. This is achieved by the addition of As to the GaA1Sb layer, thus forming the quaternary: GaA1AsSb. Characterization of Schottky barriers to this material are reported. the Schottky barrier height is found to be>0.7 eV. (Author).

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