New Topologies and Modulation Schemes for Soft-Switching Isolated DC–DC Converters PDF Download

Author: Zhiqiang Guo
Publisher: Springer Nature
ISBN: 9813299347
Category : Technology & Engineering
Languages : en
Pages : 261

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Book Description
This book presents a series of new topologies and modulation schemes for soft-switching in isolated DC–DC converters. Providing detailed analyses and design procedures for converters used in a broad range of applications, it offers a wealth of engineering insights for researchers and students in the field of power electronics, as well as stimulating new ideas for future research.

Author: Salvatore Musumeci
Publisher: MDPI
ISBN: 303650446X
Category : Technology & Engineering
Languages : en
Pages : 188

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Book Description
Nowadays, power electronics is an enabling technology in the energy development scenario. Furthermore, power electronics is strictly linked with several fields of technological growth, such as consumer electronics, IT and communications, electrical networks, utilities, industrial drives and robotics, and transportation and automotive sectors. Moreover, the widespread use of power electronics enables cost savings and minimization of losses in several technology applications required for sustainable economic growth. The topologies of DC–DC power converters and switching converters are under continuous development and deserve special attention to highlight the advantages and disadvantages for use increasingly oriented towards green and sustainable development. DC–DC converter topologies are developed in consideration of higher efficiency, reliable control switching strategies, and fault-tolerant configurations. Several types of switching converter topologies are involved in isolated DC–DC converter and nonisolated DC–DC converter solutions operating in hard-switching and soft-switching conditions. Switching converters have applications in a broad range of areas in both low and high power densities. The articles presented in the Special Issue titled "Advanced DC-DC Power Converters and Switching Converters" consolidate the work on the investigation of the switching converter topology considering the technological advances offered by innovative wide-bandgap devices and performance optimization methods in control strategies used.

Author: Deshang Sha
Publisher: Springer
ISBN: 9811302596
Category : Technology & Engineering
Languages : en
Pages : 326

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Book Description
Written by experts, this book is based on recent research findings in high-frequency isolated bidirectional DC-DC converters with wide voltage range. It presents advanced power control methods and new isolated bidirectional DC-DC topologies to improve the performance of isolated bidirectional converters. Providing valuable insights, advanced methods and practical design guides on the DC-DC conversion that can be considered in applications such as microgrid, bidirectional EV chargers, and solid state transformers, it is a valuable resource for researchers, scientists, and engineers in the field of isolated bidirectional DC-DC converters.

Author: Jian Li
Publisher: Springer Nature
ISBN: 981990451X
Category : Technology & Engineering
Languages : en
Pages : 1411

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Book Description
This book gathers outstanding papers presented at the 17th Annual Conference of China Electrotechnical Society, organized by China Electrotechnical Society (CES), held in Beijing, China, from September 17 to 18, 2022. It covers topics such as electrical technology, power systems, electromagnetic emission technology, and electrical equipment. It introduces the innovative solutions that combine ideas from multiple disciplines. The book is very much helpful and useful for the researchers, engineers, practitioners, research students, and interested readers.

Author: Xin Zhang
Publisher: Springer Nature
ISBN: 9811991154
Category : Technology & Engineering
Languages : en
Pages : 247

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Book Description
This book is devoted to the optimum design of the DCT in a hybrid AC/DC microgrid, which takes into account not only the influence of different inductors/capacitors values, but also numerous design goals (i.e., VCG, efficiency, stability and so on). This book examines the DCT's design problem in detail. It begins by reviewing existing DCTs in, the hybrid AC/DC microgrid and their design problems. Following that, this book proposes a family of DCT optimization design approaches to ensure that the designed DCT has good power transmission and voltage regulation ability in the hybrid AC/DC microgrid, even when the actual inductors/capacitors values fluctuate with practical power and temperature. Following that, this book provides a family of multi-objective optimization design methodologies for the DCT to guarantee that it concurrently achieves the requirements of VCG, efficiency, and system stability. This book also covers how to control the DCT in a hybrid AC/DC microgrid optimally and generically.

Author: Eial Awwad, Abdullah
Publisher: Universitätsverlag der TU Berlin
ISBN: 3798330964
Category : Technology & Engineering
Languages : en
Pages : 184

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Book Description
Increasing demand for efficiency and power density pushes Si-based devices to some of their inherent material limits, including those related to temperature operation, switching frequency, and blocking voltage. Recently, SiC-based power devices are promising candidates for high-power and high-frequency switching applications. Today, SiC MOSFETs are commercially available from several manufacturers. Although technology affiliated with SiC MOSFETs is improving rapidly, many challenges remain, and some of them are investigated in this work. The research work in this dissertation is divided into the three following parts. Firstly, the static and switching characteristics of the state-of-the-art 1.2 kV planar and double-trench SiC MOSFETs from two different manufacturers are evaluated. The effects of different biasing voltages, DC link voltages, and temperatures are analysed. The characterisation results show that the devices exhibit superior switching performances under different operating conditions. Moreover, several aspects of using the SiC MOSFET’s body diode in a DC/DC converter are investigated, comparing the body-diodes of planar and double-trench devices. Reverse recovery is evaluated in switching tests considering the case temperature, switching rate, forward current, and applied voltage. Based on the measurement results, the junction temperature is estimated to guarantee safe operation. A simple electro-thermal model is proposed in order to estimate the maximum allowed switching frequency based on the thermal design of the SiC devices. Using these results, hard- and soft-switching converters are designed, and devices are characterised as being in continuous operation at a very high switching frequency of 1 MHz. Thereafter, the SiC MOSFETs are operated in a continuous mode in a 10 kW / 100-250 kHz buck converter, comparing synchronous rectification, the use of the body diode, and the use of an external Schottky diode. Further, the parallel operation of the planar devices is considered. Thus, the paralleling of SiC MOSFETs is investigated before comparing the devices in continuous converter operation. In this regard, the impact of the most common mismatch parameters on the static and dynamic current sharing of the transistors is evaluated, showing that paralleling of SiC MOSFETs is feasible. Subsequently, an analytical model of SiC MOSFETs for switching loss optimisation is proposed. The analytical model exhibits relatively close agreement with measurement results under different test conditions. The proposed model tracks the oscillation effectively during both turn-on and –off transitions. This has been achieved by considering the influence of the most crucial parasitic elements in both power and gate loops. In the second part, a comprehensive short-circuit ruggedness evaluation focusing on different failure modes of the planar and double-trench SiC devices is presented. The effects of different biasing voltages, DC link voltages, and gate resistances are evaluated. Additionally, the temperature-dependence of the short-circuit capability is evaluated, and the associated failure modes are analysed. Subsequently, the design and test of two different methods for overcurrent protection are proposed. The desaturation technique is applied to the SiC MOSFETs and compared to a second method that depends on the stray inductance of the devices. Finally, the benefits of using SiC devices in continuous high-frequency, high-power DC/DC converters is experimentally evaluated. In this regard, a design optimisation of a high-frequency transformer is introduced, and the impact of different core materials, conductor designs, and winding arrangements are evaluated. A ZVZCS Phase-Shift Full-Bridge unidirectional DC/DC converter is proposed, using only the parasitic leakage inductance of the transformer. Experimental results for a 10 kW, (100-250) kHz prototype indicate an efficiency of up to 98.1% for the whole converter. Furthermore, an optimized control method is proposed to minimise the circulation current in the isolated bidirectional dual active bridge DC/DC converter, based on a modified dual-phase-shift control method. This control method is also experimentally compared with traditional single-phase shift control, yielding a significant improvement in efficiency. The experimental results confirm the theoretical analysis and show that the proposed control can enhance the overall converter efficiency and expand the ZVZCS range. Die steigende Nachfrage nach Effizienz und Leistungsdichte bringt Si-basierte eistungsbauteile an einige inhärente Materialgrenzen, die unter anderem mit der Temperaturbelastung, der Schaltfrequenz und der Blockierspannung in Zusammenhang stehen. In jüngster Zeit sind SiC-basierte Leistungsbauelemente vielversprechende Kandidaten für Hochleistungs- und Hochfrequenzanwendungen. Aktuell sind SiC-MOSFETs von mehreren Herstellern im Handel erhältlich. Obwohl sich die Technologie der SiC-MOSFETs rasch verbessert, werden viele Herausforderungen bestehen bleiben. Einige dieser Herausforderungen werden in dieser Arbeit untersucht. Die Untersuchungen in dieser Dissertation gliedern sich in die drei folgenden Teile: Im ersten Teil erfolgt, die statische und die transiente Charakterisierung der aktuellen 1,2 kV Planarund Doubletrench SiC-MOSFETs verschiedener Hersteller. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Temperaturen werden analysiert. Die Ergebnisse der Charakterisierung zeigen, dass die Bauteile überlegene Schaltleistungen unter verschiedenen Betriebsbedingungen aufweisen. Darüber hinaus wird der Einsatz der internen SiC-Bodydioden in einem DC/DC-Wandler untersucht, wobei die Unterschiede zwischen Planar- und Doppeltrench-Bauteilen aufgezeigt werden. Das Reverse-Recovery-Verhalten wird unter Berücksichtigung der Gehäusetemperatur, der Schaltgeschwindigkeit, des Durchlassstroms und der angelegten Spannung bewertet. Anhand der Messergebnisse wird die Sperrschichttemperatur geschätzt, damit ein sicherer Betrieb gewährleistet ist. Ein einfaches elektrothermisches Modell wird vorgestellt, um die maximal zulässige Schaltfrequenz auf der Grundlage des thermischen Designs der SiC-Bauteile abzuschätzen. Anhand dieser Ergebnisse werden hart- und weichschaltende Umrichter konzipiert und die Bauteile werden im Dauerbetrieb mit einer sehr hohen Schaltfrequenz von 1 MHz untersucht. Danach werden die SiC-MOSFETs im Dauerbetrieb in einem 10 kW / 100-250 kHz-Tiefsetzsteller betrieben. Dabei wird die Synchrongleichrichtung, die Verwendung der internen Diode und die Verwendung einer externen Schottky-Diode verglichen. Außerdem wird die Parallelisierung von SiC-MOSFETs untersucht, bevor die Parallelschaltung der verschiedenen Bauelemente ebenso im kontinuierlichen Konverterbetrieb verglichen wird. Es wird der Einfluss der häufigsten Parametervariationen auf die statische und dynamische Stromaufteilung der Transistoren analysiert, was zeigt, dass eine Parallelisierung von SiC-MOSFETs möglich ist. Anschließend wird ein analytisches Modell der SiC-MOSFETs zur Schaltverlustoptimierung vorgeschlagen. Das analytische Modell zeigt eine relativ enge Übereinstimmung mit den Messergebnissen unter verschiedenen Testbedingungen. Das vorgeschlagene Modell bildet die Schwingungen sowohl beim Ein- als auch beim Ausschalten effektiv nach. Dies wurde durch die Berücksichtigung der wichtigsten parasitären Elemente in Strom- und Gatekreisen erreicht. Im zweiten Teil wird eine umfassende Bewertung der Kurzschlussfestigkeit mit Fokus auf verschiedene Ausfallmodi der planaren und double-trench SiC-Bauelemente vorgestellt. Die Auswirkungen unterschiedlicher Gatespannungen, Zwischenkreisspannungen und Gate-Widerstände werden ausgewertet. Zusätzlich wird die temperaturabhängige Kurzschlussfähigkeit ausgewertet und die zugehörigen Fehlerfälle werden analysiert. Anschließend wird die Auslegung und Prüfung von zwei verschiedenen Verfahren zum Überstromschutz evaluiert. Die „Desaturation“-Technik wird auf SiC-MOSFETs angewendet und mit einer zweiten Methode verglichen, welche die parasitäre Induktivität der Bauelemente nutzt. Schließlich wird der Nutzen des Einsatzes von SiC-Bauteilen in kontinuierlichen Hochfrequenz-Hochleistungs-DC/DC-Wandlern experimentell untersucht. In diesem Zusammenhang wird eine Designoptimierung eines Hochfrequenztransformators vorgestellt und der Einfluss verschiedener Kernmaterialien, Leiterausführungen und Wicklungsanordnungen wird bewertet. Es wird ein unidirektionaler ZVZCS Vollbrücken-DC/DC-Wandler vorgestellt, der nur die parasitäre Streuinduktivität des Transformators verwendet. Experimentelle Ergebnisse für einen 10 kW, (100-250) kHz Prototyp zeigen einenWirkungsgrad von bis zu 98,1% für den gesamten Umrichter. Abschließend wird ein optimiertes Regelverfahren verwendet, welches auf einem modifizierten Dual-Phase-Shift-Regelverfahren basiert, um den Kreisstrom im isolierten bidirektionalen Dual-Aktiv-Brücken-DC/DC-Wandler zu minimieren. Diese Regelmethode wird experimentell mit der herkömmlichen Single-Phase-Shift-Regelung verglichen. Hierbei zeigt sich eine deutliche Effizienzsteigerung durch die neue Regelmethode. Die experimentellen Ergebnisse bestätigen die theoretische Analyse und zeigen, dass die vorgeschlagene Regelung den Gesamtwirkungsgrad des Umrichters erhöhen und den ZVZCS-Bereich erweitern kann.

Author: Manuel Arias
Publisher: MDPI
ISBN: 3036515631
Category : Technology & Engineering
Languages : en
Pages : 402

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Book Description
In this book, 20 papers focused on different fields of power electronics are gathered. Approximately half of the papers are focused on different control issues and techniques, ranging from the computer-aided design of digital compensators to more specific approaches such as fuzzy or sliding control techniques. The rest of the papers are focused on the design of novel topologies. The fields in which these controls and topologies are applied are varied: MMCs, photovoltaic systems, supercapacitors and traction systems, LEDs, wireless power transfer, etc.

Author: Amit Kumar Singh
Publisher: Springer
ISBN: 9811082138
Category : Technology & Engineering
Languages : en
Pages : 216

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Book Description
This thesis proposes new power converter topologies suitable for aircraft systems. It also proposes both AC-DC and DC-DC types of converters for different electrical loads to improve the performance these systems. To increase fuel efficiency and reduce environmental impacts, less efficient non-electrical aircraft systems are being replaced by electrical systems. However, more electrical systems requires more electrical power to be generated in the aircraft. The increased consumption of electrical power in both civil and military aircrafts has necessitated the use of more efficient electrical power conversion technologies. This book presents acomprehensive mathematical analysis and the design and digital simulation of the power converters. Subsequently it discusses the construction of the hardware prototypes of each converter and the experimental tests carried out to verify the benefits of the proposed solutions in comparison to the existing solutions.

Author: Ali Emadi
Publisher: CRC Press
ISBN: 9780824747510
Category : Technology & Engineering
Languages : en
Pages : 520

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Book Description
Vehicular Electric Power Systems: Land, Sea, Air, and Space Vehicles acquaints professionals with trends and challenges in the development of more electric vehicles (MEVs) using detailed examples and comprehensive discussions of advanced MEV power system architectures, characteristics, and dynamics. The authors focus on real-world applications and highlight issues related to system stability as well as challenges faced during and after implementation. Probes innovations in the development of more electric vehicles for improved maintenance, support, endurance, safety, and cost-efficiency in automotive, aerospace, and marine vehicle engineering Heralding a new wave of advances in power system technology, Vehicular Electric Power Systems discusses: Different automotive power systems including conventional automobiles, more electric cars, heavy-duty vehicles, and electric and hybrid electric vehicles Electric and hybrid electric propulsion systems and control strategies Aerospace power systems including conventional and advanced aircraft, spacecraft, and the international space station Sea and undersea vehicles The modeling, real-time state estimation, and stability assessment of vehicular power systems Applications of fuel cells in various land, sea, air, and space vehicles Modeling techniques for energy storage devices including batteries, fuel cells, photovoltaic cells, and ultracapacitors Advanced power electronic converters and electric motor drives for vehicular applications Guidelines for the proper design of DC and AC distribution architectures

Author: Y. Cheron
Publisher: Springer Science & Business Media
ISBN: 9780412395109
Category : Technology & Engineering
Languages : en
Pages : 258

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Book Description
The author gives a thorough explanation of soft commutation making use of the concept of duality to explain the principles of the technique and to place it in context in the field of power electronics.