Author: John Evan JohnsonPublisher:
ISBN:
Category :
Languages : en
Pages : 202
Book Description
Design and Fabrication of Gallium Arsenide-aluminum Gallium Arsenide Two-mode Cross-coupled Bistable Laser Diodes for Optical Switching and Memory Applications
Author: John Evan JohnsonDesign and Fabrication of a Monolithic Two-mode Optical Flip-flop
Author: Bin JianPublisher:
ISBN:
Category : Electron optics
Languages : en
Pages : 260
Book Description
American Doctoral Dissertations
Author: Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 704
Book Description
Bistability and Unidirectionality in Triangular Ring Diode Lasers
Author: Michael Francis BoothPublisher:
ISBN:
Category :
Languages : en
Pages : 578
Book Description
The Fabrication of Double Heterostructure Aluminum Gallium Arsenide/gallium Arsenide Lasers by Molecular Beam Epitaxy
Author: Timothy James DrummondPublisher:
ISBN:
Category :
Languages : en
Pages : 58
Book Description
Today there exists a need to be able to process increasing amounts of data at rates beyond the capabilities of existing purely electrical networks. To meet this need, networks which transmit data via an optical carrier rather than an electrical one are being developed. A necessary component of an optical network is a small, easily modulated source of coherent light. The only such source available is a laser diode. The first laser diode to operate continuously at room temperature was a double heterostructure (DH) (Al, Ga)As/GaAs laser prepared by liquid phase epitaxy (LPE). Much effort was subsequently devoted to reproducing those results by molecular beam epitaxy (MBE). MBE offers several advantages over LPE, such as control of composition and impurity profiles to atomic dimensions. Layers cna be grown on larger substrates and with a high degree of uniformity and reproducibility that is not possible with LPE. Despite these advantages, it was six years after the first continuous room temperature operation of an (Al, Ga)As/GaAs DH laser that a similar laser prepared by MBE was reported. The first MBE lasers typically had threshold current densities, Jth, about twice as large as similarly designed LPE lasers. Another three years passed before the art of MBE advanced to the point where it became possible to achieve laser performance equal to the LPE lasers. The presence of non-radiative recombination centers in the bulk (Al, Ga)As layers was shown to make a significant contribution to the high threshold current densities in MBE lasers.
Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications
Author: Luca RedaelliPublisher: Cuvillier Verlag
ISBN: 3736945868
Category : Science
Languages : en
Pages : 176
Book Description
In this work, several aspects concerning (In,Al,Ga)N laser diodes with high spectral purity, designed for applications in spectroscopy, were studied. A complete fabrication process for ridgewaveguide laser diodes on GaN substrate was developed. The lateral size of the ridge waveguides was as narrow as 1.5 μm: this is necessary in order to achieve lateral single-mode lasing in (In,Al,Ga)N laser diodes. A peculiar property of (In,Al,Ga)N laser diodes is that, when the ridge is narrow, the threshold current strongly depends on the ridge etch depth. This phenomenon was investigated by fabricating laser diodes with different etch depths. For ridge widths below 2 μm, the threshold current of shallow-ridge devices was found to be more than two times larger than that of comparable deep-ridge devices. Moreover, in the lateral far-field patterns of shallow-ridge laser diodes, side-lobes were observed, which would support the hypothesis of strong index-antiguiding. The antiguiding factor at threshold was experimentally determined to be about 10, which is among the largest values ever published for (In,Al,Ga)N laser diodes. The devices were further studied by simulation, and the results confirmed that the carrier-induced index change in the quantum wells can compensate the lateral index step if the ridge is shallow. This, in turn, reduces the lateral optical confi nement, which increases the threshold current and generates side lobes in the far-fi eld patterns. Based on this research, blue and violet laser diodes suitable for packaging in TO cans and continuous-wave (CW) operation exceeding 50 mW were fabricated. An external cavity diode laser (ECDL) was also realized, which could be tuned over the spectral range 435 nm - 444 nm and provided a peak emission power of more than 27 mW CW at 439 nm. As an alternative approach to obtain a narrow spectral linewidth, the feasibility of monolithically integrated Bragg-gratings was studied.
Fabrication and Characterization of Gallium Arsenide/aluminum Gallium Arsenide Semiconductor Ring Laser for Realization of Miniature Gyroscope
Author: Jay Prakash GuptaPublisher: ProQuest
ISBN: 9780549926825
Category : Aluminum
Languages : en
Pages :
Book Description
There is demand for a robust, compact and sensitive gyroscope which can be utilized as a navigational tool for modern commercial and military applications, as well as there is a need of constant improvement in performance and reduction in bulk and weight of the gyroscope at the same time. A compact integrated design based on semiconductor materials has the highest hope of meeting the measurement conditions for military and commercial applications as well as providing the potential for low cost, high volume manufacturing. To this end, my work focuses on fabrication and characterization of one of the key elements of a GaAs / AlGaAs semiconductor ring laser (SRL) gyroscope, SRL. The goal of the thesis is to fabricate a SRL with characteristics required for its use in a SRL gyroscope. In this thesis, I first describe the working principle of the SRL gyroscope. The lock-in in the SRL is explained and an approach to break the lock-in is described. Then the effort put into the fabrication of SRL, problems faced and methods used to rectify them is described in detail. Afterwards, I explain the test setup built to characterize the fabricated SRLs. Finally, I quantify the results obtained by characterizing the fabricated structures and research to follow in the future.
Bistabilities and Nonlinearities in Laser Diodes
Author: Hitoshi KawaguchiPublisher: Artech House Optoelectronics L
ISBN:
Category : Mathematics
Languages : en
Pages : 404
Book Description
With outstanding tutorials and crystal-clear explanations, this book provides complete coverage of the field -- guiding you from basic physics to modern design applications for optical communications and photonic switching.
Gallium Arsenide Lasers
Author: C. H. GoochPublisher: John Wiley & Sons
ISBN:
Category : Science
Languages : en
Pages : 356
Book Description
Fabrication and Analysis of a Gallium Arsenide Laser Diode
Author: Thomas John CurryPublisher:
ISBN:
Category : Lasers
Languages : en
Pages : 150
Book Description