Degradation Mechanisms in III-V Compound Semiconductor Devices and Structures: Volume 184 PDF Download

Author: V. Swaminathan
Publisher: Mrs Proceedings
ISBN:
Category : Science
Languages : en
Pages : 304

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Book Description
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Author: Osamu Ueda
Publisher: Artech House Publishers
ISBN:
Category : Science
Languages : en
Pages : 376

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Book Description
In developing III-V optical devices for use in optical fiber communication systems, digital-audio systems, and optical printers, reliability is paramount. Understanding the origins and causes of degradation is critical to successful design. This unique book focuses specifically on helping researchers and engineers involved in III-V compound semiconductor thin film growth and processing better understand the mechanism of degradation and details the major degradation modes of optical devices fabricated from three different systems. The book explains the character of defects and imperfections induced during material growth and fabrication, presents techniques for failure analysis, and describes methods for elimination of defect-generating mechanisms. More than 200 illustrations and 40 equations help clarify important concepts.

Author: M. E. Overberg
Publisher: The Electrochemical Society
ISBN: 1566778328
Category : Science
Languages : en
Pages : 232

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Book Description
The papers included in this issue of ECS Transactions were originally presented in the symposium ¿State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.

Author:
Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 934

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Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 702

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Author: Kompa, Günter
Publisher: kassel university press GmbH
ISBN: 3862195414
Category : Compound semiconductors
Languages : en
Pages : 762

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Book Description
Trapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.

Author: Kazumi Wada
Publisher: CRC Press
ISBN: 100071599X
Category : Science
Languages : en
Pages : 426

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Book Description
Defects in Optoelectronic Materials bridges the gap between device process engineers and defect physicists by describing current problems in device processing and current understanding of these defects based on defect physics. The volume covers defects and their behaviors in epitaxial growth, in various processes such as plasma processing, deposition and implantation, and in device degradation. This book also provides graduate students cutting-edge information on devices and materials interaction.

Author: Bogdan Stefan Vasile
Publisher: MDPI
ISBN: 3039289675
Category : Technology & Engineering
Languages : en
Pages : 294

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Book Description
The book is focused on nanostructured materials, which have been well-studied in various fields from life to materials sciences. Nanostructured science has the potential to help make revolutionary discoveries based on modifying the properties of these materials compared with micro-structured materials. Nanostructured materials are the key to discovering new products based on new technologies. This book is focused on presenting new state-of-the-art methods for the synthesis and processing of nanostructured materials. These materials can be used in both in life and materials science with applications from biomedical devices, drug delivery systems, medical imaging with multiferoic materials, high-energy batteries, capacitors, superconductors, and aerospace components.

Author: A. Christou
Publisher: Springer Science & Business Media
ISBN: 9400924828
Category : Technology & Engineering
Languages : en
Pages : 571

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Book Description
This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.

Author: Chris J. Palmstrøm
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 208

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Book Description