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Author: H. C. Freyhardt Publisher: Springer Science & Business Media ISBN: 3642698662 Category : Science Languages : en Pages : 152
Book Description
Polytypic crystals of semiconductors, dielectrics and magnetic materials attract an increasing attention in science and technology. On one hand, the phenomenon of polyty pism is one of the fundamental problems of solid-state physics; its solution would make it possible to elucidate- the problem of the interconnection of different structures and intraatomic forces acting in crystals. On the other hand, the polytypic difference in crystals is most strongly expressed in electro-physical properties, which makes their application promising, mainly in semiconductor electronics. Thus, the difficulties of pro ducing modulated structures in polytypic crystals can be overcome since these crystals form a class of one-dimensional natural superlattices. At present it has become clear that polytypism in crystals and compounds is the rule rather than an exception and it is determined by the conditions of their synthesis. This phenomenon seems to be rather widespread in nature and fundamental for crystal forma tion. H polytypism was recently thought to be but a specific structural feature of a few substances such as SiC, ZnS, CdI , etc. , by now this phenomenon has been discovered in 2 v an increasing range of crystalline substances, for example, in silicon, diamond, AIIIB , VI AIIB , AIBVII compounds, in ternary semiconducting compounds, metals, silicates, perovskites, mica, organic crystals. The more accurately the structural studies are per formed, the greater is the number of crystals of various substances found to exhibit the phenomenon of polytypism. Recently, excellent surveys have systematized our knowledge of polytypism.
Author: H. C. Freyhardt Publisher: Springer Science & Business Media ISBN: 3642698662 Category : Science Languages : en Pages : 152
Book Description
Polytypic crystals of semiconductors, dielectrics and magnetic materials attract an increasing attention in science and technology. On one hand, the phenomenon of polyty pism is one of the fundamental problems of solid-state physics; its solution would make it possible to elucidate- the problem of the interconnection of different structures and intraatomic forces acting in crystals. On the other hand, the polytypic difference in crystals is most strongly expressed in electro-physical properties, which makes their application promising, mainly in semiconductor electronics. Thus, the difficulties of pro ducing modulated structures in polytypic crystals can be overcome since these crystals form a class of one-dimensional natural superlattices. At present it has become clear that polytypism in crystals and compounds is the rule rather than an exception and it is determined by the conditions of their synthesis. This phenomenon seems to be rather widespread in nature and fundamental for crystal forma tion. H polytypism was recently thought to be but a specific structural feature of a few substances such as SiC, ZnS, CdI , etc. , by now this phenomenon has been discovered in 2 v an increasing range of crystalline substances, for example, in silicon, diamond, AIIIB , VI AIIB , AIBVII compounds, in ternary semiconducting compounds, metals, silicates, perovskites, mica, organic crystals. The more accurately the structural studies are per formed, the greater is the number of crystals of various substances found to exhibit the phenomenon of polytypism. Recently, excellent surveys have systematized our knowledge of polytypism.
Author: Publisher: Elsevier ISBN: 0080914586 Category : Science Languages : en Pages : 430
Book Description
Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. - Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT - Review of the CdTe recent developments - Fundamental background of many topics clearly introduced and exposed
Author: D. B. Holt Publisher: Cambridge University Press ISBN: 1139463594 Category : Science Languages : en Pages : 625
Book Description
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author: C.A.J. Ammerlaan Publisher: Elsevier ISBN: 0080983642 Category : Technology & Engineering Languages : en Pages : 518
Book Description
This volume reviews recent developments in the materials science of silicon. The topics discussed range from the fundamental characterization of the physical properties to the assessment of materials for device applications, and include: crystal growth; process-induced defects; topography; hydrogenation of silicon; impurities; and complexes and interactions between impurities.In view of its key position within the conference scope, several papers examine process induced defects: defects due to ion implantation, silicidation and dry etching, with emphasis being placed on the device aspects. Special attention is also paid to recent developments in characterization techniques on epitaxially grown silicon, and silicon-on-insulators.
Author: Evgeni B. Budevski Publisher: John Wiley & Sons ISBN: 3527614923 Category : Science Languages : en Pages : 421
Book Description
Electrochemical processes and methods are basic to many important scientific disciplines, materials science and nanotechnology being only two keywords. For the first time in more than twenty years this volume presents a critical survey of the foundations, methodology and applications of electrochemical phase formation and growth processes. Written by a team of three internationally renowned authors, it is an invaluable source of information for all scientists concerned with electrocrystallization of metals or the in-situ characterization of electron-conducting surfaces. Not only the numerous illustrations (partly in colour) but also the vast number of references covering the literature up to and including 1995 make this volume indispensable for every laboratory working in electrochemical or materials science.
Author: Publisher: Academic Press ISBN: 0080864309 Category : Technology & Engineering Languages : en Pages : 443
Book Description
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Author: H. C. Freyhardt
Author: H. C. Freyhardt
Author: 
Author: V. V. Osiko
Author: Suryanarayanan Ganesan
Author: D. B. Holt
Author: Brian E. Newnam
Author: Howard R. Huff
Author: C.A.J. Ammerlaan
Author: Evgeni B. Budevski
Author: