Crystal Growth and Evaluation of Silicon for VLSI and ULSI PDF Download

Are you looking for read ebook online? Search for your book and save it on your Kindle device, PC, phones or tablets. Download Crystal Growth and Evaluation of Silicon for VLSI and ULSI PDF full book. Access full book title Crystal Growth and Evaluation of Silicon for VLSI and ULSI by Golla Eranna. Download full books in PDF and EPUB format.

Crystal Growth and Evaluation of Silicon for VLSI and ULSI

Crystal Growth and Evaluation of Silicon for VLSI and ULSI PDF Author: Golla Eranna
Publisher: CRC Press
ISBN: 1482232812
Category : Science
Languages : en
Pages : 432

Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.

Crystal Growth and Evaluation of Silicon for VLSI and ULSI

Crystal Growth and Evaluation of Silicon for VLSI and ULSI PDF Author: Golla Eranna
Publisher: CRC Press
ISBN: 1482232812
Category : Science
Languages : en
Pages : 432

Book Description
Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.

ICREEC 2019

ICREEC 2019 PDF Author: Ahmed Belasri
Publisher: Springer Nature
ISBN: 9811554447
Category : Technology & Engineering
Languages : en
Pages : 659

Book Description
This book highlights peer reviewed articles from the 1st International Conference on Renewable Energy and Energy Conversion, ICREEC 2019, held at Oran in Algeria. It presents recent advances, brings together researchers and professionals in the area and presents a platform to exchange ideas and establish opportunities for a sustainable future. Topics covered in this proceedings, but not limited to, are photovoltaic systems, bioenergy, laser and plasma technology, fluid and flow for energy, software for energy and impact of energy on the environment.

Thermochemistry of Alloys

Thermochemistry of Alloys PDF Author: H. Brodowsky
Publisher: Springer Science & Business Media
ISBN: 9400910274
Category : Technology & Engineering
Languages : en
Pages : 579

Book Description
The thermochemistry of alloys has interested generations of scientists and the subject was treated in classical textbooks long ago, e.g. by Hume-Rothery, by Wagner, and by Kubaschewski and Alcock. Nevertheless, the appearance of new materials and the desire to improve traditional materials and metallurgical processes has kept up demand for more information on the thermodynamics of these systems. The advent of computing power has created new opportunities to tie various aspects and properties together, such as phase diagrams and thermodynamic functions, that are in principle thermodynamically inter related but were too cumbersome to work out before. The computer has also been a powerful tool in buUding and testing models that help to explain the underlying causes of non-ideal behavior. At the same time, these calculations have pinpointed areas, where additional and more accurate data are needed. In the laboratory, new methods, improved materials, and sophistica ted instrumentation have gradually changed the way in which experiments are done. Within the time span of perhaps thirty years, the development went from jotting down individual readings of data points to strip chart recording to automatic digital data acquisition. Scholars and students active in the field of "Thermochemistry of Alloys" convened for a NATO Advanced Study Institute at Kiel in August 1987 to discuss these developments. This book collects most of the lectures and seminar papers given at the Institute.

Flexoelectricity in Liquid Crystals

Flexoelectricity in Liquid Crystals PDF Author: Agnes Buka
Publisher: World Scientific
ISBN: 1848167997
Category : Science
Languages : en
Pages : 299

Book Description
The book intends to give a state-of-the-art overview of flexoelectricity, a linear physical coupling between mechanical (orientational) deformations and electric polarization, which is specific to systems with orientational order, such as liquid crystals. Chapters written by experts in the field shed light on theoretical as well as experimental aspects of research carried out since the discovery of flexoelectricity. Besides a common macroscopic (continuum) description the microscopic theory of flexoelectricity is also addressed. Electro-optic effects due to or modified by flexoelectricity as well as various (direct and indirect) measurement methods are discussed. Special emphasis is given to the role of flexoelectricity in pattern-forming instabilities. While the main focus of the book lies in flexoelectricity in nematic liquid crystals, peculiarities of other mesophases (bent-core systems, cholesterics, and smectics) are also reviewed. Flexoelectricity has relevance to biological (living) systems and can also offer possibilities for technical applications. The basics of these two interdisciplinary fields are also summarized.

ZnO Thin Films

ZnO Thin Films PDF Author: Paolo Mele
Publisher:
ISBN: 9781536160864
Category : Zinc oxide thin films
Languages : en
Pages : 0

Book Description
Zinc oxide (ZnO) is an n-type semiconductor with versatile applications such as optical devices in ultraviolet region, piezoelectric transducers, transparent electrode for solar cells and gas sensors. This book "ZnO Thin Films: Properties, Performance and Applications" gives a deep insight in the intriguing science of zinc oxide thin films. It is devoted to cover the most recent advances and reviews the state of the art of ZnO thin films applications involving energy harvesting, microelectronics, magnetic devices, photocatalysis, photovoltaics, optics, thermoelectricity, piezoelectricity, electrochemistry, temperature sensing. It serves as a fundamental information source on the techniques and methodologies involved in zinc oxide thin films growth, characterization, post-deposition plasma treatments and device processing. This book will be invaluable to the experts to consolidate their knowledge and provide insight and inspiration to beginners wishing to learn about zinc oxide thin films.

Nonlinear Optical Materials

Nonlinear Optical Materials PDF Author: Jerome V. Moloney
Publisher: Springer Science & Business Media
ISBN: 9780387985817
Category : Business & Economics
Languages : en
Pages : 270

Book Description
Mathematical methods play a significant role in the rapidly growing field of nonlinear optical materials. This volume discusses a number of successful or promising contributions. The overall theme of this volume is twofold: (1) the challenges faced in computing and optimizing nonlinear optical material properties; and (2) the exploitation of these properties in important areas of application. These include the design of optical amplifiers and lasers, as well as novel optical switches. Research topics in this volume include how to exploit the magnetooptic effect, how to work with the nonlinear optical response of materials, how to predict laser-induced breakdown in efficient optical devices, and how to handle electron cloud distortion in femtosecond processes.

Chemical Mechanical Planarization of Microelectronic Materials

Chemical Mechanical Planarization of Microelectronic Materials PDF Author: Joseph M. Steigerwald
Publisher: John Wiley & Sons
ISBN: 3527617752
Category : Science
Languages : en
Pages : 337

Book Description
Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.

Power Reactor Technology

Power Reactor Technology PDF Author:
Publisher:
ISBN:
Category : Nuclear engineering
Languages : en
Pages : 586

Book Description


The Rotating Disc Electrode

The Rotating Disc Electrode PDF Author: I︠U︡riĭ Viktorovich Pleskov
Publisher: Springer
ISBN:
Category : Science
Languages : en
Pages : 428

Book Description
Important advances in a subject are as often promoted by a new technique as by new concepts and theories. In the study of electrode reactions which involve diffusion in a primary or a secondary step, the development and use of techniques involving rotating disc electrodes and derived instrumentation based on ring-disc and split-ring systems has enabled advances of great importance to be made in the quantitative examination of diffusion processes at electrodes and their role in electrode processes generally. The technique allows precisely defined mass-transport conditions to be set up which can be subjected to exact mathe matical analysis so that quantitative treatment of hydrodynamic and diffusion behavior can be made. Of special interest for elec trochemists is the opportunity which the rotating ring-disc system offers for studying solution-soluble intermediates in sequential electrode processes and the kinetics of their reactions in solution. In this book by Pleskov and Filinovskii, both the experimental techniques and the mathematical analysis for the treatments of results for various conditions and types of reaction are described in detail. We believe that presentation of work that has been car ried out by means of rotating electrode techniques, to a large extent by Russian workers, in the form of a concise book will be of great value both to electrochemists and kineticists, and those interested in the physics of fluid motion.

Thermal Transport in Semiconductors

Thermal Transport in Semiconductors PDF Author: Pol Torres Alvarez
Publisher:
ISBN: 9788449076534
Category :
Languages : en
Pages : 187

Book Description
La majoria dels aparells electrònics utilitzats avui en dia tenen components basats en materials semiconductors, els quals poden ser utilitzats en un ampli rang d'aplicacions, des de transistors fins a generadors termoelèctrics o fotovoltaics. Per tal de millorar el rendiment d'aquests aparells i reduir-ne la mida és necessari conèixer la física dels materials que el formen. Quan la mida es redueix, les propietats físiques dels materials canvia, i en especial la transferència de calor a través dels dispositius. Canvis en la temperatura poden afectar directament totes les altres propietats físiques. En aquesta tesi, el transport tèrmic és analitzat des de material bulk (mides grans) fins la nanoescala sota diferents aproximacions utilitzant primers principis. Per una banda, la conductivitat tèrmica en bulk s'estudia en el marc cinètic-col·lectiu, on l'equació de transport de Boltzmann (BTE) per fonons es soluciona en el model de Guyer i Krumhansl. Aquesta solució es coneguda com Kinetic Collective Model (KCM, model cinètic col·lectiu). El KCM, el qual separa la conductivitat tèrmica en una contribució cinètica i una col·lectiva, ha permès obtenir la conductivitat tèrmica d'un gran nombre de semiconductors, coincidint perfectament amb altres solucions actuals de la BTE, i el que és més important, amb dades experimentals. Per altra banda, per mostres de mida petita, s'han considerat dues aproximacions per estudiar els efectes de la superfície. En primer lloc s'ha utilitzat una aproximació cinètica-col·lectiva. En aquest cas, en el règim cinètic, els efectes de superfície es consideren com un mecanisme microscòpic de col·lisions, mentre que en el règim col·lectiu es calculen tenint en compte consideracions hidrodinàmiques. La limitació d'aquesta aproximació per geometries complexes ha promogut el desenvolupament del segon cas: un marc completament hidrodinàmic de transport tèrmic. Una equació hidrodinàmica de transport s'ha desenvolupat a partir del model de Guyer i Krumhansl i de la termodinàmica irreversible estesa (EIT). Aquesta equació hidrodinàmica s'ha utilitzat en primer lloc per estudiar geometries simples com nanofils amb un model de conductivitat tèrmica efectiva. A més, la utilització de condicions de contorn genèriques ha permès utilitzar la equació hidrodinàmica del KCM en càlculs d'elements finits per estudiar geometries complexes. Finalment s'ha fer un anàlisi de l'espectre de fonons i s'ha proposat la seva importància a l'hora de tractar processos transitori. Tots els temes tractats en aquesta tesi en l'àmbit del KCM s'han discutit i comprat amb altres models de transport tèrmic. Paral·lel al desenvolupament del model hidrodinàmic, les expressions de transport en l'aproximació de superfície cinètica-col·lectiva així com paràmetres hidrodinàmics s'han implementat en un software de codi lliure. Compartir el model com a eina per predir el transport tèrmic permetrà establir ponts entre la física del transport tèrmic des del punt de vista microscòpic al macroscòpic.