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Author: Eric Mazaleyrat Publisher: ISBN: Category : Languages : fr Pages : 158
Book Description
LE TRAVAIL EST CONSACRE A L'ETUDE DES DISPOSITIFS MOS AU SUBSTRAT ISOLANT. APRES UNE ANALYSE DES AVANTAGES ET INCONVENIENTS DE CETTE TECHNOLOGIE PAR RAPPORT A CELLES SUR SUBSTRAT MASSIF, L'AUTEUR ETUDIE A L'AIDE DE SIMULATEURS NUMERIQUES, LE COMPORTEMENT INTERNE DE LA STRUCTURE A DESERTION PROFONDE. UNE COMPARAISON ENTRE LE SOI DE TYPE SIMOX ET LE SOS EST DEVELOPPEE. LA COMPREHENSION DES MECANISMES PHYSIQUES ENTRANT EN JEU DANS LES DIODES CONTROLLEES PAR GRILLE, PERMET D'ELABORER UN MODELE PRECIS DE TRANSISTOR MOS
Author: Eric Mazaleyrat Publisher: ISBN: Category : Languages : fr Pages : 158
Book Description
LE TRAVAIL EST CONSACRE A L'ETUDE DES DISPOSITIFS MOS AU SUBSTRAT ISOLANT. APRES UNE ANALYSE DES AVANTAGES ET INCONVENIENTS DE CETTE TECHNOLOGIE PAR RAPPORT A CELLES SUR SUBSTRAT MASSIF, L'AUTEUR ETUDIE A L'AIDE DE SIMULATEURS NUMERIQUES, LE COMPORTEMENT INTERNE DE LA STRUCTURE A DESERTION PROFONDE. UNE COMPARAISON ENTRE LE SOI DE TYPE SIMOX ET LE SOS EST DEVELOPPEE. LA COMPREHENSION DES MECANISMES PHYSIQUES ENTRANT EN JEU DANS LES DIODES CONTROLLEES PAR GRILLE, PERMET D'ELABORER UN MODELE PRECIS DE TRANSISTOR MOS
Book Description
CE MEMOIRE EST CONSACRE A LA CARACTERISATION ET A LA MODELISATION DES MATERIAUX ET DES DISPOSITIFS SILICIUM SUR ISOLANT (SOI). DANS LE PREMIER CHAPITRE, NOUS PRESENTONS LES DIFFERENTES TECHNOLOGIES DES SUBSTRATS SOI ET LEUR INTERET POUR LA MICROELECTRONIQUE. NOUS RAPPELONS ENSUITE LES PHENOMENES SPECIFIQUES DES TRANSISTORS MOS FABRIQUES SUR CES SUBSTRATS. LE DEUXIEME CHAPITRE EST CONSACRE A LA MODELISATION ET A LA CARACTERISATION D'UN PSEUDO-TRANSISTOR MOS REALISE SUR UN SUBSTRAT SIMOX. LE GRAND NOMBRE DE PARAMETRES ELECTRIQUES ET TECHNOLOGIQUES DETERMINE EST SUFFISANT POUR L'OPTIMISATION DU MATERIAU SOI ET POUR AVOIR UNE IDEE PREALABLE SUR LES PERFORMANCES DES DISPOSITIFS A REALISER SUR CES SUBSTRATS. DANS LE TROISIEME CHAPITRE, LA TECHNIQUE DU COURANT DE POMPAGE DE CHARGE ET LA MESURE DU COURANT DE FUITE SONT UTILISEES POUR MODELISER ET CARACTERISER LA DIODE CONTROLEE PAR GRILLE. LA MESURE DE CES DEUX COURANTS ELECTRIQUES PERMET LA DETERMINATION DES DEFAUTS EN VOLUME DE LA COUCHE DE SI ET AUX DEUX INTERFACES SI/SIO2. LE PHENOMENE DE COUPLAGE D'INTERFACES EST ILLUSTRE SUR PLUSIEURS CARACTERISTIQUES DES DEUX COURANTS. LE DERNIER CHAPITRE TRAITE L'INFLUENCE DE LA TEMPERATURE SUR LES CARACTERISTIQUES DES TRANSISTORS MOS SUR SOI. NOUS MONTRONS QUE LES CARACTERISTIQUES DE CES TRANSISTORS ET EN PARTICULIER LES TMOS TOTALEMENT DESERTES SONT MOINS DEGRADES AVEC LA TEMPERATURE QUE CELLES DES TRANSISTORS SUR SUBSTRATS MASSIFS. NOUS PROPOSONS DES RELATIONS EMPIRIQUES GOUVERNANT LA VARIATION DE CERTAINS PARAMETRES DU TRANSISTOR AVEC LA TEMPERATURE
Book Description
DANS LA PREMIERE PARTIE DE LA THESE, NOUS PRESENTONS UN NOUVEAU MODE DE FONCTIONNEMENT DES TRANSISTORS MOS SUR SILICIUM SUR ISOLANT, QUI CONSISTE DANS L'INVERSION FORTE ET TOTALE DU FILM DE SILICIUM. NOUS PRESENTONS ENSUITE LES AVANTAGES INDUITS PAR CE NOUVEAU MODE DE FONCTIONNEMENT. NOUS MONTRONS AUSSI QU'IL EST POSSIBLE D'ETABLIR, DANS LES DEUX CAS EXTREMES DE TRANSISTORS A FILM DE SILICIUM RESPECTIVEMENT TRES MINCE ET TRES EPAIS, DES MODELES ANALYTIQUES SIMPLES QUI DECRIVENT ADEQUATEMENT LE FONCTIONNEMENT ELECTRIQUE DES TMOS A VOLUME INVERSE (TMOS-VI) EN REGIME OHMIQUE. LA DEUXIEME PARTIE EST CONSACREE A LA PRESENTATION DES DIVERSES TECHNIQUES NUMERIQUES ET EQUATIONS PHYSIQUES QUE NOUS AVONS RETENUES POUR LA REALISATION DU SIMULATEUR ELECTRIQUE BIDIMENSIONNEL DES STRUCTURES TMOS-SSI: ISIS II. L'OBJET DE LA TROISIEME PARTIE EST D'ILLUSTRER LES POSSIBILITES D'ETUDES PAR LA SIMULATION ELECTRIQUE DES DISPOSITIFS SSI, OFFERTES PAR ISIS II
Author: Chandan Kumar Sarkar Publisher: CRC Press ISBN: 1466512660 Category : Technology & Engineering Languages : en Pages : 462
Book Description
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Author: Gennady Gildenblat Publisher: Springer Science & Business Media ISBN: 9048186145 Category : Technology & Engineering Languages : en Pages : 531
Book Description
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author: Serge Oktyabrsky Publisher: Springer Science & Business Media ISBN: 1441915478 Category : Technology & Engineering Languages : en Pages : 451
Book Description
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Author: J.-P. Colinge Publisher: Springer Science & Business Media ISBN: 9781402077739 Category : Science Languages : en Pages : 392
Book Description
Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, devices have been invented and forgotten, but, most importantly, twenty years during which SOI Technology has little by little proven it could outperform bulk silicon in every possible way. The turn of the century turned out to be a milestone for the semiconductor industry, as high-quality SOI wafers suddenly became available in large quantities. From then on, it took only a few years to witness the use of SOI technology in a wealth of applications ranging from audio amplifiers and wristwatches to 64-bit microprocessors. This book presents a complete and state-of-the-art review of SOI materials, devices and circuits. SOI fabrication and characterization techniques, SOI CMOS processing, and the physics of the SOI MOSFET receive an in-depth analysis. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, also describes the properties of other SOI devices, such as multiple gate MOSFETs, dynamic threshold devices and power MOSFETs. The advantages and performance of SOI circuits used in both niche and mainstream applications are discussed in detail. The SOI specialist will find this book invaluable as a source of compiled references covering the different aspects of SOI technology. For the non-specialist, the book serves an excellent introduction to the topic with detailed, yet simple and clear explanations. Silicon-on-Insulator Technology: Materials to VLSI, Third Edition is recommended for use as a textbook for classes on semiconductor device processing and physics at the graduate level.
Author: Eric Mazaleyrat
Author: Eric Mazaleyrat
Author: Hachemi Serghir
Author: 
Author: 
Author: Mohcine Benachir
Author: Chandan Kumar Sarkar
Author: Gennady Gildenblat
Author: 
Author: Serge Oktyabrsky
Author: J.-P. Colinge