Author: Constantinos TheodoropoulosPublisher:
ISBN:
Category :
Languages : en
Pages : 466
Book Description
Computational Studies of the Metalorganic Vapor Phase Epitaxy (movpe) of III-V Compound Semiconductors
Author: Constantinos TheodoropoulosPublisher:
ISBN:
Category :
Languages : en
Pages : 466
Book Description
Metalorganic Vapor Phase Epitaxy (MOVPE)
Author: Stuart IrvinePublisher: John Wiley & Sons
ISBN: 1119313015
Category : Technology & Engineering
Languages : en
Pages : 582
Book Description
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Surface and Interface Structure Formation in III-V Compound Semiconductors Grown by Metal Organic Vapor Phase Epitaxy
Author: Jiang LiMetalorganic Vapor Phase Epitaxy of Group III-V Compound Semiconductors
Author: Max Markus TirtowidjojoPublisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 187
Book Description
Organometallic Vapor-Phase Epitaxy
Author: Gerald B. StringfellowPublisher: Elsevier
ISBN: 0323139175
Category : Science
Languages : en
Pages : 417
Book Description
Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
CVD of Compound Semiconductors
Author: Anthony C. JonesPublisher: Wiley-VCH
ISBN:
Category : Science
Languages : en
Pages : 360
Book Description
Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This text details the deposition methods available for different materials aiming to make the chemistry of deposition accessible to the materials scientist.
Controlled Oxygen Incorporation in III-V Compound Semiconductors Grown by Metal-organic Vapor Phase Epitaxy
Author: Jen-Wu HuangSurface Reaction Processes During Metalorganic Vapor-phase Epitaxy of III/V Compound Semiconductors
Author: Yan SunMetal Organic Vapour Phase Epitaxy for the Growth of III-V Semiconductor Structures
Author: Maarten Reinier LeysPublisher:
ISBN:
Category : Crystal growth
Languages : en
Pages : 172
Book Description
Author: T. F. Kuech