Author: Centre national de la recherche scientifique (France)Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 532
Book Description
Colloque International Du CNRS Sur Les Properties and Structure of Dislocations in Semiconductors
Author: Centre national de la recherche scientifique (France)Publisher:
ISBN:
Category : Semiconductors
Languages : en
Pages : 532
Book Description
Colloque International Du C.N.R.S. Sur Les Propriétés Et Structure Des Dislocations Dans Les Semiconducteurs
Author: Properties and Structure of Dislocations in Semiconductors
Author: Structure and Properties of Dislocations in Semiconductors 1989, Proceedings of the 6th INT Symposium, Oxford, April 1989
Author: S. G. RobertsPublisher: CRC Press
ISBN:
Category : Art
Languages : en
Pages : 496
Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
International Symposium on the Structure and Properties of Dislocations in Semiconductors ; 4
Author: International Symposium on the Structure and Properties of Dislocations in Semiconductors ; 5
Author: Dislocations and Properties of Real Materials
Author: Metals Society. Metal Science CommitteePublisher: Ashgate Publishing
ISBN:
Category : Technology & Engineering
Languages : en
Pages : 388
Book Description
Index of Conference Proceedings Received
Author: British Library. Lending DivisionPublisher:
ISBN:
Category : Congresses and conventions
Languages : en
Pages : 878
Book Description
Structure and Properties of Dislocations in Semiconductors 1989, Proceedings of the 6th INT Symposium, Oxford, April 1989
Author: S. G. RobertsPublisher: CRC Press
ISBN: 9780854980604
Category : Dislocation in metals
Languages : en
Pages : 496
Book Description
The Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors was held at the University of Oxford from April 5 to 8, 1989, with participants from ten countries. This volume comprises the oral and poster presentations at the symposium, with contributions from workers who are recognised international experts in the field. There are papers on all aspects of dislocations in semiconductors, ranging from fundamental structural, electronic, optical and mechanical properties to their effects on devices. The field as a whole is an area of active research, providing an underlying knowledge and understanding for device development. There have been considerable advances in recent years, and these proceedings focus on new areas of development for the future. In a field of such importance to the understanding of the behaviour of semiconductor devices, this book is a timely summary of current research and future prospects.
Proceedings of the Fifth International Conference on the Properties and Structures of Dislocations in Semiconductors
Author: International Conference on the Properties and Structures of Dislocations in SemiconductorsPublisher:
ISBN:
Category :
Languages : en
Pages : 175
Book Description