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Charge Transport Properties of CdMnTe Radiation Detectors

Charge Transport Properties of CdMnTe Radiation Detectors PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Charge Transport Properties of CdMnTe Radiation Detectors

Charge Transport Properties of CdMnTe Radiation Detectors PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Growth, fabrication and characterization of indium-doped cadmium manganese telluride (CdMnTe)radiation detectors have been described. Alpha-particle spectroscopy measurements and time resolved current transient measurements have yielded an average charge collection efficiency approaching 100 %. Spatially resolved charge collection efficiency maps have been produced for a range of detector bias voltages. Inhomogeneities in the charge transport of the CdMnTe crystals have been associated with chains of tellurium inclusions within the detector bulk. Further, it has been shown that the role of tellurium inclusions in degrading chargecollection is reduced with increasing values of bias voltage. The electron transit time was determined from time of flight measurements. From the dependence of drift velocity on applied electric field the electron mobility was found to be n = (718 55) cm2/Vs at room temperature.

Investigation of Charge Transport Properties of CdZnTe Detectors with Synchrotron X-ray Radiation

Investigation of Charge Transport Properties of CdZnTe Detectors with Synchrotron X-ray Radiation PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
Various internal defects, such as Te inclusions, twin boundaries, dislocation, etc., are prevalent in as-grown CdZnTe (CZT) crystals, which affect the charge transport properties of CZT crystals and, therefore, worsen the performance of CZT detectors. In order to develop high quality CZT detectors, it is imperative to clarify the effects of internal defects on the charge transport properties of CZT. Simple flood illumination with nuclear radiation source cannot reveal the nature of highly localized defects in CZT. Therefore, at Brookhaven's National Synchrotron Light Source (NSLS), we have developed a unique testing system for micro-scale defect investigation of CZT, which employs an X-ray beam collimated with the spatial resolution as small as 3 x 3 [mu]m2, a microscopic size comparable to the scale of common defects in CZT. This powerful tool enables us to investigate the effect of internal defects on charge transport properties of CZT in detail.

Advanced Materials for Radiation Detection

Advanced Materials for Radiation Detection PDF Author: Krzysztof (Kris) Iniewski
Publisher: Springer Nature
ISBN: 3030764613
Category : Technology & Engineering
Languages : en
Pages : 357

Book Description
This book offers readers an overview of some of the most recent advances in the field of advanced materials used for gamma and X-ray imaging. Coverage includes both technology and applications, with an in-depth review of the research topics from leading specialists in the field. Emphasis is on high-Z materials like CdTe, CZT and GaAs, as well as perovskite crystals, since they offer the best implementation possibilities for direct conversion X-ray detectors. Authors discuss material challenges, detector operation physics and technology and readout integrated circuits required to detect signals processes by high-Z sensors.

Radiation Detection

Radiation Detection PDF Author: Douglas McGregor
Publisher: CRC Press
ISBN: 1000038580
Category : Political Science
Languages : en
Pages : 1286

Book Description
Radiation Detection: Concepts, Methods, and Devices provides a modern overview of radiation detection devices and radiation measurement methods. The book topics have been selected on the basis of the authors’ many years of experience designing radiation detectors and teaching radiation detection and measurement in a classroom environment. This book is designed to give the reader more than a glimpse at radiation detection devices and a few packaged equations. Rather it seeks to provide an understanding that allows the reader to choose the appropriate detection technology for a particular application, to design detectors, and to competently perform radiation measurements. The authors describe assumptions used to derive frequently encountered equations used in radiation detection and measurement, thereby providing insight when and when not to apply the many approaches used in different aspects of radiation detection. Detailed in many of the chapters are specific aspects of radiation detectors, including comprehensive reviews of the historical development and current state of each topic. Such a review necessarily entails citations to many of the important discoveries, providing a resource to find quickly additional and more detailed information. This book generally has five main themes: Physics and Electrostatics needed to Design Radiation Detectors Properties and Design of Common Radiation Detectors Description and Modeling of the Different Types of Radiation Detectors Radiation Measurements and Subsequent Analysis Introductory Electronics Used for Radiation Detectors Topics covered include atomic and nuclear physics, radiation interactions, sources of radiation, and background radiation. Detector operation is addressed with chapters on radiation counting statistics, radiation source and detector effects, electrostatics for signal generation, solid-state and semiconductor physics, background radiations, and radiation counting and spectroscopy. Detectors for gamma-rays, charged-particles, and neutrons are detailed in chapters on gas-filled, scintillator, semiconductor, thermoluminescence and optically stimulated luminescence, photographic film, and a variety of other detection devices.

Point Defect Characterization in Room-temperature Radiation Detectors (CdZnTe, CdMnTe, TIBr) and Semiconductor Materials Useful as Photovoltaic Devices

Point Defect Characterization in Room-temperature Radiation Detectors (CdZnTe, CdMnTe, TIBr) and Semiconductor Materials Useful as Photovoltaic Devices PDF Author: Rubi Gul
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 458

Book Description
In this research a comprehensive study is carried out on material properties and performance of semi-insulating and semiconductor materials such as CdZnTe, CdMnTe, T1Br, and GeS2, CuInS2, CuInSe2, useful as room temperature radiation detectors and as photovoltaic/phase memory materials, respectively. Particular emphasis is placed on the characterization of crystal point defects within the bandgap, which mostly contribute to the degradation of the detectors. Next, a correlation between these defects and the carrier life time is established and is related to device performance. Different deep traps and their probable origins are identified. It was concluded that deep traps are important to obtain highly resistive materials for room temperature devices. An excess of these deep traps causes a degradation of the device detection performance by lowering the carrier life time. In addition, the study focuses on the structural and chemical analysis of the photovoltaic cells, charge transport properties, and the electrical, photo and gamma radiation response of the detectors and devices. A variety of characterization techniques are employed successfully, such as: Deep Level Transient Spectroscopy (DLTS), Photoluminescence (PL) and Thermal Electron Emission (TEES) for the point defect characterization, JR microscopy for the microstructure and extended defects in the crystal, I/V and C/V measurements of the electrical response and resistivity of the material, gamma-ray spectroscopy for the radiation detection response, photocurrent measurements for testing the photo sensitivity of the detectors and solar cells, and Energy Dispersive Spectroscopy (EDS), Raman spectroscopy and SEM for the chemical analysis and structural/surface studies of the thin film.

Issues in Nuclear and Plasma Science and Technology: 2013 Edition

Issues in Nuclear and Plasma Science and Technology: 2013 Edition PDF Author:
Publisher: ScholarlyEditions
ISBN: 1490107800
Category : Science
Languages : en
Pages : 747

Book Description
Issues in Nuclear and Plasma Science and Technology: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Plasma Science. The editors have built Issues in Nuclear and Plasma Science and Technology: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Plasma Science in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in Nuclear and Plasma Science and Technology: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Comprehensive Biomedical Physics

Comprehensive Biomedical Physics PDF Author:
Publisher: Newnes
ISBN: 0444536337
Category : Science
Languages : en
Pages : 4052

Book Description
Comprehensive Biomedical Physics, Ten Volume Set is a new reference work that provides the first point of entry to the literature for all scientists interested in biomedical physics. It is of particularly use for graduate and postgraduate students in the areas of medical biophysics. This Work is indispensable to all serious readers in this interdisciplinary area where physics is applied in medicine and biology. Written by leading scientists who have evaluated and summarized the most important methods, principles, technologies and data within the field, Comprehensive Biomedical Physics is a vital addition to the reference libraries of those working within the areas of medical imaging, radiation sources, detectors, biology, safety and therapy, physiology, and pharmacology as well as in the treatment of different clinical conditions and bioinformatics. This Work will be valuable to students working in all aspect of medical biophysics, including medical imaging and biomedical radiation science and therapy, physiology, pharmacology and treatment of clinical conditions and bioinformatics. The most comprehensive work on biomedical physics ever published Covers one of the fastest growing areas in the physical sciences, including interdisciplinary areas ranging from advanced nuclear physics and quantum mechanics through mathematics to molecular biology and medicine Contains 1800 illustrations, all in full color

CdMnTe in X-ray and Gamma-ray Detection

CdMnTe in X-ray and Gamma-ray Detection PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
CdMnTe can be a good candidate for gamma-ray detection because of its wide band-gap, high resistivity, and good electro-transport properties. Further, the ability to grow CMT crystals at relatively low temperatures ensures a high yield for manufacturing detectors with good compositional uniformity and few impurities. Our group at Brookhaven National Laboratory is investigating several CMT crystals, selecting a few of them to make detectors. In this paper, we discuss our initial characterization of these crystals and describe our preliminary results with a gamma-ray source.

Chemical Abstracts

Chemical Abstracts PDF Author:
Publisher:
ISBN:
Category : Chemistry
Languages : en
Pages : 2616

Book Description


Electron Backscatter Diffraction in Materials Science

Electron Backscatter Diffraction in Materials Science PDF Author: Adam J. Schwartz
Publisher: Springer Science & Business Media
ISBN: 1475732058
Category : Technology & Engineering
Languages : en
Pages : 352

Book Description
Crystallographic texture or preferred orientation has long been known to strongly influence material properties. Historically, the means of obtaining such texture data has been though the use of x-ray or neutron diffraction for bulk texture measurements, or transmission electron microscopy or electron channeling for local crystallographic information. In recent years, we have seen the emergence of a new characterization technique for probing the microtexture of materials. This advance has come about primarily through the automated indexing of electron backscatter diffraction (EBSD) patterns. The first commercially available system was introduced in 1994, and since then of sales worldwide has been dramatic. This has accompanied widening the growth applicability in materials scienceproblems such as microtexture, phase identification, grain boundary character distribution, deformation microstructures, etc. and is evidence that this technique can, in some cases, replace more time-consuming transmission electron microscope (TEM) or x-ray diffraction investigations. The benefits lie in the fact that the spatial resolution on new field emission scanning electron microscopes (SEM) can approach 50 nm, but spatial extent can be as large a centimeter or greater with a computer controlled stage and montagingofthe images. Additional benefits include the relative ease and low costofattaching EBSD hardware to new or existing SEMs. Electron backscatter diffraction is also known as backscatter Kikuchi diffraction (BKD), or electron backscatter pattern technique (EBSP). Commercial names for the automation include Orientation Imaging Microscopy (OIMTM) and Automated Crystal Orientation Mapping (ACOM).