![Characterization of Piezoelectric AIN Thin Films Deposited on Silicon by RF Reactive Magnetron Sputtering at Low Temperature for Acoustic Wave Devices [microform] PDF](https://books.google.com/books/content/images/frontcover/rqgBugEACAAJ?fife=w150-h200)
Author: Akhtar MirfazliPublisher: National Library of Canada = Bibliothèque nationale du Canada
ISBN: 9780612939431
Category : Acoustic surface wave devices
Languages : en
Pages : 192
Book Description
Characterization of Piezoelectric AIN Thin Films Deposited on Silicon by RF Reactive Magnetron Sputtering at Low Temperature for Acoustic Wave Devices [microform]
![Characterization of Piezoelectric AIN Thin Films Deposited on Silicon by RF Reactive Magnetron Sputtering at Low Temperature for Acoustic Wave Devices [microform] PDF](https://books.google.com/books/content/images/frontcover/rqgBugEACAAJ?fife=w80-h100)
Author: Akhtar MirfazliPublisher: National Library of Canada = Bibliothèque nationale du Canada
ISBN: 9780612939431
Category : Acoustic surface wave devices
Languages : en
Pages : 192
Book Description
Optical Characterization of Annealed Silicon Carbide (SIC) Thin Film Deposited by RF Magnetron Sputtering Technique
Author: Kartiyani MuniandyPhysics Briefs
Author: Reactive Ion Enhanced Magnetron Sputtering of Nitride Thin Films
Author: Al-Ahsan TalukderPublisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 0
Book Description
Magnetron sputtering is a popular vacuum plasma coating technique used for depositing metals, dielectrics, semiconductors, alloys, and compounds onto a wide range of substrates. In this work, we present two popular types of magnetron sputtering, i.e., pulsed DC and RF magnetron sputtering, for depositing piezoelectric aluminum nitride (AlN) thin films with high Young's modulus. The effects of important process parameters on the plasma I-V characteristics, deposition rate, and the properties of the deposited AlN films, are studied comprehensively. The effects of these process parameters on Young's modulus of the deposited films are also presented. Scanning electron microscope imaging revealed a c-axis oriented columnar growth of AlN. Performance of surface acoustic devices, utilizing the AlN films deposited by magnetron sputtering, are also presented, which confirms the differences in qualities and microstructures of the pulsed DC and RF sputtered films. The RF sputtered AlN films showed a denser microstructure with smaller grains and a smoother surface than the pulsed DC sputtered films. However, the deposition rate of RF sputtering is about half of the pulsed DC sputtering process. We also present a novel ion source enhanced pulsed DC magnetron sputtering for depositing high-quality nitrogen-doped zinc telluride (ZnTe:N) thin films. This ion source enhanced magnetron sputtering provides an increased deposition rate, efficient N-doping, and improved electrical, structural, and optical properties than the traditional magnetron sputtering. Ion source enhanced deposition leads to ZnTe:N films with smaller lattice spacing and wider X-ray diffraction peak, which indicates denser films with smaller crystallites embedded in an amorphous matrix.
The Formation and Characterization of RF Reactively Sputtered Iron Oxide Thin Films as Magnetic Recording Media
Author: Jong-Kai LinGrowth and Characterization of Ito Thin Film by Magnetron Sputtering
Author: Öcal TunaPublisher: LAP Lambert Academic Publishing
ISBN: 9783838365695
Category :
Languages : en
Pages : 100
Book Description
In this study Indium Tin Oxide (ITO) thin films were grown by both DC and RF magnetron sputtering techniques. To know deposition rate of ITO, system was calibrated for both DCMS and RFMS and then ITO were grown on glass substrate with the thickness of 70 nm and 40 nm by changing substrate temperature. The effect of substrate temperature, film thickness and sputtering method on structural, electrical and optical properties were investigated. The results show that substrate temperature and film thickness substantially affects the film properties, especially crystallization and resistivity. The thin films grown at the lower than 150 oC showed amorphous structure. However, crystallization was detected with the furtherincrease of substrate temperature. Band gap of ITO was calculated to be about 3.64eV at the substrate temperature of 150 oC, and itwidened with substrate temperature increment. From electrical measurements the resistivity at room temperature was obtained 1.28x10-4 and 1.29x10-4 D-cm, for DC and RF sputtered films, respectively. We also measured temperature dependence resistivity and the Hall coefficient of the films, and we calculated carrier concentration and Hall mobility."
Metal Based Thin Films for Electronics
Author: Klaus WetzigPublisher: John Wiley & Sons
ISBN: 3527606475
Category : Science
Languages : en
Pages : 390
Book Description
This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.
Reactive Magnetron Sputtering as a Deposition Tool for Piezoelectric Thin Films
Author: Troy TaylorPreparation and Characterization of Dielectric Thin Films by RF Magnetron-Sputtering with (Ba0.3Sr0.7)(Zn1
Author: Feng ShiPlasma Deposition of Amorphous Silicon-Based Materials
Author: Pio CapezzutoPublisher: Elsevier
ISBN: 0080539106
Category : Science
Languages : en
Pages : 339
Book Description
Semiconductors made from amorphous silicon have recently become important for their commercial applications in optical and electronic devices including FAX machines, solar cells, and liquid crystal displays. Plasma Deposition of Amorphous Silicon-Based Materials is a timely, comprehensive reference book written by leading authorities in the field. This volume links the fundamental growth kinetics involving complex plasma chemistry with the resulting semiconductor film properties and the subsequent effect on the performance of the electronic devices produced. - Focuses on the plasma chemistry of amorphous silicon-based materials - Links fundamental growth kinetics with the resulting semiconductor film properties and performance of electronic devices produced - Features an international group of contributors - Provides the first comprehensive coverage of the subject, from deposition technology to materials characterization to applications and implementation in state-of-the-art devices