Author: Moran Press-YekymovPublisher:
ISBN:
Category :
Languages : en
Pages : 122
Book Description
Characterization of Aluminum Doped Zinc Oxide Thin Films Fabricated by Using Rectangular Filtered Vacuum Arc Deposition on Large Flat Area Glass Substates
Author: Moran Press-YekymovCharacterization of Aluminum Doped Zinc Oxide Thin Films Fabricated Using an Ion-beam Assisted Sputtering Technique
Author: Owan WatkinsPublisher:
ISBN:
Category : Aluminum foil
Languages : en
Pages : 186
Book Description
Zinc Oxide Thin Film Production and Characterization, Using Filtered Vacuum Arc Deposition
Author: David TalPublisher:
ISBN:
Category : Vacuum arcs
Languages : en
Pages : 165
Book Description
Characterization of Aluminum Doped Zinc Oxide Thin Films for Photovoltaic Applications
Author: Bojanna P. ShantheyandaPublisher:
ISBN:
Category : Aluminum
Languages : en
Pages : 76
Book Description
Growing demand for clean source of energy in the recent years has increased the manufacture of solar cells for converting sun energy directly into electricity. Research has been carried out around the world to make a cheaper and more efficient solar cell technology by employing new architectural designs and developing new materials to serve as light absorbers and charge carriers. Aluminum doped Zinc Oxide thin film, a Transparent conductive Oxides (TCO) is used as a window material in the solar cell these days. Its increased stability in the reduced ambient, less expensive and more abundance make it popular among the other TCO's. It is the aim of this work to obtain a significantly low resistive ZnO:Al thin film with good transparency. Detailed electrical and materials studies is carried out on the film in order to expand knowledge and understanding. RF magnetron sputtering has been carried out at various substrate temperatures using argon, oxygen and hydrogen gases with various ratios to deposit this polycrystalline films on thermally grown SiO2 and glass wafer. The composition of the films has been determined by X-ray Photoelectron Spectroscopy and the identification of phases present have been made using X-ray diffraction experiment. Surface imaging of the film and roughness calculations are carried out using Scanning Electron Microscopy and Atomic Force Microscopy respectively. Determination of resistivity using 4-Probe technique and transparency using UV spectrophotometer were carried out as a part of electrical and optical characterization on the obtained thin film. The deposited thin films were later annealed in vacuum at various high temperatures and the change in material and electrical properties were analyzed.
High Quality ZnO
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 34
Book Description
Aluminum-doped zinc oxide, ZnO:Al or AZO, is a well-known n-type transparent conducting oxide with great potential in a number of applications currently dominated by indium tin oxide (ITO). In this study, the optical and electrical properties of AZO thin films deposited on glass and silicon by pulsed filtered cathodic arc deposition are systematically studied. In contrast to magnetron sputtering, this technique does not produce energetic negative ions, and therefore ion damage can be minimized. The quality of the AZO films strongly depends on the growth temperature while only marginal improvements are obtained with post-deposition annealing. The best films, grown at a temperature of about 200?C, have resistivities in the low to mid 10-4 Omega cm range with a transmittance better than 85percent in the visible part of the spectrum. It is remarkable that relatively good films of small thickness (60 nm) can be fabricated using this method.
Zinc Oxide Thin Film Production and Characterization, Using Fltered Vacuum Arc Deposition
Author: David Tal (chemist.)Publisher:
ISBN:
Category : Physics
Languages : en
Pages : 330
Book Description
Structural Characterization of Aluminum Oxide Thin Films Using Solid-state NMR
Author: Yvonne AfriyiePublisher:
ISBN:
Category : Electronic dissertations
Languages : en
Pages : 66
Book Description
Aluminum is an ideal metal for solution-processed oxide dielectrics because it can form polymerized hydroxo networks in aqueous solution and dense amorphous oxide dielectrics by vacuum methods. Atomic layer deposition (ALD) is one of the traditional vacuum methods for thin film deposition, however, ALD is not the most economically feasible method for thin film fabrication due to high operational cost and limitations in large surface-area applications. Solution deposition is a more economical deposition method which is more cost-saving and ideal for large surface area thin film fabrication. The behavior of the solution-solid structural conversion remains an enigma; thus, this research seeks to understand the structural transformation of thin films from solution to solid in order to fabricate films with optimal properties.Aluminum oxide (AlxOy) thin films prepared from aqueous solution-deposited cluster precursors have been proposed for use in devices such as high-k dielectrics in solar cell materials. The films are fabricated with different aluminum-derived precursors, spin-coated on a substrate and annealed at a range of temperatures. The low temperature range of these films are amorphous, therefore lack long range order. Solid-state nuclear magnetic resonance (ssNMR) can be used to determine the amorphous structure of these materials. Herein, a combination of X-ray diffraction (XRD), and NMR techniques are used to elucidate the transformation of these thin films as they are annealed to high temperatures.
Synthesis and Characterization of Aluminium - Doped Zinc Oxide Thin Films for Cell
Author: Hang Khume TanPublisher:
ISBN:
Category : Electric resistance
Languages : en
Pages : 125
Book Description
Remote Plasma Sputtered Al-doped Zinc Oxide Thin Films
Author: Beaujolais Charity BussellPublisher:
ISBN:
Category :
Languages : en
Pages : 0
Book Description
Author: