Author: Allen Ray HefnerPublisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 336
Book Description
Characterization and Modeling of the Power Insulated Gate Bipolar Transistor
Author: Allen Ray HefnerPublisher:
ISBN:
Category : Bipolar transistors
Languages : en
Pages : 336
Book Description
Modeling and Characterization of the Insulated Gate Bipolar Transistor in the Near-threshold Region
Author: Farah P. VandrevalaPublisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The Insulated Gate Bipolar Transistor (IGBT) is a power semiconductor device widely used in high-speed switching applications. Due to aging and internal heating, the device is prone to a failure mechanism known as latch-up in which, changes in the threshold voltage and the on-state voltage of the device may ultimately lead to loss of switching control. Since IGBTs are typically operated at high voltages and currents, the datasheets do not provide information on the static characteristics of the device for voltages close to the threshold, which is a useful region for understanding the underlying device physics. In this thesis a simplified IGBT model is presented that attempts to provide a magnified view of the static characteristics close to the threshold voltage. The model is developed based on the device structure and is optimized to fit the measured characteristics in the near-threshold voltage range.
Characterization and Modeling of the Power Insulated Bipolar Transistor
Author: Allen Ray HefnerModeling, Design, Fabrication, and Characterization of the Insulated Gate Bipolar Transistor (IGBT) with Integrated Current Sensors
Author: Cheng ShenInsulated Gate Bipolar Transistor IGBT Theory and Design
Author: Vinod Kumar KhannaPublisher: John Wiley & Sons
ISBN: 047166099X
Category : Technology & Engineering
Languages : en
Pages : 648
Book Description
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Characterization of Power IGBTs Under Pulsed Power Conditions
Author: Publisher:
ISBN:
Category :
Languages : en
Pages :
Book Description
The power insulated gate bipolar transistor (IGBT) is used in many types of applications. Although the use of the power IGBT has been well characterized for many continuous operation power electronics applications, little published information is available regarding the performance of a given IGBT under pulsed power conditions. Additionally, component libraries in circuit simulation software packages have a finite number of IGBTs. This paper presents a process for characterizing the performance of a given power IGBT under pulsed power conditions. Specifically, signals up to 3.5 kV and 1 kA with 1-10 [mu]s pulse widths have been applied to a Powerex QIS4506001 IGBT. This process utilizes least squares curve fitting techniques with collected data to determine values for a set of modeling parameters. These parameters were used in the Oziemkiewicz implementation of the Hefner model for the IGBT that is utilized in some circuit simulation software packages. After the nominal parameter values are determined, they can be inserted into the Oziemkiewicz implementation to simulate a given IGBT.
Design, Simulation, Fabrication and Characterization of the Insulated Gate Bipolar Transistor with Base Resistance Controlled Thyristor (IGBT/BRT).
Author: Lin WangLarge-signal Characterization and Modeling of the Heterojunction Bipolar Transistor
Author: Douglas Andrew TeeterPublisher:
ISBN:
Category :
Languages : en
Pages : 546
Book Description
Design, Characterization, Modeling and Analysis of High Voltage Silicon Carbide Power Devices
Author: Jun WangPublisher:
ISBN:
Category :
Languages : en
Pages : 186
Book Description
Keywords: emitter turn-off thyristor (ETO), insulated gate bipolar transistor (IGBT), Silicon carbide (SiC), metal-oxide-semiconductor field effect transistor, solid-state transformer (SST).
Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors
Author: Publisher:
ISBN:
Category :
Languages : en
Pages : 29
Book Description
The high power operation of the heterojunction bipolar transistor (HBT) has been analyzed by experimentally determining the junction temperature and separating temperature effects from other high power effects. In addition, an HBT large signal model has been developed that is valid for the linear, saturation, and cutoff regions, with low frequency temperature effects included. This model has been implemented in a commercial harmonic balance simulator, LIBRA from EEsof, making it particularly suitable for the design and simulation of HBT microwave power integrated circuits. In addition, an analysis of the most temperature-sensitive microwave elements for the HBT has been performed using measured s-parameter data at five elevated temperatures from 23 deg. C to 226 deg. C. The element values were compared to a physical model showing excellent agreement in magnitude and direction of change with temperature and bias. The transistor cutoff frequencies were also measured and calculated, showing a monotonic decrease with temperature of approximately 50% over the 200 deg. C range. Heterojunction Bipolar Transistor, Large Signal Modeling, Thermal Effects.