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Author: Wade H. Shafer Publisher: Springer Science & Business Media ISBN: 1461303931 Category : Science Languages : en Pages : 427
Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS)* at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dis semination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volumes were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 39 (thesis year 1994) a total of 13,953 thesis titles from 21 Canadian and 159 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this impor tant annual reference work. While Volume 39 reports theses submitted in 1994, on occasion, certain uni versities do report theses submitted in previous years but not reported at the time.
Author: Wade H. Shafer Publisher: Springer Science & Business Media ISBN: 1461303931 Category : Science Languages : en Pages : 427
Book Description
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS)* at Purdue University in 1957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dis semination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all concerned if the printing and distribution of the volumes were handled by an international publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Corporation of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 39 (thesis year 1994) a total of 13,953 thesis titles from 21 Canadian and 159 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this impor tant annual reference work. While Volume 39 reports theses submitted in 1994, on occasion, certain uni versities do report theses submitted in previous years but not reported at the time.
Author: Cheol Seong Hwang Publisher: Springer Science & Business Media ISBN: 146148054X Category : Science Languages : en Pages : 266
Book Description
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Author: Sorin Cristoloveanu Publisher: Springer Science & Business Media ISBN: 9780792395485 Category : Technology & Engineering Languages : en Pages : 414
Book Description
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Author: Marin Alexe Publisher: Springer Science & Business Media ISBN: 9783540210498 Category : Science Languages : en Pages : 524
Book Description
During the past decade direct wafer bonding has developed into a mature materials integration technology. This book presents state-of-the-art reviews of the most important applications of wafer bonding written by experts from industry and academia. The topics include bonding-based fabrication methods of silicon-on-insulator, photonic crystals, VCSELs, SiGe-based FETs, MEMS together with hybrid integration and laser lift-off. The non-specialist will learn about the basics of wafer bonding and its various application areas, while the researcher in the field will find up-to-date information about this fast-moving area, including relevant patent information.
Author: Sung-Mo Kang Publisher: ISBN: 9780071243421 Category : Digital integrated circuits Languages : en Pages : 655
Book Description
The fourth edition of CMOS Digital Integrated Circuits: Analysis and Design continues the well-established tradition of the earlier editions by offering the most comprehensive coverage of digital CMOS circuit design, as well as addressing state-of-the-art technology issues highlighted by the widespread use of nanometer-scale CMOS technologies. In this latest edition, virtually all chapters have been re-written, the transistor model equations and device parameters have been revised to reflect the sigificant changes that must be taken into account for new technology generations, and the material has been reinforced with up-to-date examples. The broad-ranging coverage of this textbook starts with the fundamentals of CMOS process technology, and continues with MOS transistor models, basic CMOS gates, interconnect effects, dynamic circuits, memory circuits, arithmetic building blocks, clock and I/O circuits, low power design techniques, design for manufacturability and design for testability.
Author: Paul Siffert Publisher: Springer Science & Business Media ISBN: 3662098970 Category : Technology & Engineering Languages : en Pages : 552
Book Description
With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.
Author: Richard W. Siegel Publisher: Springer Science & Business Media ISBN: 9780792358541 Category : Technology & Engineering Languages : en Pages : 378
Book Description
Timely information on scientific and engineering developments occurring in laboratories around the world provides critical input to maintaining the economic and technological strength of the United States. Moreover, sharing this information quickly with other countries can greatly enhance the productivity of scientists and engineers. These are some of the reasons why the National Science Foundation (NSF) has been involved in funding science and technology assessments comparing the United States and foreign countries since the early 1980s. A substantial number of these studies have been conducted by the World Technology Evaluation Center (WTEC) managed by Loyola College through a cooperative agreement with NSF. The National Science and Technology Council (NSTC), Committee on Technology's Interagency Working Group on NanoScience, Engineering and Technology (CT/IWGN) worked with WTEC to develop the scope of this Nanostucture Science and Technology report in an effort to develop a baseline of understanding for how to strategically make Federal nanoscale R&D investments in the coming years. The purpose of the NSTC/WTEC activity is to assess R&D efforts in other countries in specific areas of technology, to compare these efforts and their results to U. S. research in the same areas, and to identify opportunities for international collaboration in precompetitive research. Many U. S. organizations support substantial data gathering and analysis efforts focusing on nations such as Japan. But often the results of these studies are not widely available. At the same time, government and privately sponsored studies that are in the public domain tend to be "input" studies.
Author: Howard Huff Publisher: Springer Science & Business Media ISBN: 9783540210818 Category : Science Languages : en Pages : 740
Book Description
Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore's Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxide thickness in the single-digit nanometer regime); and future directions and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond.
Author: Wade H. Shafer
Author: Wade H. Shafer
Author: Iowa State University
Author: Cheol Seong Hwang
Author: Sorin Cristoloveanu
Author: Marin Alexe
Author: 
Author: Sung-Mo Kang
Author: Paul Siffert
Author: Richard W. Siegel
Author: Howard Huff