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Author: R.A. Abram Publisher: Springer Science & Business Media ISBN: 1475707703 Category : Science Languages : en Pages : 383
Book Description
This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.
Author: R.A. Abram Publisher: Springer Science & Business Media ISBN: 1475707703 Category : Science Languages : en Pages : 383
Book Description
This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.
Author: Milan Jaros Publisher: Oxford University Press, USA ISBN: Category : Language Arts & Disciplines Languages : en Pages : 272
Book Description
Textbook for third-year undergraduate to first year graduate students in physics and microelectronics. Outlines concepts concerning the description and applications of novel semiconductor microstructures such as quantum wells, superlattices, and heterojunction microdevices in general (e.g. lasers, transistors, optical detectors, and switches). Annotation copyrighted by Book News, Inc., Portland, OR
Author: I. M. Tsidilkovski Publisher: Elsevier ISBN: 1483157865 Category : Science Languages : en Pages : 417
Book Description
Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillations, magnetophonon resonance, and magneto-optical phenomena are discussed. Experimental physicists, theoretical physicists, students and research workers, and engineers working in the field of semiconductor electronics will find this book a great source of vital information.
Author: A. Stella Publisher: Elsevier ISBN: 1483290360 Category : Science Languages : en Pages : 496
Book Description
This book is concerned with the dynamic field of semiconductor microstructures and interfaces. Several topics in the fundamental properties of interfaces, superlattices and quantum wells are included, as are papers on growth techniques and applications. The papers deal with the interaction of theory, experiments and applications within the field, and the outstanding contributions are from both the academic and industrial worlds.
Author: An-Ben Chen Publisher: Springer Science & Business Media ISBN: 1461303176 Category : Science Languages : en Pages : 358
Book Description
In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.
Author: Harold L. Grubin Publisher: Springer Science & Business Media ISBN: 1489923446 Category : Science Languages : en Pages : 474
Book Description
The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
Author: M. J. Kelly Publisher: Clarendon Press ISBN: 0191590096 Category : Science Languages : en Pages : 569
Book Description
This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.
Author: Hans D. Hochheimer Publisher: Springer Science & Business Media ISBN: 1489924809 Category : Science Languages : en Pages : 481
Book Description
The role of high pressure experiments in the discovery of supercon ducting materials with a T. above liquid nitrogen temperature has demon strated the importance of such experiments. The same role holds true in the tailoring of materials for optoelectronic devices. In addition, much progress has been made recently in the search for metallic hydro gen, and the application of high pressure in polymer research has brought forth interesting results. These facts together with the suc cess of previous small size meetings (such as the "First International Conference on the Physics of Solids at High Pressure", held in 1965 in Tucson, Arizona, U. S. A. ; "High Pressure and Low Temperature Physics", held in 1977 in Cleveland, Ohio, U. S. A. ; and "Physics of Solids Under High Pressure", held in 1981 in bad Honnef, Germany), motivated us to organize a workshop with emphasis on the newest results and trends in these fields of high pressure research. Furthermore, it was intended to mix experienced and young scien tists to realize an idea best expressed in a letter by Prof. Weinstein: "I think it is an excellent idea. I have often felt that the number of excellent young researchers in the high pressure field need an opportu nity to put forward their work with due recognition. " Thanks to the support of the key speakers, we were able to achieve this goal and had more than 50\ young participants.
Author: D.J. Lockwood Publisher: Springer ISBN: 1489936955 Category : Science Languages : en Pages : 592
Book Description
Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.
Author: R.A. Abram
Author: R.A. Abram
Author: Milan Jaros
Author: I. M. Tsidilkovski
Author: A. Stella
Author: An-Ben Chen
Author: Changhua Bao
Author: Harold L. Grubin
Author: M. J. Kelly
Author: Hans D. Hochheimer
Author: D.J. Lockwood