Ballistic Electrons in a Submicron Semiconducting Structure PDF Download

Author: Harold Urey Baranger
Publisher:
ISBN:
Category : Electron transport
Languages : en
Pages : 552

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Author: N. Balkan
Publisher:
ISBN: 9780198500582
Category : Science
Languages : en
Pages : 536

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Book Description
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. When this happens, Ohm's Law breaks down: current no longer increases linearly with voltage and may even decrease. Hot electrons have long been a challenging problem in condensed matter physics and remain important in semiconductor research. Recent advances in technology have led to semiconductors with submicron dimensions, where electrons can be confined to two (quantum well), one (quantum wire), or zero (quantum dot) dimensions. In these devices small voltages heat electrons rapidly, inducing complex nonlinear behavior; the study of hot electrons is central to their further development. This book is the only comprehensive and up-to-date coverage of hot electrons. Intended for both established researchers and graduate students, it gives a complete account of the historical development of the subject, together with current research and future trends, and covers the physics of hot electrons in bulk and low-dimensional device technology. The contributions are from leading scientists in the field and are grouped broadly into five categories: introduction and overview; hot electron-phonon interactions and ultra-fast phenomena in bulk and two-dimensional structures; hot electrons in quantum wires and dots; hot electron tunneling and transport in superlattices; and novel devices based on hot electron transport.

Author:
Publisher:
ISBN:
Category :
Languages : en
Pages : 52

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Author: R.S. Popovic
Publisher: CRC Press
ISBN: 1420034227
Category : Science
Languages : en
Pages : 430

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This is the second edition of a very popular 1991 book describing the physics and technology of semiconductor electronic devices exploiting the Hall effect. These are magnetic field sensitive devices such as Hall elements, magnetoresistors, and magnetotransistors. Hall effect devices are commonly used as magnetic field sensors and as means for char

Author: Christian Joachim
Publisher: Springer Science & Business Media
ISBN: 3642281729
Category : Science
Languages : en
Pages : 246

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This volume documents the first International Workshop on Atomic Scale Interconnection Machines organised by the European Integrated Project AtMol in June 2011 in Singapore. The four sessions, discussed here in revised contributions by high level speakers, span the subjects of multi-probe UHV instrumentation, atomic scale nano-material nanowires characterization, atomic scale surface conductance measurements, surface atomic scale mechanical machineries. This state-of-the-art account brings academic researchers and industry engineers access to the tools they need to be at the forefront of the atomic scale technology revolution.

Author: Jyoti Prasad Banerjee
Publisher: CRC Press
ISBN: 1482223058
Category : Science
Languages : en
Pages : 412

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Book Description
This book is a comprehensive text on the physics of semiconductors and nanostructures for a large spectrum of students at the final undergraduate level studying physics, material science and electronics engineering. It offers introductory and advanced courses on solid state and semiconductor physics on one hand and the physics of low dimensional semiconductor structures on the other in a single text book. Key Features Presents basic concepts of quantum theory, solid state physics, semiconductors, and quantum nanostructures such as quantum well, quantum wire, quantum dot and superlattice In depth description of semiconductor heterojunctions, lattice strain and modulation doping technique Covers transport in nanostructures under an electric and magnetic field with the topics: quantized conductance, Coulomb blockade, and integer and fractional quantum Hall effect Presents the optical processes in nanostructures under a magnetic field Includes illustrative problems with hints for solutions in each chapter Physics of Semiconductors and Nanostructures will be helpful to students initiating PhD work in the field of semiconductor nanostructures and devices. It follows a unique tutorial approach meeting the requirements of students who find learning the concepts difficult and want to study from a physical perspective.

Author: Tsuneya Ando
Publisher: Springer Science & Business Media
ISBN: 3642719767
Category : Technology & Engineering
Languages : en
Pages : 293

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Book Description
Semiconductor technology has developed considerably during the past several decades. The exponential growth in microelectronic processing power has been achieved by a constant scaling down of integrated cir,cuits. Smaller fea ture sizes result in increased functional density, faster speed, and lower costs. One key ingredient of the LSI technology is the development of the lithog raphy and microfabrication. The current minimum feature size is already as small as 0.2 /tm, beyond the limit imposed by the wavelength of visible light and rapidly approaching fundamental limits. The next generation of devices is highly likely to show unexpected properties due to quantum effects and fluctuations. The device which plays an important role in LSIs is MOSFETs (metal oxide-semiconductor field-effect transistors). In MOSFETs an inversion layer is formed at the interface of silicon and its insulating oxide. The inversion layer provides a unique two-dimensional (2D) system in which the electron concentration is controlled almost freely over a very wide range. Physics of such 2D systems was born in the mid-1960s together with the development of MOSFETs. The integer quantum Hall effect was first discovered in this system.

Author: Guenther Neubauer
Publisher: Springer Science & Business Media
ISBN: 3642848575
Category : Technology & Engineering
Languages : en
Pages : 367

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Book Description
Owing to new physical, technological, and device concepts of low-dimensionalelectronic systems, the physics and fabrication of quasi-zero, one- and two-dimensional systems are rapidly growing fields. The contributions presented in this volume cover results of nanostructure fabrication including recently developed techniques, for example, tunneling probe techniques and molecular beam epitaxy, quantum transport including the integer and fractional quantum Hall effect, optical and transport studies of the two-dimensional Wigner solid, phonon studies of low-dimensional systems, and Si/SiGe heterostructures and superlattices. To the readers new in the field this volume gives a comprehensive introduction and for the experts it is an update of their knowledge and a great help for decisions about future research activities.

Author: Victor Barsan
Publisher: BoD – Books on Demand
ISBN: 9535102672
Category : Science
Languages : en
Pages : 305

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Book Description
Among the branches of classical physics, electromagnetism is the domain which experiences the most spectacular development, both in its fundamental and practical aspects. The quantum corrections which generate non-linear terms of the standard Maxwell equations, their specific form in curved spaces, whose predictions can be confronted with the cosmic polarization rotation, or the topological model of electromagnetism, constructed with electromagnetic knots, are significant examples of recent theoretical developments. The similarities of the Sturm-Liouville problems in electromagnetism and quantum mechanics make possible deep analogies between the wave propagation in waveguides, ballistic electron movement in mesoscopic conductors and light propagation on optical fibers, facilitating a better understanding of these topics and fostering the transfer of techniques and results from one domain to another. Industrial applications, like magnetic refrigeration at room temperature or use of metamaterials for antenna couplers and covers, are of utmost practical interest. So, this book offers an interesting and useful reading for a broad category of specialists.

Author: Michael S. Shur
Publisher: Springer Science & Business Media
ISBN: 1489919899
Category : Technology & Engineering
Languages : en
Pages : 677

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Book Description
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.