Author: Khoa Minh PhanPublisher:
ISBN:
Category : Silicon-on-insulator technology
Languages : en
Pages : 178
Book Description
Analog Circuits for a Single Chip High-temperature Silicon-on-insulator Gate Driver for Silicon Carbide Power Electronics
Author: Khoa Minh PhanPublisher:
ISBN:
Category : Silicon-on-insulator technology
Languages : en
Pages : 178
Book Description
A High-temperature, High-voltage SOI Gate Driver Integrated Circuit with High Drive Current for Silicon Carbide Power Switches
Author: Mohammad Aminul HuquePublisher:
ISBN:
Category :
Languages : en
Pages : 105
Book Description
High-temperature integrated circuit (IC) design is one of the new frontiers in microelectronics that can significantly improve the performance of the electrical systems in extreme environment applications, including automotive, aerospace, well-logging, geothermal, and nuclear. Power modules (DC-DC converters, inverters, etc.) are key components in these electrical systems. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing silicon carbide (SiC) based power switches which are capable of operating at much higher temperature than silicon (Si) and gallium arsenide (GaAs) based conventional devices. For successful realization of such high-temperature power electronic circuits, associated control electronics also need to perform at high temperature. In any power converter, gate driver circuit performs as the interface between a low-power microcontroller and the semiconductor power switches. This dissertation presents design, implementation, and measurement results of a silicon-on-insulator (SOI) based high-temperature (>200° C) and high-voltage (>30 V) universal gate driver integrated circuit with high drive current (>3 A) for SiC power switches. This mixed signal IC has primarily been designed for automotive applications where the under-hood temperature can reach 200° C. Prototype driver circuits have been designed and implemented in a Bipolar-CMOS- DMOS (BCD) on SOI process and have been successfully tested up to 200° C ambient temperature driving SiC switches (MOSFET and JFET) without any heat sink and thermal management. This circuit can generate 30V peak-to-peak gate drive signal and can source and sink 3A peak drive current. Temperature compensating and temperature independent design techniques are employed to design the critical functional units like dead-time controller and level shifters in the driver circuit. Chip-level layout techniques are employed to enhance the reliability of the circuit at high temperature. High-temperature test boards have been developed to test the prototype ICs. An ultra low power on-chip temperature sensor circuit has also been designed and integrated into the gate-driver die to safeguard the driver circuit against excessive die temperature (> 220° C). This new temperature monitoring approach utilizes a reverse biased p-n junction diode as the temperature sensing element. Power consumption of this sensor circuit is less than 10 [mu]W at 200° C.
A High-temperature Silicon-on-insulator Gate Driver IC for Silicon Carbide Junction Field Effect Transistor
Author: Edgar Santiago CilioPublisher:
ISBN:
Category : Power electronics
Languages : en
Pages : 196
Book Description
A Highly Integrated Gate Driver with 100% Duty Cycle Capability and High Output Current Drive for Wide-bandgap Power Switches in Extreme Environments
Author: Robert Lee GreenwellPublisher:
ISBN:
Category :
Languages : en
Pages : 120
Book Description
High-temperature integrated circuits fill a need in applications where there are obvious benefits to reduced thermal management or where circuitry is placed away from temperature extremes. Examples of these applications include aerospace, automotive, power generation, and well-logging. This work focuses on the automotive applications, in which the growing demand for hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs), and fuel cell vehicles (FCVs) has increased the need for high-temperature electronics that can operate at the extreme ambient temperatures that exist under the hood, which can be in excess of 150°C. Silicon carbide (SiC) and other wide-bandgap power switches that can function at these temperature extremes are now entering the market. To take full advantage of their potential, high-temperature capable circuits that can also operate in these environments are required. This work presents a high-temperature, high-voltage, silicon-on-insulator (SOI) based gate driver designed for SiC and other wide-bandgap power switches for DC-DC converters and traction drives in HEVs. This highly integrated gate driver integrated circuit (IC) has been designed to operate at ambient temperatures up to 200oC, have a high on-chip drive current, require a minimum complement of off-chip components, and be capable of operating at a 100% high-side duty cycle. Successful operation of the gate driver circuit across temperature with minimal or no thermal management will help to achieve higher power-to-weight and power-to-volume ratios for the power electronics modules in HEVs and, therefore, higher efficiency.
A Wide Bandgap Silicon Carbide (SiC) Gate Driver for High Temperature, High Voltage, and High Frequency Applications
Author: Rajan Raj LamichhanePublisher:
ISBN: 9781303673061
Category : Battery chargers
Languages : en
Pages : 222
Book Description
The potential of silicon carbide (SiC) for modern power electronics applications is revolutionary because of its superior material properties including substantially better breakdown voltage, power density, device leakage, thermal conductivity, and switching speed. Integration of gate driver circuitry on the same chip, or in the same package, as the power device would significantly reduce the parasitic inductance, require far less thermal management paraphernalia, reduce cost and size of the system, and result in more efficient and reliable electrical and thermal performance of the system. The design of a gate driver circuit with good performance parameters in this completely new under-development SiC process is the key to realization of this ultimate goal of integrating a SiC gate driver with a SiC power MOSFET. The objective of this joint undertaking is integration of the designed gate driver into the electronic battery charger onboard the new plug-in hybrid Toyota Prius. The ultimate goal of the project is in-vehicle demonstration and commercialization. This high frequency charger will be five times more powerful with a 10 times size reduction and significant cost reduction on the long run. This thesis presents the design, layout, simulation, testing and verification of a gate driver circuit implemented and fabricated in the Cree SiC process. The gate driver has a rise time and fall time of 45 ns and 41 ns, respectively, when driving a SiC power MOSFET with peak current reaching around 3 A. At a switching frequency of 500 kHz, the gate driver power dissipation was around 6.5 W. The gate driver was operable over a temperature range between 25 °C and 420 °C with only slight degradation in performance parameters. This thesis will provide a comprehensive overview of gate driver design and testing phases with relevant background.
Generalized Low-Voltage Circuit Techniques for Very High-Speed Time-Interleaved Analog-to-Digital Converters
Author: Sai-Weng SinPublisher: Springer Science & Business Media
ISBN: 9048197104
Category : Technology & Engineering
Languages : en
Pages : 147
Book Description
Analog-to-Digital Converters (ADCs) play an important role in most modern signal processing and wireless communication systems where extensive signal manipulation is necessary to be performed by complicated digital signal processing (DSP) circuitry. This trend also creates the possibility of fabricating all functional blocks of a system in a single chip (System On Chip - SoC), with great reductions in cost, chip area and power consumption. However, this tendency places an increasing challenge, in terms of speed, resolution, power consumption, and noise performance, in the design of the front-end ADC which is usually the bottleneck of the whole system, especially under the unavoidable low supply-voltage imposed by technology scaling, as well as the requirement of battery operated portable devices. Generalized Low-Voltage Circuit Techniques for Very High-Speed Time-Interleaved Analog-to-Digital Converters will present new techniques tailored for low-voltage and high-speed Switched-Capacitor (SC) ADC with various design-specific considerations.
Silicon-on-Insulator Technology and Devices X
Author: Electrochemical Society. Electronics DivisionPublisher: The Electrochemical Society
ISBN: 9781566773096
Category : Technology & Engineering
Languages : en
Pages : 482
Book Description
Bipolar and MOS Analog Integrated Circuit Design
Author: Alan B. GrebenePublisher: John Wiley & Sons
ISBN: 0471430781
Category : Technology & Engineering
Languages : en
Pages : 914
Book Description
A practical, engineering book discussing the most modern and general techniques for designing analog integrated circuits which are not digital (excluding computer circuits). Covers the basics of the devices, manufacturing technology, design procedures, shortcuts, and analytic techniques. Includes examples and illustrations of the best current practice.
Design, Layout and Testing of a Silicon Carbide-based Under Voltage Lock-out Circuit
Author: Michael Dalan GloverPublisher:
ISBN: 9781303498718
Category : Integrated circuits
Languages : en
Pages : 276
Book Description
Silicon carbide-based power devices play an increasingly important role in modern power conversion systems. Finding a means to reduce the size and complexity of these systems by even incremental amounts can have a significant impact on cost and reliability. One approach to achieving this goal is the die-level integration of gate driver circuitry with the SiC power devices. Aside from cost reductions, there are significant advantages to the integration of the gate driver circuits with the power devices. By integrating the gate driver circuitry with the power devices, the parasitic inductances traditionally seen between the gate driver and the switching devices can be significantly reduced, allowing faster switching speeds, which in turn leads to higher efficiencies, less aggressive thermal management requirements, and physically smaller passives. Collaborators from Toyota, Cree, the University of Arkansas, Oak Ridge National Labs, and Arkansas Power Electronics International have designed, fabricated, and tested a custom gate driver circuit implemented in a low-voltage SiC-based process by Cree. This gate driver implementation is the first step toward the goal of a completely integrated system. One key sub-component of this gate driver is the Under Voltage Lock-Out (UVLO) circuit, which asserts a signal whenever the supply voltage to the die falls below a set threshold and allows circuitry both on- and off-chip to take steps to prevent damage to the system. The work presented herein is the design, layout, and testing of a UVLO circuit implemented in the low-voltage silicon carbide process available from Cree. The UVLO was demonstrated to operate over a temperature range between -55 °C and 300 °C. An overview of the gate driver design, the fabrication process, and the trade-offs made during the UVLO circuit design process will be presented, as well as the integrated circuit layout workflow. A synopsis of the die testing apparatus and results will also be provided.
Highly Integrated Gate Drivers for Si and GaN Power Transistors
Author: Achim SeidelPublisher: Springer
ISBN: 9783030689421
Category : Technology & Engineering
Languages : en
Pages : 124
Book Description
This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.