Author: Thomas Raymond OhnsteinPublisher:
ISBN:
Category :
Languages : en
Pages : 382
Book Description
An Investigation of Silicon Nitride on Gallium Arsenide
Author: Thomas Raymond OhnsteinPublisher:
ISBN:
Category :
Languages : en
Pages : 382
Book Description
An Experimental Study for the Characterization of Silicon Nitride Films Deposited on Gallium Arsenide Substrates by the R.f. Sputtering Technique Using MIS Structures
Author: Mustafa M. El-MuradiPublisher:
ISBN:
Category :
Languages : en
Pages : 148
Book Description
Silicon Nitride for Microelectronic Applications
Author: J. T. MilekPublisher: Springer Science & Business Media
ISBN: 1461596092
Category : Technology & Engineering
Languages : en
Pages : 124
Book Description
This survey is concerned with the use of silicon nitride in the semi conductor and microelectronics industries. The Handbook of Electronic Materials, volume 3, comprises part 1 of this survey and includes preparation and properties information. This report was prepared by Hughes Aircraft Company, Culver City, California under Contract Number F336lS-70-C-1348. The work was admini stered under the direction of the Air Force Materials Laboratory, Air Force Systems Command, Wright-Patterson Air Force Base, Ohio, with Hr. B. Emrich, Project Engineer. The Electronic Properties Information Center (EPIC) is a designated Information Analysis Center of the Department of Defense, authorized to pro vide information to the entire DoD community. The purpose of the Center is to provide a highly competent source of information and data on the electronic, optical and magnetic properties of materials of value to the Department of Defense. Its major function is to evaluate, compile and publish the experi mental data from the world's unclassified literature concerned with the properties of materials. All materials relevant to the field of electronics are within the scope of EPIC: insulators, semiconductors, metals, super conductors, ferrites, ferroelectrics, ferromagnetics, electroluminescents, thermionic emitters and optical materials. The Center's scope includes information on over 100 basic properties of materials; information generally regarded as being in the area of devices and/or circuitry is excluded. v CONTENTS Foreword. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Diffusion Mask Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . '" 11 Glass-to-Metal Seals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Passivation Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Isolation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 Memory Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 Capacitors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76 Radiation Hardening Applications . . . . . . . . . . . . . . . •. . . . . . . . .
An Investigation of Gallium Arsenide Materials and Devices Grown on Silicon Substrates
Author: Russell Jon FischerEncapsulation Studies and Planar Device Fabrication in Gallium Arsenide
Author: Max John HelixPublisher:
ISBN:
Category :
Languages : en
Pages : 172
Book Description
Low temperature photoluminescence and Auger electron spectroscopy (AES) are used to study SIO2 and Si3N4 as encapsulants for high temperature annealing of GaAs. These encapsulants are used in the fabrication of planar diodes in GaAs, and the resulting electrical and optical properties of the devices are examined. Silicon dioxide or silicon oxy-nitride layers allow the outdiffusion of Ga when they are used to encapsulate GaAs during high temperature annealing. .In contrast, silicon nitride layers which are essentially free of oxygen can be used to anneal GaAs with negligible Ga outdiffusion. A versatile rf plasma deposition system capable of depositing high quality Si3N4 films at low temperatures is described. In this system, reacting gases are introduced into the reaction chamber separately, and great care is taken to reduce residual oxygen in the system. Composition (ration of silicon to nitrogen), index of refraction, etch rate, and deposition rate are reported for films deposited under various conditions. Electrical characterization of the Si3N4 films is also presented.
Chemical Vapor Deposition of Silicon Nitride Films on Gallium Arsenide
Author: Thomas Raymond OhnsteinPublisher:
ISBN:
Category : Gallium arsenide
Languages : en
Pages : 156
Book Description
Passivation Study of Gallium Arsenide and Indium Phosphide Substrates Using Diamond-like Hydrocarbon and Silicon Nitride Films
Author: Candita Jean MeekPublisher:
ISBN:
Category : Compound semiconductors
Languages : en
Pages : 154
Book Description
Silicon Nitride-gallium Arsenide Interface
Author: John Edwin FosterPublisher:
ISBN:
Category : Silicon
Languages : en
Pages : 220
Book Description
Scientific and Technical Aerospace Reports
Author: Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 804
Book Description
Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
The Electrical Properties of the Silicon Nitride-gallium Arsenide Interface
Author: Edmond Rowan WardPublisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 142
Book Description