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Planar Double-Gate Transistor

Planar Double-Gate Transistor PDF Author: Amara Amara
Publisher: Springer Science & Business Media
ISBN: 1402093411
Category : Technology & Engineering
Languages : en
Pages : 215

Book Description
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

Planar Double-Gate Transistor

Planar Double-Gate Transistor PDF Author: Amara Amara
Publisher: Springer Science & Business Media
ISBN: 1402093411
Category : Technology & Engineering
Languages : en
Pages : 215

Book Description
Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch

MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch PDF Author: Viranjay M. Srivastava
Publisher: Springer Science & Business Media
ISBN: 3319011650
Category : Technology & Engineering
Languages : en
Pages : 209

Book Description
This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.

Spacer Engineered FinFET Architectures

Spacer Engineered FinFET Architectures PDF Author: Sudeb Dasgupta
Publisher: CRC Press
ISBN: 1351751034
Category : Technology & Engineering
Languages : en
Pages : 172

Book Description
This book focusses on the spacer engineering aspects of novel MOS-based device–circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs PDF Author: Jerry G. Fossum
Publisher: Cambridge University Press
ISBN: 1107434491
Category : Technology & Engineering
Languages : en
Pages : 227

Book Description
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

Design and Development of Efficient Energy Systems

Design and Development of Efficient Energy Systems PDF Author: Suman Lata Tripathi
Publisher: John Wiley & Sons
ISBN: 1119761778
Category : Computers
Languages : en
Pages : 384

Book Description
There is not a single industry which will not be transformed by machine learning and Internet of Things (IoT). IoT and machine learning have altogether changed the technological scenario by letting the user monitor and control things based on the prediction made by machine learning algorithms. There has been substantial progress in the usage of platforms, technologies and applications that are based on these technologies. These breakthrough technologies affect not just the software perspective of the industry, but they cut across areas like smart cities, smart healthcare, smart retail, smart monitoring, control, and others. Because of these “game changers,” governments, along with top companies around the world, are investing heavily in its research and development. Keeping pace with the latest trends, endless research, and new developments is paramount to innovate systems that are not only user-friendly but also speak to the growing needs and demands of society. This volume is focused on saving energy at different levels of design and automation including the concept of machine learning automation and prediction modeling. It also deals with the design and analysis for IoT-enabled systems including energy saving aspects at different level of operation. The editors and contributors also cover the fundamental concepts of IoT and machine learning, including the latest research, technological developments, and practical applications. Valuable as a learning tool for beginners in this area as well as a daily reference for engineers and scientists working in the area of IoT and machine technology, this is a must-have for any library.

Proceedings

Proceedings PDF Author:
Publisher:
ISBN:
Category : Low voltage integrated circuits
Languages : en
Pages : 428

Book Description


Electrical & Electronics Abstracts

Electrical & Electronics Abstracts PDF Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1904

Book Description


Design based Research

Design based Research PDF Author: Kirat Pal SIngh
Publisher: Self
ISBN:
Category :
Languages : en
Pages : 282

Book Description
Author Impact

FinFETs and Other Multi-Gate Transistors

FinFETs and Other Multi-Gate Transistors PDF Author: J.-P. Colinge
Publisher: Springer Science & Business Media
ISBN: 038771751X
Category : Technology & Engineering
Languages : en
Pages : 350

Book Description
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design PDF Author: Chenming Hu
Publisher: Woodhead Publishing
ISBN: 9780081024010
Category : Technology & Engineering
Languages : en
Pages : 0

Book Description
Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.