Author: Wei Fan (Ph. D.) Publisher: ISBN: Category : Languages : en Pages : 225
Book Description
Planarization processes are a key enabling technology for continued performance and density improvements in integrated circuits (ICs). Dielectric material planarization is widely used in front-end-of-line (FEOL) processing for device isolation and in back-end-of-line (BEOL) processing for interconnection. This thesis studies the physical mechanisms and variations in the planarization using chemical mechanical polishing (CMP). The major achievement and contribution of this work is a systematic methodology to physically model and characterize the non-uniformities in the CMP process. To characterize polishing mechanisms at different length scales, physical CMP models are developed in three levels: wafer-level, die-level and particle-level. The wafer-level model investigates the CMP tool effects on wafer-level pressure non-uniformity. The die-level model is developed to study chip-scale non-uniformity induced by layout pattern density dependence and CMP pad properties. The particle-level model focuses on the contact mechanism between pad asperities and the wafer. Two model integration approaches are proposed to connect wafer-level and particle-level models to the die-level model, so that CMP system impacts on die-level uniformity and feature size dependence are considered. The models are applied to characterize and simulate CMP processes by fitting polishing experiment data and extracting physical model parameters. A series of physical measurement approaches are developed to characterize CMP pad properties and verify physical model assumptions. Pad asperity modulus and characteristic asperity height are measured by nanoindentation and microprofilometry, respectively. Pad aging effect is investigated by comparing physical measurement results at different pad usage stages. Results show that in-situ conditioning keeps pad surface properties consistent to perform polishing up to 16 hours, even in the face of substantial pad wear during extended polishing. The CMP mechanisms identified from modeling and physical characterization are applied to explore an alternative polishing process, referred to as pad-in-a-bottle (PIB). A critical challenge related to applied pressure using pad-in-a-bottle polishing is predicted.
Author: Babu Suryadevara Publisher: Woodhead Publishing ISBN: 0128218193 Category : Technology & Engineering Languages : en Pages : 650
Book Description
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Author: Jianfeng Luo Publisher: Springer Science & Business Media ISBN: 3662079283 Category : Science Languages : en Pages : 327
Book Description
Chemical mechanical planarization, or chemical mechanical polishing as it is simultaneously referred to, has emerged as one of the critical processes in semiconductor manufacturing and in the production of other related products and devices, MEMS for example. Since its introduction some 15+ years ago CMP, as it is commonly called, has moved steadily into new and challenging areas of semiconductor fabrication. Demands on it for consistent, efficient and cost-effective processing have been steady. This has continued in the face of steadily decreasing feature sizes, impressive increases in wafer size and a continuing array of new materials used in devices today. There are a number of excellent existing references and monographs on CMP in circulation and we defer to them for detailed background information. They are cited in the text. Our focus here is on the important area of process mod els which have not kept pace with the tremendous expansion of applications of CMP. Preston's equation is a valuable start but represents none of the subtleties of the process. Specifically, we refer to the development of models with sufficient detail to allow the evaluation and tradeoff of process inputs and parameters to assess impact on quality or quantity of production. We call that an "integrated model" and, more specifically, we include the important role of the mechanical elements of the process.
Author: Sutee Eamkajornsiri Publisher: ISBN: Category : Languages : en Pages : 298
Book Description
Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. High and reliable wafer yield is critical in the CMP process; it is dependent upon uniformity of material removal rate across the entire wafer. The focus on this research is the development of control algorithm for CMP process. Wafer-scale and die-scale models are the two scales used in this study. To achieve improvement in wafer yield, three control strategies are formulated with greedy algorithm, method heuristic and non-linear programming in this wafer-scale. The simulation results show that average wafer yield from genetic algorithm is improved, compared to greedy algorithm. Moreover, average wafer yield from non-linear programming is also improved, compared to greedy algorithm. At die-scale, a comprehensive control algorithm is developed based on the MRR equations with interface pressure as a control parameter. The interface pressure is varied spatially and/or temporally across the die. In this concept, three control strategies are developed and studied. The strategies are included spatial pressure control, spatial and temporal pressure control, and look-ahead scheduled pressure control. The simulation results of these three strategies show improvement in the upper surface uniformity; however, look-ahead scheduled pressure control seems to be the promising algorithm.
Author: Robert Leon Opila Publisher: The Electrochemical Society ISBN: 9781566772600 Category : Technology & Engineering Languages : en Pages : 664
Book Description
This volume contains the proceedings of the third international symposium on Chemical Mechanical Planarization integrated circuit device manufacturing held at the 196th Meeting of the Electrochemical Society in Honolulu, Hawaii. ( October 20 -22 1999).
Author: Duane S. Boning Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 376
Book Description
Chemical-mechanical planarization (CMP) has emerged as a critical fabrication technology for advanced integrated circuits. Even as the applications of CMP have diversified and we have begun to understand aspects of the physics and chemistry of the process, a new generation of CMP innovations is unfolding. New slurries and consumables are under development. New applications to novel devices continue to appear. This book, the most recent in a successful series on CMP, offers a review of the advances to date and provides a comprehensive discussion of the future challenges that must be overcome. Presentations from academia, government labs and industry are featured. Topics include; CMP modeling; CMP science; CMP slurries and particles for planarization of copper, oxide, and other materials; planarization applications including shallow trench isolation (STI), copper damascene, and novel devices and CMP integration.
Author: Yuzhuo Li Publisher: John Wiley & Sons ISBN: 9780470180891 Category : Technology & Engineering Languages : en Pages : 760
Book Description
An authoritative, systematic, and comprehensive description of current CMP technology Chemical Mechanical Planarization (CMP) provides the greatest degree of planarization of any known technique. The current standard for integrated circuit (IC) planarization, CMP is playing an increasingly important role in other related applications such as microelectromechanical systems (MEMS) and computer hard drive manufacturing. This reference focuses on the chemical aspects of the technology and includes contributions from the foremost experts on specific applications. After a detailed overview of the fundamentals and basic science of CMP, Microelectronic Applications of Chemical Mechanical Planarization: * Provides in-depth coverage of a wide range of state-of-the-art technologies and applications * Presents information on new designs, capabilities, and emerging technologies, including topics like CMP with nanomaterials and 3D chips * Discusses different types of CMP tools, pads for IC CMP, modeling, and the applicability of tribometrology to various aspects of CMP * Covers nanotopography, CMP performance and defect profiles, CMP waste treatment, and the chemistry and colloidal properties of the slurries used in CMP * Provides a perspective on the opportunities and challenges of the next fifteen years Complete with case studies, this is a valuable, hands-on resource for professionals, including process engineers, equipment engineers, formulation chemists, IC manufacturers, and others. With systematic organization and questions at the end of each chapter to facilitate learning, it is an ideal introduction to CMP and an excellent text for students in advanced graduate courses that cover CMP or related semiconductor manufacturing processes.
Author: James D. Plummer Publisher: Cambridge University Press ISBN: 1009303570 Category : Technology & Engineering Languages : en Pages : 680
Book Description
Master fundamental technologies for modern semiconductor integrated circuits with this definitive textbook, for students from a range of STEM backgrounds, with a focus on big-picture thinking and industry-grade simulation. Includes over 450 full-color figures and over 280 homework problems, with solutions and lecture slides for instructors.
Author: Joseph M. Steigerwald Publisher: John Wiley & Sons ISBN: 3527617752 Category : Science Languages : en Pages : 337
Book Description
Chemical Mechanical Planarization (CMP) plays an important role in today's microelectronics industry. With its ability to achieve global planarization, its universality (material insensitivity), its applicability to multimaterial surfaces, and its relative cost-effectiveness, CMP is the ideal planarizing medium for the interlayered dielectrics and metal films used in silicon integrated circuit fabrication. But although the past decade has seen unprecedented research and development into CMP, there has been no single-source reference to this rapidly emerging technology-until now. Chemical Mechanical Planarization of Microelectronic Materials provides engineers and scientists working in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP. Authors Steigerwald, Murarka, and Gutmann-all leading CMP pioneers-provide a historical overview of CMP, explain the various chemical and mechanical concepts involved, describe CMP materials and processes, review the latest scientific data on CMP worldwide, and offer examples of its uses in the microelectronics industry. They provide detailed coverage of the CMP of various materials used in the making of microcircuitry: tungsten, aluminum, copper, polysilicon, and various dielectric materials, including polymers. The concluding chapter describes post-CMP cleaning techniques, and most chapters feature problem sets to assist readers in developing a more practical understanding of CMP. The only comprehensive reference to one of the fastest growing integrated circuit manufacturing technologies, Chemical Mechanical Planarization of Microelectronic Materials is an important resource for research scientists and engineers working in the microelectronics industry. An indispensable resource for scientists and engineers working in the microelectronics industry Chemical Mechanical Planarization of Microelectronic Materials is the only comprehensive single-source reference to one of the fastest growing integrated circuit manufacturing technologies. It provides engineers and scientists who work in the microelectronics industry with unified coverage of both the fundamental mechanisms and engineering applications of CMP, including: * The history of CMP * Chemical and mechanical underpinnings of CMP * CMP materials and processes * Applications of CMP in the microelectronics industry * The CMP of tungsten, aluminum, copper, polysilicon, and various dielectrics, including polymers used in integrated circuit fabrication * Post-CMP cleaning techniques * Chapter-end problem sets are also included to assist readers in developing a practical understanding of CMP.
Author: Wei Fan (Ph. D.)
Author: Babu Suryadevara
Author: Jianfeng Luo
Author: Sutee Eamkajornsiri
Author: Robert Leon Opila
Author: Duane S. Boning
Author: Yuzhuo Li
Author: James D. Plummer
Author: Joseph M. Steigerwald
Author: