Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2092
Book Description
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2092
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 2092
Book Description
Handbook for III-V High Electron Mobility Transistor Technologies
Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Publisher: CRC Press
ISBN: 0429862520
Category : Science
Languages : en
Pages : 434
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Millimeter-Wave Antennas: Configurations and Applications
Author: Jaco du Preez
Publisher: Springer
ISBN: 3319350684
Category : Technology & Engineering
Languages : en
Pages : 165
Book Description
This book comprehensively reviews the state of the art in millimeter-wave antennas, traces important recent developments and provides information on a wide range of antenna configurations and applications. While fundamental theoretical aspects are discussed whenever necessary, the book primarily focuses on design principles and concepts, manufacture, measurement techniques, and practical results. Each of the various antenna types scalable to millimeter-wave dimensions is considered individually, with coverage of leaky-wave and surface-wave antennas, printed antennas, integrated antennas, and reflector and lens systems. The final two chapters address the subject from a systems perspective, providing an overview of supporting circuitry and examining in detail diverse millimeter-wave applications, including high-speed wireless communications, radio astronomy, and radar. The vast amount of information now available on millimeter-wave systems can be daunting for researchers and designers entering the field. This book offers readers essential guidance, helping them to gain a thorough understanding based on the most recent research findings and serving as a sound basis for informed decision-making.
Publisher: Springer
ISBN: 3319350684
Category : Technology & Engineering
Languages : en
Pages : 165
Book Description
This book comprehensively reviews the state of the art in millimeter-wave antennas, traces important recent developments and provides information on a wide range of antenna configurations and applications. While fundamental theoretical aspects are discussed whenever necessary, the book primarily focuses on design principles and concepts, manufacture, measurement techniques, and practical results. Each of the various antenna types scalable to millimeter-wave dimensions is considered individually, with coverage of leaky-wave and surface-wave antennas, printed antennas, integrated antennas, and reflector and lens systems. The final two chapters address the subject from a systems perspective, providing an overview of supporting circuitry and examining in detail diverse millimeter-wave applications, including high-speed wireless communications, radio astronomy, and radar. The vast amount of information now available on millimeter-wave systems can be daunting for researchers and designers entering the field. This book offers readers essential guidance, helping them to gain a thorough understanding based on the most recent research findings and serving as a sound basis for informed decision-making.
Wide Bandgap Based Devices
Author: Farid Medjdoub
Publisher: MDPI
ISBN: 3036505660
Category : Technology & Engineering
Languages : en
Pages : 242
Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Publisher: MDPI
ISBN: 3036505660
Category : Technology & Engineering
Languages : en
Pages : 242
Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Millimeter-Wave Power Amplifiers
Author: Jaco du Preez
Publisher: Springer
ISBN: 3319621661
Category : Technology & Engineering
Languages : en
Pages : 367
Book Description
This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.
Publisher: Springer
ISBN: 3319621661
Category : Technology & Engineering
Languages : en
Pages : 367
Book Description
This book provides a detailed review of millimeter-wave power amplifiers, discussing design issues and performance limitations commonly encountered in light of the latest research. Power amplifiers, which are able to provide high levels of output power and linearity while being easily integrated with surrounding circuitry, are a crucial component in wireless microwave systems. The book is divided into three parts, the first of which introduces readers to mm-wave wireless systems and power amplifiers. In turn, the second focuses on design principles and EDA concepts, while the third discusses future trends in power amplifier research. The book provides essential information on mm-wave power amplifier theory, as well as the implementation options and technologies involved in their effective design, equipping researchers, circuit designers and practicing engineers to design, model, analyze, test and implement high-performance, spectrally clean and energy-efficient mm-wave systems.
Handbook of RF and Microwave Power Amplifiers
Author: John L. B. Walker
Publisher: Cambridge University Press
ISBN: 0521760100
Category : Technology & Engineering
Languages : en
Pages : 705
Book Description
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Publisher: Cambridge University Press
ISBN: 0521760100
Category : Technology & Engineering
Languages : en
Pages : 705
Book Description
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Broadband RF and Microwave Amplifiers
Author: Andrei Grebennikov
Publisher: CRC Press
ISBN: 1466557397
Category : Computers
Languages : en
Pages : 750
Book Description
Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then: Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.
Publisher: CRC Press
ISBN: 1466557397
Category : Computers
Languages : en
Pages : 750
Book Description
Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then: Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.
Handbook of Terahertz Technologies
Author: Ho-Jin Song
Publisher: CRC Press
ISBN: 9814613096
Category : Science
Languages : en
Pages : 606
Book Description
Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been investigated in a few limited fields, such as astronomy, because of a lack of devices for their generation and detection. Several technical breakthroughs made over the last couple of decades now allow us to radiate and detect terahertz waves more easily, which has trigg
Publisher: CRC Press
ISBN: 9814613096
Category : Science
Languages : en
Pages : 606
Book Description
Terahertz waves, which lie in the frequency range of 0.1-10 THz, have long been investigated in a few limited fields, such as astronomy, because of a lack of devices for their generation and detection. Several technical breakthroughs made over the last couple of decades now allow us to radiate and detect terahertz waves more easily, which has trigg
Terahertz Sources and Systems
Author: R.E. Miles
Publisher: Springer Science & Business Media
ISBN: 9780792370963
Category : Medical
Languages : en
Pages : 376
Book Description
Proceedings of the NATO Advanced Research Workshop, Château de Bonas, France, 22-27 June 2000
Publisher: Springer Science & Business Media
ISBN: 9780792370963
Category : Medical
Languages : en
Pages : 376
Book Description
Proceedings of the NATO Advanced Research Workshop, Château de Bonas, France, 22-27 June 2000
THz Communications
Author: Thomas Kürner
Publisher: Springer Nature
ISBN: 3030737381
Category : Science
Languages : en
Pages : 510
Book Description
This book describes the fundamentals of THz communications, spanning the whole range of applications, propagation and channel models, RF transceiver technology, antennas, baseband techniques, and networking interfaces. The requested data rate in wireless communications will soon reach from 100 Gbit/s up to 1 Tbps necessitating systems with ultra-high bandwidths of several 10s of GHz which are available only above 200 GHz. In the last decade, research at these frequency bands has made significant progress, enabling mature experimental demonstrations of so-called THz communications, which are thus expected to play a vital role in future wireless networks. In addition to chapters by leading experts on the theory, modeling, and implementation of THz communication technology, the book also features the latest experimental results and addresses standardization and regulatory aspects. This book will be of interest to both academic researchers and engineers in the telecommunications industry.
Publisher: Springer Nature
ISBN: 3030737381
Category : Science
Languages : en
Pages : 510
Book Description
This book describes the fundamentals of THz communications, spanning the whole range of applications, propagation and channel models, RF transceiver technology, antennas, baseband techniques, and networking interfaces. The requested data rate in wireless communications will soon reach from 100 Gbit/s up to 1 Tbps necessitating systems with ultra-high bandwidths of several 10s of GHz which are available only above 200 GHz. In the last decade, research at these frequency bands has made significant progress, enabling mature experimental demonstrations of so-called THz communications, which are thus expected to play a vital role in future wireless networks. In addition to chapters by leading experts on the theory, modeling, and implementation of THz communication technology, the book also features the latest experimental results and addresses standardization and regulatory aspects. This book will be of interest to both academic researchers and engineers in the telecommunications industry.