Author: Changyi Zhao
Publisher:
ISBN:
Category : Cyclotron resonance
Languages : en
Pages : 388
Book Description
A Study of Si/SiO2 Interface Roughness Evolution During Microwave Electron Cyclotron Resonance Plasma and Thermal Oxidation Processes
Author: Changyi Zhao
Publisher:
ISBN:
Category : Cyclotron resonance
Languages : en
Pages : 388
Book Description
Publisher:
ISBN:
Category : Cyclotron resonance
Languages : en
Pages : 388
Book Description
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Author: B.E. Deal
Publisher: Springer Science & Business Media
ISBN: 1489915885
Category : Science
Languages : en
Pages : 505
Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Publisher: Springer Science & Business Media
ISBN: 1489915885
Category : Science
Languages : en
Pages : 505
Book Description
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996
Author: Hisham Z. Massoud
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 804
Book Description
Publisher:
ISBN:
Category : Science
Languages : en
Pages : 804
Book Description
American Doctoral Dissertations
Author:
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 806
Book Description
Publisher:
ISBN:
Category : Dissertation abstracts
Languages : en
Pages : 806
Book Description
Ceramic Abstracts
Author: American Ceramic Society
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1000
Book Description
Publisher:
ISBN:
Category : Ceramics
Languages : en
Pages : 1000
Book Description
Structural and Electrical Investigation of the Si-SiO2 Interface in Thermally Oxidized Silicon
Author: B. E. Deal
Publisher:
ISBN:
Category :
Languages : en
Pages : 47
Book Description
The dependence of fixed oxide charge density (Q sub ss)/q), interface state density (N sub st), and electron spin resonance P sub b signals on thermal oxidation process variables as well as their interrelationship has been investigated. Both n- and p-type silicon substrates having (111) and (100) orientation were employed in this study. Measurement techniques included conventional 1 MHz capacitance-voltage (C-V) analysis, quasistatic C-V analysis, and electron spin resonance. The oxide charges resulting from postoxidation in situ anneal in nitrogen were found to be similar in nature and magnitude to those obtained following a similar treatment in argon. Some reduction in N sub st was observed for thicker oxides following a post-metallization H2 anneal. Strong evidence is obtained for a proportionality between ESR signals and interface states density with varying process parameters modifying the P sub b to N sub st relationship. The effects of iron ion implantation (before or after oxidation) on oxide charges and P sub b signals has also been investigated. This work, in addition to clarifying the relationship between fixed oxide charges, interface states, and ESR P sub b signals, demonstrates the significance of ESR as a tool in the characterization of the Si-SiO2 system. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 47
Book Description
The dependence of fixed oxide charge density (Q sub ss)/q), interface state density (N sub st), and electron spin resonance P sub b signals on thermal oxidation process variables as well as their interrelationship has been investigated. Both n- and p-type silicon substrates having (111) and (100) orientation were employed in this study. Measurement techniques included conventional 1 MHz capacitance-voltage (C-V) analysis, quasistatic C-V analysis, and electron spin resonance. The oxide charges resulting from postoxidation in situ anneal in nitrogen were found to be similar in nature and magnitude to those obtained following a similar treatment in argon. Some reduction in N sub st was observed for thicker oxides following a post-metallization H2 anneal. Strong evidence is obtained for a proportionality between ESR signals and interface states density with varying process parameters modifying the P sub b to N sub st relationship. The effects of iron ion implantation (before or after oxidation) on oxide charges and P sub b signals has also been investigated. This work, in addition to clarifying the relationship between fixed oxide charges, interface states, and ESR P sub b signals, demonstrates the significance of ESR as a tool in the characterization of the Si-SiO2 system. (Author).
Influence of Oxidation Parameters on Roughness at the Si-SiO2 Interface
Author: M. Henzler
Publisher:
ISBN:
Category :
Languages : en
Pages : 48
Book Description
The roughness at the interface Si-SiO2 has been determined on an atomic scale after removal of the oxide by LEED (Low Energy Electron Diffraction). The energy dependent broadening of the diffracted electron beams yields the average size of step free terraces. Silicon (111) samples have been oxidized under various conditions concerning atmosphere (dry and wet oxygen), temperature (800 C and 1000 C), time pretreatment and posttreatment. The oxidation process produces a roughness, which may be decreased by low oxidation rates and appropriate annealing in non-oxidizing atmosphere. The novel technique of evaluation for the first time shows systematically, how oxidation parameters determine the roughness at the interface, which again is important for the performance of MOS-devices. (Author).
Publisher:
ISBN:
Category :
Languages : en
Pages : 48
Book Description
The roughness at the interface Si-SiO2 has been determined on an atomic scale after removal of the oxide by LEED (Low Energy Electron Diffraction). The energy dependent broadening of the diffracted electron beams yields the average size of step free terraces. Silicon (111) samples have been oxidized under various conditions concerning atmosphere (dry and wet oxygen), temperature (800 C and 1000 C), time pretreatment and posttreatment. The oxidation process produces a roughness, which may be decreased by low oxidation rates and appropriate annealing in non-oxidizing atmosphere. The novel technique of evaluation for the first time shows systematically, how oxidation parameters determine the roughness at the interface, which again is important for the performance of MOS-devices. (Author).
The Si-SiO2 System
Author: P. Balk
Publisher: Elsevier Publishing Company
ISBN:
Category : Science
Languages : en
Pages : 376
Book Description
The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Publisher: Elsevier Publishing Company
ISBN:
Category : Science
Languages : en
Pages : 376
Book Description
The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Electrical & Electronics Abstracts
Author:
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1948
Book Description
Publisher:
ISBN:
Category : Electrical engineering
Languages : en
Pages : 1948
Book Description