A Study of Metal Oxide Semiconductor Capacitors when Subjected to Illumination

A Study of Metal Oxide Semiconductor Capacitors when Subjected to Illumination PDF Author: Ellidus Anno Allan Haan
Publisher:
ISBN:
Category :
Languages : en
Pages : 226

Book Description

Experimental Study of Metal-oxide-semiconductor Capacitors

Experimental Study of Metal-oxide-semiconductor Capacitors PDF Author: Karl Harry Zaininger
Publisher:
ISBN:
Category : Metal oxide semiconductors
Languages : en
Pages : 312

Book Description

Further Investigation of the Large Signal Behavior of Metal Oxide Semiconductor Capacitors

Further Investigation of the Large Signal Behavior of Metal Oxide Semiconductor Capacitors PDF Author: Cecil Tzechor Ho
Publisher:
ISBN:
Category :
Languages : en
Pages : 76

Book Description

Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors

Influence of Impurity-Decorated Stacking Faults on the Transient Response of Metal Oxide Semiconductor Capacitors PDF Author: Y. Ichida
Publisher:
ISBN:
Category : Electrical activity
Languages : en
Pages : 12

Book Description
The gettering effect of phosphorus diffusion to the back surface of a silicon wafer on oxidation-induced stacking faults has been studied by evaluating the generation lifetime from the transient response of metal oxide semiconductor (MOS) capacitors. The generation lifetime of wafers subjected to postoxidation phosphorus diffusion gettering is not remarkably decreased by the presence of stacking faults. On the other hand, the generation lifetime of waters subjected to preoxidation gettering is decreased by two orders of magnitude because of the presence of stacking faults. The result is explained by impurity precipitation to Frank partial dislocations bounding stacking faults.

Theory of Metal Oxide Semiconductor Capacitor

Theory of Metal Oxide Semiconductor Capacitor PDF Author: C. T. Sah
Publisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 139

Book Description

Canadian Theses

Canadian Theses PDF Author:
Publisher:
ISBN:
Category : Dissertations, Academic
Languages : en
Pages : 436

Book Description

The Study of Metal-oxide-semiconductor Capacitors on 6H[alpha]-silicon Carbide Semiconducting Material

The Study of Metal-oxide-semiconductor Capacitors on 6H[alpha]-silicon Carbide Semiconducting Material PDF Author: Richard Charles Allen Harris
Publisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 258

Book Description

The Study of Metal-oxide-semiconductor Capacitors on 6Hα-silicon Carbide Semiconducting Material

The Study of Metal-oxide-semiconductor Capacitors on 6Hα-silicon Carbide Semiconducting Material PDF Author: Richard Charles Allen Harris
Publisher:
ISBN:
Category : Silicon carbide
Languages : en
Pages : 258

Book Description

An Investigation of Metal- Oxide-semiconductor Capacitors

An Investigation of Metal- Oxide-semiconductor Capacitors PDF Author: Richard Albert Strom
Publisher:
ISBN:
Category : Capacitors
Languages : en
Pages : 142

Book Description

Electrical Transport in Metal-Oxide-Semiconductor Capacitors

Electrical Transport in Metal-Oxide-Semiconductor Capacitors PDF Author:
Publisher:
ISBN:
Category :
Languages : en
Pages :

Book Description
The current transport mechanisms in metal-oxide-semiconductor (MOS) capacitors have been studied. The devices used in this study have characterized by current-voltage analyses. Physical parameter extractions and computer generated fit methods have been applied to experimental data. Two devices have been investigated: A relatively thick oxide (125 nm) and an ultra-thin oxide (3 nm) MOS structures. The voltage and temperature dependence of these devices have been explained by using present current transport models.
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