Author: Srikanth Movva Publisher: ISBN: Category : Languages : en Pages : 53
Book Description
This project involves in determining the frequency response considering the effect of transconductance and gate capacitance by developing an analytical model of Silicon Carbide (SiC) MESFETs device. The dispersion characteristics are observed to be dependent on bulk traps effects. I-V characteristics of SiC MESFET have been evaluated to determine the power-aided efficiency and switching performance from the linearity and linearity behaviors of drain current. The significant change of drain current, transconductance and gate-source capacitance have been observed due to the bulk traps effects on charge carrier reflecting GHz frequency performance of SiC MESFET device. The results of device performance simulated by MatLab tool have been described chronologically in the result and discussion chapter.
Author: Bodhisattwa Samanta Publisher: ISBN: Category : Diodes, Schottky-barrier Languages : en Pages : 38
Book Description
In this paper, the author presents a physics based analytical modeling and simulation of ion implanted silicon carbide Schottky gate FET. The model has been developed to compute the drain-source current, intrinsic parameters such as, gate capacitances, drain-source resistance and transconductance taking into account of different fabrication parameters such as doping concentration of active channel, doping constant, mobility, the correlation between active channel depth and pinch off voltage and other physical parameters. The physics based analytical model for a non self-aligned SiC MESFET shows different intrinsic and extrinsic parameters reflecting the microwave frequency applications.
Author: Kiran Kumar Rambappagari Publisher: ISBN: Category : Metal semiconductor field-effect transistors Languages : en Pages : 48
Book Description
In this project, a physics-based analytical model for silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been developed and presented. The gate capacitances such as gate-source capacitance and gate-drain capacitance were determined by considering various terminal charges with respect to the voltages at source, drain, and gate. The gate capacitance has been determined for linear and non-linear regions. This study is extremely valuable for SiC MESFETs to find their cut-off and maximum frequencies from the gate capacitance model. The gate-source and gate-drain capacitances show extremely attractive values, justifying the use of SiC MESFET as a high frequency device.
Author: Sai Neeraj Kandoori Publisher: ISBN: Category : Languages : en Pages : 66
Book Description
The main objective of this project is to develop a physics based analytical model of Gallium Nitride (GaN) MESFETs device to determine the frequency response under the influence of a trap center in the interface of channel and substrate. The frequency response has been determined by evaluating the channel current, trans conductance, gate-source capacitance and gate-drain capacitance with/without the trap center effect. The research work has been executed by Matlab and the channel current has been evaluated by merging linear and non-linear regions to show the properties of trap effect on I-V characteristics. The effect of the traps center is extremely important for wide bandgap semiconductors due to the non-maturity of the material.
Author: Ravi Teja Reddy Garugu Publisher: ISBN: Category : Languages : en Pages : 50
Book Description
A physics based analytical modeling of SiC MESFET has been presented in this grad thesis to evaluate I-V characteristics, and transconductance under traps effects. The impact of grad thesis is to show the traps effects on different electrical parameter because the SiC material is still having adequate defects during growth, which promotes the trap center to degrade the device performance. The traps centers have been considered with different electronic capture cross-section in traps energy level. The drain currents for various gate-source voltage shows significant effect due traps effects, However, I-V characteristics shows a sharp view of linear and non-linear behavior of drain current, which shows no significant effects on switching properties due to the influence of trap centers. Similarly, the transconductance shows significant effect due to traps. The transconductance has been determined for different active channel thickness to study the device performance for power aided efficiency.
Author: Rishitej Reddy Byravarapu Publisher: ISBN: Category : Languages : en Pages : 66
Book Description
An analytical model of silicon carbide based MESFET has been developed to evaluate the frequency response from an intensive study of the I-V characteristics and intrinsic parameters. The I-V characteristics have been determined by the channel charge in the linear and non-linear regimes. The transconductance has been computed in the saturation region to determine its properties contributing to the cut-off frequency response. The gate-source capacitance and gate-drain capacitance under saturation condition have been calculated in the frame of this model. The cut off frequency has been evaluated by using the transconductance and gate capacitance and the anticipated cut-off frequency is expected to obtain in the order of GHz range due the properties of wide bandgap semiconductor.
Author: Sankha S. Mukherjee Publisher: ISBN: Category : Metal semiconductor field-effect transistors Languages : en Pages : 206
Book Description
"A physics-based analytical model of the SiC MESFET incorporating trapping and thermal effects is reported. The model takes into account the field and temperature dependencies of carrier transport parameters and carrier trapping effects. Both surface and substrate traps have been incorporated in the model to calculate the observed current slump in the I-V characteristics. The trapping and detrapping from surface traps control the channel opening at the drain end of the channel that requires the drain resistance to be gate and drain voltage dependent. The substrate traps capture channel electrons at high drain bias when the buffer layer is fully depleted resulting in current collapse at low drain bias in the following I-V trace. The detrapping of the captured electrons is initiated with the increasing drain bias and the channel electron concentration increases which is accelerated by increased thermal effects. As a result, restoration of collapsed drain current is obtained before the trapping effect is reinitiated at high drain bias. The calculated results using the current model are in good agreement with experimental data. A small-signal model for the MESFET has also been proposed. Calculations for the output conductance, the transconductance, the gate-source and gate-drain capacitance has also been presented"--Abstract.
Author: Srikanth Veesam Publisher: ISBN: Category : Languages : en Pages : 69
Book Description
Preceding a couple of years, a lot of work has been done for wide band gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Silicon Carbide (SiC) as a wide band gap material is used in many applications due to its high temperature, high breakdown field, higher power and high saturation velocity. The main objective of this graduate project is to study the electrical parameters extracted from analytical model. In order to develop an accurate modeling of 4H-SiC MESFET, the drain current has been evaluated for linear and non-linear regimes to obtain the I-V characteristics. The linear and non-linear regimes in the I-V characteristics increase the accuracy of the model for any short channel FET device. The transfer characteristics has been evaluated to determine the threshold voltage confirming the depletion mode. The spectral power density has been evaluated to find the influence of the spectral power density on frequency response of 4H-SiC MESFET, which is a vital study to determine the power aided efficiency (PAE). The characteristics of spectral power density and cut-off frequency determine the device performance for maximum power output and maximum frequency performance are elucidated in the spectral power density plot.
Author: Bhavik Patel Publisher: ISBN: Category : Languages : en Pages : 81
Book Description
In this project, the explanation of analytical modeling of ion implanted silicon carbide (SiC) metal semiconductor field effect transistors (MESFETs) has been described. This model has been designed to determine the drain-source current, threshold voltage, intrinsic parameters such as gate capacitance, transconductance and, drain-source resistance bearing in mind different fabrication parameters such as annealing, ion energy, ion dose, and ion range. The model helps in getting the ion implantation fabrication parameters using the optimization of the effective implanted channel thickness for different ion doses arising to the preferred pitch off voltage for high breakdown voltage and high drain current. A study on gate-to-drain and gate-to-source capacitance, drain-source resistance and transconductance was done to determine the device frequency response.
Author: Srikanth Movva
Author: Bodhisattwa Samanta
Author: Kiran Kumar Rambappagari
Author: Sai Neeraj Kandoori
Author: Ravi Teja Reddy Garugu
Author: Rishitej Reddy Byravarapu
Author: Sankha S. Mukherjee
Author: Srikanth Veesam
Author: Bhavik Patel
Author: Endalkachew Shewarega Mengistu