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Author: D. Nirmal Publisher: CRC Press ISBN: 0429862520 Category : Science Languages : en Pages : 434
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: D. Nirmal Publisher: CRC Press ISBN: 0429862520 Category : Science Languages : en Pages : 434
Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author: Clive Poole Publisher: Academic Press ISBN: 0124079377 Category : Technology & Engineering Languages : en Pages : 668
Book Description
This book teaches the skills and knowledge required by today's RF and microwave engineer in a concise, structured and systematic way. Reflecting modern developments in the field, this book focuses on active circuit design covering the latest devices and design techniques. From electromagnetic and transmission line theory and S-parameters through to amplifier and oscillator design, techniques for low noise and broadband design; This book focuses on analysis and design including up to date material on MMIC design techniques. With this book you will: - Learn the basics of RF and microwave circuit analysis and design, with an emphasis on active circuits, and become familiar with the operating principles of the most common active system building blocks such as amplifiers, oscillators and mixers - Be able to design transistor-based amplifiers, oscillators and mixers by means of basic design methodologies - Be able to apply established graphical design tools, such as the Smith chart and feedback mappings, to the design RF and microwave active circuits - Acquire a set of basic design skills and useful tools that can be employed without recourse to complex computer aided design - Structured in the form of modular chapters, each covering a specific topic in a concise form suitable for delivery in a single lecture - Emphasis on clear explanation and a step-by-step approach that aims to help students to easily grasp complex concepts - Contains tutorial questions and problems allowing readers to test their knowledge - An accompanying website containing supporting material in the form of slides and software (MATLAB) listings - Unique material on negative resistance oscillator design, noise analysis and three-port design techniques - Covers the latest developments in microwave active circuit design with new approaches that are not covered elsewhere
Author: Ming Liu Publisher: John Wiley & Sons ISBN: 3527803696 Category : Science Languages : en Pages : 335
Book Description
Written by well-known experts in the field, this first systematic overview of multiferroic heterostructures summarizes the latest developments, first presenting the fundamental mechanisms, including multiferroic materials synthesis, structures and mechanisms, before going on to look at device applications. The resulting text offers insight and understanding for scientists and students new to this area.
Author: Mladen Božanić Publisher: Springer ISBN: 3030146901 Category : Technology & Engineering Languages : en Pages : 288
Book Description
This book provides a system-level approach to making packaging decisions for millimeter-wave transceivers. In electronics, the packaging forms a bridge between the integrated circuit or individual device and the rest of the electronic system, encompassing all technologies between the two. To be able to make well-founded packaging decisions, researchers need to understand a broad range of aspects, including: concepts of transmission bands, antennas and propagation, integrated and discrete package substrates, materials and technologies, interconnects, passive and active components, as well as the advantages and disadvantages of various packages and packaging approaches, and package-level modeling and simulation. Packaging also needs to be considered in terms of system-level testing, as well as associated testing and production costs, and reducing costs. This peer-reviewed work contributes to the extant scholarly literature by addressing the aforementioned concepts and applying them to the context of the millimeter-wave regime and the unique opportunities that this transmission approach offers.
Author: Muhammad M. Hussain Publisher: CRC Press ISBN: 1351623095 Category : Technology & Engineering Languages : en Pages : 585
Book Description
Flexibility and stretchability of electronics are crucial for next generation electronic devices that involve skin contact sensing and therapeutic actuation. This handbook provides a complete entrée to the field, from solid-state physics to materials chemistry, processing, devices, performance, and reliability testing, and integrated systems development. This work shows how microelectronics, signal processing, and wireless communications in the same circuitry are impacting electronics, healthcare, and energy applications. Key Features: • Covers the fundamentals to device applications, including solid-state and mechanics, chemistry, materials science, characterization techniques, and fabrication; • Offers a comprehensive base of knowledge for moving forward in this field, from foundational research to technology development; • Focuses on processing, characterization, and circuits and systems integration for device applications; • Addresses the basic physical properties and mechanics, as well as the nuts and bolts of reliability and performance analysis; • Discusses various technology applications, from printed electronics to logic and memory devices, sensors, actuators, displays, and energy storage and harvesting. This handbook will serve as the one-stop knowledge base for readership who are interested in flexible and stretchable electronics.
Author: Farid Medjdoub Publisher: MDPI ISBN: 3036505660 Category : Technology & Engineering Languages : en Pages : 242
Book Description
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
Author: Woogeun Rhee Publisher: CRC Press ISBN: 148223436X Category : Technology & Engineering Languages : en Pages : 572
Book Description
Modern transceiver systems require diversified design aspects as various radio and sensor applications have emerged. Choosing the right architecture and understanding interference and linearity issues are important for multi-standard cellular transceivers and software-defined radios. A millimeter-wave complementary metal–oxide–semiconductor (CMOS) transceiver design for multi-Gb/s data transmission is another challenging area. Energy-efficient short-range radios for body area networks and sensor networks have recently received great attention. To meet different design requirements, gaining good system perspectives is important. Wireless Transceiver Circuits: System Perspectives and Design Aspects offers an in-depth look at integrated circuit (IC) design for modern transceiver circuits and wireless systems. Ranging in scope from system perspectives to practical circuit design for emerging wireless applications, this cutting-edge book: Provides system design considerations in modern transceiver design Covers both systems and circuits for the millimeter-wave transceiver design Introduces four energy-efficient short-range radios for biomedical and wireless connectivity applications Emphasizes key building blocks in modern transceivers and transmitters, including frequency synthesizers and digital-intensive phase modulators Featuring contributions from renowned international experts in industry and academia, Wireless Transceiver Circuits: System Perspectives and Design Aspects makes an ideal reference for engineers and researchers in the area of wireless systems and circuits.
Author: Bharat Bhushan Publisher: Springer Nature ISBN: 9819936683 Category : Technology & Engineering Languages : en Pages : 311
Book Description
This open-access book aims to highlight the coming surge of 5G network-based applications and predicts that the centralized networks and their current capacity will be incapable of meeting the demands. The book emphasizes the benefits and challenges associated with the integration of 5G networks with varied applications. Further, the book gathers and investigates the most recent 5G-based research solutions that handle security and privacy threats while considering resource-constrained wireless devices. The information, applications, and recent advances discussed in this book will serve to be of immense help to practitioners, database professionals, and researchers.
Author: Thomas Kürner Publisher: Springer Nature ISBN: 3030737381 Category : Science Languages : en Pages : 510
Book Description
This book describes the fundamentals of THz communications, spanning the whole range of applications, propagation and channel models, RF transceiver technology, antennas, baseband techniques, and networking interfaces. The requested data rate in wireless communications will soon reach from 100 Gbit/s up to 1 Tbps necessitating systems with ultra-high bandwidths of several 10s of GHz which are available only above 200 GHz. In the last decade, research at these frequency bands has made significant progress, enabling mature experimental demonstrations of so-called THz communications, which are thus expected to play a vital role in future wireless networks. In addition to chapters by leading experts on the theory, modeling, and implementation of THz communication technology, the book also features the latest experimental results and addresses standardization and regulatory aspects. This book will be of interest to both academic researchers and engineers in the telecommunications industry.
Author: D. Nirmal
Author: D. Nirmal
Author: Clive Poole
Author: Ming Liu
Author: Mladen Božanić
Author: Muhammad M. Hussain
Author: Farid Medjdoub
Author: Noredine Gherabi
Author: Woogeun Rhee
Author: Bharat Bhushan
Author: Thomas Kürner