III-V Compound Semiconductors PDF Download

Author: Tingkai Li
Publisher: CRC Press
ISBN: 1439815232
Category : Science
Languages : en
Pages : 588

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Book Description
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more

Author: Sorin Voinigescu
Publisher: Cambridge University Press
ISBN: 0521873029
Category : Technology & Engineering
Languages : en
Pages : 921

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Book Description
A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave, and optical fibre circuits using nanoscale CMOS, SiGe BiCMOS, and III-V technologies. Step-by-step design methodologies, end-of chapter problems, and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.

Author:
Publisher: Elsevier
ISBN: 0128133546
Category : Science
Languages : en
Pages : 477

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Book Description
Nanoelectronics: Devices, Circuits and Systems explores current and emerging trends in the field of nanoelectronics, from both a devices-to-circuits and circuits-to-systems perspective. It covers a wide spectrum and detailed discussion on the field of nanoelectronic devices, circuits and systems. This book presents an in-depth analysis and description of electron transport phenomenon at nanoscale dimensions. Both qualitative and analytical approaches are taken to explore the devices, circuit functionalities and their system applications at deep submicron and nanoscale levels. Recent devices, including FinFET, Tunnel FET, and emerging materials, including graphene, and its applications are discussed. In addition, a chapter on advanced VLSI interconnects gives clear insight to the importance of these nano-transmission lines in determining the overall IC performance. The importance of integration of optics with electronics is elucidated in the optoelectronics and photonic integrated circuit sections of this book. This book provides valuable resource materials for scientists and electrical engineers who want to learn more about nanoscale electronic materials and how they are used. - Shows how electronic transport works at the nanoscale level - Demonstrates how nanotechnology can help engineers create more effective circuits and systems - Assesses the most commonly used nanoelectronic devices, explaining which is best for different situations

Author: D. Nirmal
Publisher: CRC Press
ISBN: 0429862539
Category : Science
Languages : en
Pages : 430

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Book Description
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Author: Jie Li
Publisher: Springer
ISBN: 9811072515
Category : Technology & Engineering
Languages : en
Pages : 276

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Book Description
This book gathers a collection of papers by international experts presented at the International Conference on NextGen Electronic Technologies (ICNETS2-2017), which cover key developments in the field of electronics and communication engineering. ICNETS2 encompassed six symposia covering all aspects of the electronics and communications domains, including relevant nano/micro materials and devices. This book showcases the latest research in very-large-scale integration (VLSI) Design: Circuits, Systems and Applications, making it a valuable resource for all researchers, professionals, and students working in the core areas of electronics and their applications, especially in digital and analog VLSI circuits and systems.

Author: Yue Hao
Publisher: CRC Press
ISBN: 1315351838
Category : Computers
Languages : en
Pages : 325

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Book Description
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Author:
Publisher: Academic Press
ISBN: 0128175443
Category : Science
Languages : en
Pages : 540

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Book Description
III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

Author: Guillermo Carpintero
Publisher: John Wiley & Sons
ISBN: 1118920406
Category : Technology & Engineering
Languages : en
Pages : 408

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Book Description
Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap". This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Temperature Operation comprehensively and systematically covers semiconductor-based room temperature operating sources such as photomixers, THz antennas, radiation concepts and THz propagation as well as room-temperature operating THz detectors. The second part of the book focuses on applications such as the latest photonic and electronic THz systems as well as emerging THz technologies including: whispering gallery resonators, liquid crystals, metamaterials and graphene-based devices. This book will provide support for practicing researchers and professionals and will be an indispensable reference to graduate students in the field of THz technology. Key features: Includes crucial theoretical background sections to photomixers, photoconductive switches and electronic THz generation & detection. Provides an extensive overview of semiconductor-based THz sources and applications. Discusses vital technologies for affordable THz applications. Supports teaching and studying increasingly popular courses on semiconductor THz technology.

Author: Shiban Kishen Koul
Publisher: CRC Press
ISBN: 1351021338
Category : Science
Languages : en
Pages : 288

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Book Description
Radio Frequency Micromachined Switches, Switching Networks, and Phase Shifters discusses radio frequency microelectromechanical systems (RF MEMS)-based control components and will be useful for researchers and R&D engineers. It offers an in-depth study, performance analysis, and extensive characterization on micromachined switches and phase shifters. The reader will learn about basic design methodology and techniques to carry out extensive measurements on MEMS switches and phase shifters which include electrical, mechanical, power handling, linearity, temperature stability, reliability, and radio frequency performance. Practical examples included in the book will help readers to build high performance systems/subsystems using micromachined circuits. Key Features Provides simple design methodology of MEMS switches and switching networks including SPST to SP16T switches Gives an in-depth performance study of micromachined phase shifters. Detailed study on reliability and power handling capability of RF MEMS switches and phase shifters presented Proposes reconfigurable micromachined phase shifters Verifies a variety of MEMS switches and phase shifters experimentally

Author: Jutta Kühn
Publisher: KIT Scientific Publishing
ISBN: 3866446152
Category : Power amplifiers
Languages : en
Pages : 264

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Book Description
This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.