Author: Xinpeng Xing
Publisher: Springer
ISBN: 3319665650
Category : Technology & Engineering
Languages : en
Pages : 200
Book Description
This book discusses both architecture- and circuit-level design aspects of voltage-controlled-oscillator (VCO)-based analog-to-digital converters (ADCs), especially focusing on mitigation of VCO nonlinearity and the improvement of power efficiency. It shows readers how to develop power-efficient complementary-metal-oxide-semiconductor (CMOS) ADCs for applications such as LTE, 802.11n, and VDSL2+. The material covered can also be applied to other specifications and technologies. Design of Power-Efficient Highly Digital Analog-to-Digital Converters for Next-Generation Wireless Communication Systems begins with a general introduction to the applications of an ADC in communications systems and the basic concepts of VCO-based ADCs. The text addresses a wide range of converter architectures including open- and closed-loop technologies. Special attention is paid to the replacement of power-hungry analog blocks with VCO-based circuits and to the mitigation of VCO nonline arity. Various MATLAB®/Simulink® models are provided for important circuit nonidealities, allowing designers and researchers to determine the required specifications for the different building blocks that form the systematic integrated-circuit design procedure. Five different VCO-based ADC design examples are presented, introducing innovations at both architecture and circuit levels. Of these designs, the best power efficiency of a high-bandwidth oversampling ADC is achieved in a 40 nm CMOS demonstration. This book is essential reading material for engineers and researchers working on low-power-analog and mixed-signal design and may be used by instructors teaching advanced courses on the subject. It provides a clear overview and comparison of VCO-based ADC architectures and gives the reader insight into the most important circuit imperfections.
Compound Semiconductor Integrated Circuits
Author: Tho T Vu
Publisher: World Scientific
ISBN: 9814486434
Category : Technology & Engineering
Languages : en
Pages : 363
Book Description
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.
Publisher: World Scientific
ISBN: 9814486434
Category : Technology & Engineering
Languages : en
Pages : 363
Book Description
This is the book version of a special issue of the International Journal of High Speed Electronics and Systems, reviewing recent work in the field of compound semiconductor integrated circuits. There are fourteen invited papers covering a wide range of applications, frequencies and materials. These papers deal with digital, analog, microwave and millimeter-wave technologies, devices and integrated circuits for wireline fiber-optic lightwave transmissions, and wireless radio-frequency microwave and millimeter-wave communications. In each case, the market is young and experiencing rapid growth for both commercial and millitary applications. Many new semiconductor technologies compete for these new markets, leading to an alphabet soup of semiconductor materials described in these papers. The book also includes three papers focused on radiation effects and reliability in III-V semiconductor electronics, which are useful for reference and future directions. Moreover, reliability is covered in several papers separately for certain process technologies.
Brain-Machine Interface
Author: Amir Zjajo
Publisher: Springer
ISBN: 3319315412
Category : Technology & Engineering
Languages : en
Pages : 176
Book Description
This book provides a complete overview of significant design challenges in respect to circuit miniaturization and power reduction of the neural recording system, along with circuit topologies, architecture trends, and (post-silicon) circuit optimization algorithms. The introduced novel circuits for signal conditioning, quantization, and classification, as well as system configurations focus on optimized power-per-area performance, from the spatial resolution (i.e. number of channels), feasible wireless data bandwidth and information quality to the delivered power of implantable system.
Publisher: Springer
ISBN: 3319315412
Category : Technology & Engineering
Languages : en
Pages : 176
Book Description
This book provides a complete overview of significant design challenges in respect to circuit miniaturization and power reduction of the neural recording system, along with circuit topologies, architecture trends, and (post-silicon) circuit optimization algorithms. The introduced novel circuits for signal conditioning, quantization, and classification, as well as system configurations focus on optimized power-per-area performance, from the spatial resolution (i.e. number of channels), feasible wireless data bandwidth and information quality to the delivered power of implantable system.
60-GHz CMOS Phase-Locked Loops
Author: Hammad M. Cheema
Publisher: Springer Science & Business Media
ISBN: 9048192803
Category : Technology & Engineering
Languages : en
Pages : 190
Book Description
Abstract This chapter lays the foundation for the work presented in latter chapters. The potential of 60 GHz frequency bands for high data rate wireless transfer is discussed and promising applications are enlisted. Furthermore, the challenges related to 60 GHz IC design are presented and the chapter concludes with an outline of the book. Keywords Wireless communication 60 GHz Millimeter wave integrated circuit design Phase-locked loop CMOS Communication technology has revolutionized our way of living over the last century. Since Marconi’s transatlantic wireless experiment in 1901, there has been tremendous growth in wireless communication evolving from spark-gap telegraphy to today’s mobile phones equipped with Internet access and multimedia capabilities. The omnipresence of wireless communication can be observed in widespread use of cellular telephony, short-range communication through wireless local area networks and personal area networks, wireless sensors and many others. The frequency spectrum from 1 to 6 GHz accommodates the vast majority of current wireless standards and applications. Coupled with the availability of low cost radio frequency (RF) components and mature integrated circuit (IC) techn- ogies, rapid expansion and implementation of these systems is witnessed. The downside of this expansion is the resulting scarcity of available bandwidth and allowable transmit powers. In addition, stringent limitations on spectrum and energy emissions have been enforced by regulatory bodies to avoid interference between different wireless systems.
Publisher: Springer Science & Business Media
ISBN: 9048192803
Category : Technology & Engineering
Languages : en
Pages : 190
Book Description
Abstract This chapter lays the foundation for the work presented in latter chapters. The potential of 60 GHz frequency bands for high data rate wireless transfer is discussed and promising applications are enlisted. Furthermore, the challenges related to 60 GHz IC design are presented and the chapter concludes with an outline of the book. Keywords Wireless communication 60 GHz Millimeter wave integrated circuit design Phase-locked loop CMOS Communication technology has revolutionized our way of living over the last century. Since Marconi’s transatlantic wireless experiment in 1901, there has been tremendous growth in wireless communication evolving from spark-gap telegraphy to today’s mobile phones equipped with Internet access and multimedia capabilities. The omnipresence of wireless communication can be observed in widespread use of cellular telephony, short-range communication through wireless local area networks and personal area networks, wireless sensors and many others. The frequency spectrum from 1 to 6 GHz accommodates the vast majority of current wireless standards and applications. Coupled with the availability of low cost radio frequency (RF) components and mature integrated circuit (IC) techn- ogies, rapid expansion and implementation of these systems is witnessed. The downside of this expansion is the resulting scarcity of available bandwidth and allowable transmit powers. In addition, stringent limitations on spectrum and energy emissions have been enforced by regulatory bodies to avoid interference between different wireless systems.
Broadband Opto-Electrical Receivers in Standard CMOS
Author: Carolien Hermans
Publisher: Springer Science & Business Media
ISBN: 1402062222
Category : Technology & Engineering
Languages : en
Pages : 190
Book Description
This book opens with the basics of the design of opto-electronic interface circuits. The text continues with an in-depth analysis of the photodiode, transimpedance amplifier (TIA) and limiting amplifier (LA). To thoroughly describe light detection mechanisms in silicon, first a one-dimensional and second a two-dimensional model is developed. All material is experimentally verified with several CMOS implementations, with ultimately a fully integrated Gbit/s optical receiver front-end including photodiode, TIA and LA.
Publisher: Springer Science & Business Media
ISBN: 1402062222
Category : Technology & Engineering
Languages : en
Pages : 190
Book Description
This book opens with the basics of the design of opto-electronic interface circuits. The text continues with an in-depth analysis of the photodiode, transimpedance amplifier (TIA) and limiting amplifier (LA). To thoroughly describe light detection mechanisms in silicon, first a one-dimensional and second a two-dimensional model is developed. All material is experimentally verified with several CMOS implementations, with ultimately a fully integrated Gbit/s optical receiver front-end including photodiode, TIA and LA.
75th Anniversary of the Transistor
Author: Arokia Nathan
Publisher: John Wiley & Sons
ISBN: 1394202466
Category : Technology & Engineering
Languages : en
Pages : 469
Book Description
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Publisher: John Wiley & Sons
ISBN: 1394202466
Category : Technology & Engineering
Languages : en
Pages : 469
Book Description
75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.
Low-Power High-Resolution Analog to Digital Converters
Author: Amir Zjajo
Publisher: Springer Science & Business Media
ISBN: 9048197252
Category : Technology & Engineering
Languages : en
Pages : 311
Book Description
With the fast advancement of CMOS fabrication technology, more and more signal-processing functions are implemented in the digital domain for a lower cost, lower power consumption, higher yield, and higher re-configurability. This has recently generated a great demand for low-power, low-voltage A/D converters that can be realized in a mainstream deep-submicron CMOS technology. However, the discrepancies between lithography wavelengths and circuit feature sizes are increasing. Lower power supply voltages significantly reduce noise margins and increase variations in process, device and design parameters. Consequently, it is steadily more difficult to control the fabrication process precisely enough to maintain uniformity. The inherent randomness of materials used in fabrication at nanoscopic scales means that performance will be increasingly variable, not only from die-to-die but also within each individual die. Parametric variability will be compounded by degradation in nanoscale integrated circuits resulting in instability of parameters over time, eventually leading to the development of faults. Process variation cannot be solved by improving manufacturing tolerances; variability must be reduced by new device technology or managed by design in order for scaling to continue. Similarly, within-die performance variation also imposes new challenges for test methods. In an attempt to address these issues, Low-Power High-Resolution Analog-to-Digital Converters specifically focus on: i) improving the power efficiency for the high-speed, and low spurious spectral A/D conversion performance by exploring the potential of low-voltage analog design and calibration techniques, respectively, and ii) development of circuit techniques and algorithms to enhance testing and debugging potential to detect errors dynamically, to isolate and confine faults, and to recover errors continuously. The feasibility of the described methods has been verified by measurements from the silicon prototypes fabricated in standard 180nm, 90nm and 65nm CMOS technology.
Publisher: Springer Science & Business Media
ISBN: 9048197252
Category : Technology & Engineering
Languages : en
Pages : 311
Book Description
With the fast advancement of CMOS fabrication technology, more and more signal-processing functions are implemented in the digital domain for a lower cost, lower power consumption, higher yield, and higher re-configurability. This has recently generated a great demand for low-power, low-voltage A/D converters that can be realized in a mainstream deep-submicron CMOS technology. However, the discrepancies between lithography wavelengths and circuit feature sizes are increasing. Lower power supply voltages significantly reduce noise margins and increase variations in process, device and design parameters. Consequently, it is steadily more difficult to control the fabrication process precisely enough to maintain uniformity. The inherent randomness of materials used in fabrication at nanoscopic scales means that performance will be increasingly variable, not only from die-to-die but also within each individual die. Parametric variability will be compounded by degradation in nanoscale integrated circuits resulting in instability of parameters over time, eventually leading to the development of faults. Process variation cannot be solved by improving manufacturing tolerances; variability must be reduced by new device technology or managed by design in order for scaling to continue. Similarly, within-die performance variation also imposes new challenges for test methods. In an attempt to address these issues, Low-Power High-Resolution Analog-to-Digital Converters specifically focus on: i) improving the power efficiency for the high-speed, and low spurious spectral A/D conversion performance by exploring the potential of low-voltage analog design and calibration techniques, respectively, and ii) development of circuit techniques and algorithms to enhance testing and debugging potential to detect errors dynamically, to isolate and confine faults, and to recover errors continuously. The feasibility of the described methods has been verified by measurements from the silicon prototypes fabricated in standard 180nm, 90nm and 65nm CMOS technology.
Green Computing with Emerging Memory
Author: Takayuki Kawahara
Publisher: Springer Science & Business Media
ISBN: 1461408113
Category : Computers
Languages : en
Pages : 214
Book Description
This volume describes computing innovation using non-volatile memory for a sustainable world. The text presents methods of design and implementation for non-volatile memory, allowing devices to be turned off normally when not in use, yet operate with full performance when needed.
Publisher: Springer Science & Business Media
ISBN: 1461408113
Category : Computers
Languages : en
Pages : 214
Book Description
This volume describes computing innovation using non-volatile memory for a sustainable world. The text presents methods of design and implementation for non-volatile memory, allowing devices to be turned off normally when not in use, yet operate with full performance when needed.
Rad-hard Semiconductor Memories
Author: Calligaro, Cristiano
Publisher: River Publishers
ISBN: 8770220204
Category : Technology & Engineering
Languages : en
Pages : 418
Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects). After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies
Publisher: River Publishers
ISBN: 8770220204
Category : Technology & Engineering
Languages : en
Pages : 418
Book Description
Rad-hard Semiconductor Memories is intended for researchers and professionals interested in understanding how to design and make a preliminary evaluation of rad-hard semiconductor memories, making leverage on standard CMOS manufacturing processes available from different silicon foundries and using different technology nodes. In the first part of the book, a preliminary overview of the effects of radiation in space, with a specific focus on memories, will be conducted to enable the reader to understand why specific design solutions are adopted to mitigate hard and soft errors. The second part will be devoted to RHBD (Radiation Hardening by Design) techniques for semiconductor components with a specific focus on memories. The approach will follow a top-down scheme starting from RHBD at architectural level (how to build a rad-hard floor-plan), at circuit level (how to mitigate radiation effects by handling transistors in the proper way) and at layout level (how to shape a layout to mitigate radiation effects). After the description of the mitigation techniques, the book enters in the core of the topic covering SRAMs (synchronous, asynchronous, single port and dual port) and PROMs (based on AntiFuse OTP technologies), describing how to design a rad-hard flash memory and fostering RHBD toward emerging memories like ReRAM. The last part will be a leap into emerging memories at a very early stage, not yet ready for industrial use in silicon but candidates to become an option for the next wave of rad-hard components. Technical topics discussed in the book include: Radiation effects on semiconductor components (TID, SEE)Radiation Hardening by Design (RHBD) TechniquesRad-hard SRAMsRad-hard PROMsRad-hard Flash NVMsRad-hard ReRAMsRad-hard emerging technologies
High-Performance D/A-Converters
Author: Martin Clara
Publisher: Springer Science & Business Media
ISBN: 3642312292
Category : Technology & Engineering
Languages : en
Pages : 297
Book Description
This book deals with modeling and implementation of high performance, current-steering D/A-converters for digital transceivers in nanometer CMOS technology. In the first part, the fundamental performance limitations of current-steering DACs are discussed. Based on simplified models, closed-form expressions for a number of basic non-ideal effects are derived and tested. With the knowledge of basic performance limits, the converter and system architecture can be optimized in an early design phase, trading off circuit complexity, silicon area and power dissipation for static and dynamic performance. The second part describes four different current-steering DAC designs in standard 130 nm CMOS. The converters have a resolution in the range of 12-14 bits for an analog bandwidth between 2.2 MHz and 50 MHz and sampling rates from 100 MHz to 350 MHz. Dynamic-Element-Matching (DEM) and advanced dynamic current calibration techniques are employed to minimize the required silicon area.
Publisher: Springer Science & Business Media
ISBN: 3642312292
Category : Technology & Engineering
Languages : en
Pages : 297
Book Description
This book deals with modeling and implementation of high performance, current-steering D/A-converters for digital transceivers in nanometer CMOS technology. In the first part, the fundamental performance limitations of current-steering DACs are discussed. Based on simplified models, closed-form expressions for a number of basic non-ideal effects are derived and tested. With the knowledge of basic performance limits, the converter and system architecture can be optimized in an early design phase, trading off circuit complexity, silicon area and power dissipation for static and dynamic performance. The second part describes four different current-steering DAC designs in standard 130 nm CMOS. The converters have a resolution in the range of 12-14 bits for an analog bandwidth between 2.2 MHz and 50 MHz and sampling rates from 100 MHz to 350 MHz. Dynamic-Element-Matching (DEM) and advanced dynamic current calibration techniques are employed to minimize the required silicon area.
Energy-Aware Systems and Networking for Sustainable Initiatives
Author: Kaabouch, Naima
Publisher: IGI Global
ISBN: 1466618434
Category : Business & Economics
Languages : en
Pages : 468
Book Description
"This book covers a great variety of topics such as materials, environment, electronics, and computing, offering a vital source of information detailing the latest architectures, frameworks, methodologies, and research on energy-aware systems and networking for sustainable initiatives"--
Publisher: IGI Global
ISBN: 1466618434
Category : Business & Economics
Languages : en
Pages : 468
Book Description
"This book covers a great variety of topics such as materials, environment, electronics, and computing, offering a vital source of information detailing the latest architectures, frameworks, methodologies, and research on energy-aware systems and networking for sustainable initiatives"--