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Author: Muthukkumar Kadavasal Sivaraman Publisher: ISBN: Category : Languages : en Pages : 192
Book Description
Chemical Mechanical Planarization is one of the most required semiconductor processing modules used in fabrication facilities world wide. Among various surface material removal processes, CMP process is primed for its ability to obtain both local and global planarity on a given surface. The model developed by Fu and Chandra et al, calculates the dishing height based on MRR equations. The model provides a way for step by step material removal based on proportionality parameters like interface pressure, table speed and pattern density. The thesis provides a complete chart for developing a control mechanism for CMP process. The thesis bifurcate the approach into Die scale and Wafer Scale. In die scale, a comprehensive control algorithm is developed based on the MRR equations with pressure and velocity as the control parameter. The model establishes a control over the step height uniformity and upper surface uniformity in both uniform pattern density and varying pattern density surfaces. At wafer scale, an analytical model that relates wafer-pad interface pressure and carrier loading is explained and based on that a FEM analysis is carried out to study the impact of non uniform loading on wafer-pad interface. Both the die scale and wafer models, paved way for developing an integrated control flow chart that can have an impact on the wafer surface at both die scale and wafer scales at the same time. Although, a chart or flow map with necessary models and simulations are in place, to put the entire control mechanism work in a realistic environment there are many other requirements. Like a full fledged pixel or zonal controller should be developed and large scale experimental analysis should be performed based on real time data from manufacturing units.
Author: Muthukkumar Kadavasal Sivaraman Publisher: ISBN: Category : Languages : en Pages : 192
Book Description
Chemical Mechanical Planarization is one of the most required semiconductor processing modules used in fabrication facilities world wide. Among various surface material removal processes, CMP process is primed for its ability to obtain both local and global planarity on a given surface. The model developed by Fu and Chandra et al, calculates the dishing height based on MRR equations. The model provides a way for step by step material removal based on proportionality parameters like interface pressure, table speed and pattern density. The thesis provides a complete chart for developing a control mechanism for CMP process. The thesis bifurcate the approach into Die scale and Wafer Scale. In die scale, a comprehensive control algorithm is developed based on the MRR equations with pressure and velocity as the control parameter. The model establishes a control over the step height uniformity and upper surface uniformity in both uniform pattern density and varying pattern density surfaces. At wafer scale, an analytical model that relates wafer-pad interface pressure and carrier loading is explained and based on that a FEM analysis is carried out to study the impact of non uniform loading on wafer-pad interface. Both the die scale and wafer models, paved way for developing an integrated control flow chart that can have an impact on the wafer surface at both die scale and wafer scales at the same time. Although, a chart or flow map with necessary models and simulations are in place, to put the entire control mechanism work in a realistic environment there are many other requirements. Like a full fledged pixel or zonal controller should be developed and large scale experimental analysis should be performed based on real time data from manufacturing units.
Author: Sutee Eamkajornsiri Publisher: ISBN: Category : Languages : en Pages : 298
Book Description
Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. High and reliable wafer yield is critical in the CMP process; it is dependent upon uniformity of material removal rate across the entire wafer. The focus on this research is the development of control algorithm for CMP process. Wafer-scale and die-scale models are the two scales used in this study. To achieve improvement in wafer yield, three control strategies are formulated with greedy algorithm, method heuristic and non-linear programming in this wafer-scale. The simulation results show that average wafer yield from genetic algorithm is improved, compared to greedy algorithm. Moreover, average wafer yield from non-linear programming is also improved, compared to greedy algorithm. At die-scale, a comprehensive control algorithm is developed based on the MRR equations with interface pressure as a control parameter. The interface pressure is varied spatially and/or temporally across the die. In this concept, three control strategies are developed and studied. The strategies are included spatial pressure control, spatial and temporal pressure control, and look-ahead scheduled pressure control. The simulation results of these three strategies show improvement in the upper surface uniformity; however, look-ahead scheduled pressure control seems to be the promising algorithm.
Author: Sutee Eamkajornsiri Publisher: ISBN: Category : Languages : en Pages : 210
Book Description
Chemical mechanical polishing (CMP) is a planarization process that produces high quality surfaces both locally and globally. It is one of the key process steps during the fabrication of very large scale integrated (VLSI) chips in integrated circuit (IC) manufacturing. CMP consists of a chemical process and a mechanical process being performed together to reduce height variation across a wafer. High and reliable wafer yield, which is dependent upon uniformity of the material removal rate across the entire wafer, is of critical importance in the CMP process. In this thesis, the wafer pad contact is modeled as the indentation of a rigid indenter on an elastic half-space. The model predictions are first verified against experimental observations. Simulation results for wafer yield under open loop processing conditions are presented. Wafer curvature is identified as a key design variable influencing the spatial distribution of the material removal rate. The load control, the curvature control, the combined curvature and load strategies are investigated for improving the wafer yield. It utilizes an objective function based on minimizing a moment function that represents the wafer curvature and the height of the oxide layer left for material removal. Simulation results indicate that curvature control can improve wafer yield significantly, and is more effective that just the load control.
Author: Babu Suryadevara Publisher: Woodhead Publishing ISBN: 0128218193 Category : Technology & Engineering Languages : en Pages : 650
Book Description
Advances in Chemical Mechanical Planarization (CMP), Second Edition provides the latest information on a mainstream process that is critical for high-volume, high-yield semiconductor manufacturing, and even more so as device dimensions continue to shrink. The second edition includes the recent advances of CMP and its emerging materials, methods, and applications, including coverage of post-CMP cleaning challenges and tribology of CMP. This important book offers a systematic review of fundamentals and advances in the area. Part one covers CMP of dielectric and metal films, with chapters focusing on the use of current and emerging techniques and processes and on CMP of various materials, including ultra low-k materials and high-mobility channel materials, and ending with a chapter reviewing the environmental impacts of CMP processes. New content addressed includes CMP challenges with tungsten, cobalt, and ruthenium as interconnect and barrier films, consumables for ultralow topography and CMP for memory devices. Part two addresses consumables and process control for improved CMP and includes chapters on CMP pads, diamond disc pad conditioning, the use of FTIR spectroscopy for characterization of surface processes and approaches for defection characterization, mitigation, and reduction. Advances in Chemical Mechanical Planarization (CMP), Second Edition is an invaluable resource and key reference for materials scientists and engineers in academia and R&D. Reviews the most relevant techniques and processes for CMP of dielectric and metal films Includes chapters devoted to CMP for current and emerging materials Addresses consumables and process control for improved CMP, including post-CMP
Author: A. Kumar Publisher: ISBN: Category : Technology & Engineering Languages : en Pages : 330
Book Description
Technology requirements associated with the progressive scaling of devices for future technology nodes, coupled with the aggressive introduction of new materials, places tremendous demands on chemical-mechanical polishing. The goal of this 2005 book, which is part of a popular series from MRS, is to bring together experts from a broad spectrum of research and technology groups currently working on CMP, to review advances made, and to offer a comprehensive discussion of future challenges that must be overcome. The book shows trends in the development of consumables, process modules, tool designs, process integration, modeling, defect characterization, and metrology. Topics include: planarization processes and applications; consumables -CMP pads and slurries; CMP equipment and metrology; and CMP modeling and simulation.
Author: M.R. Oliver Publisher: Springer Science & Business Media ISBN: 3662062348 Category : Technology & Engineering Languages : en Pages : 432
Book Description
This book contains a comprehensive review of CMP (Chemical-Mechanical Planarization) technology, one of the most exciting areas in the field of semiconductor technology. It contains detailed discussions of all aspects of the technology, for both dielectrics and metals. The state of polishing models and their relation to experimental results are covered. Polishing tools and consumables are also covered. The leading edge issues of damascene and new dielectrics as well as slurryless technology are discussed.
Author: Muthukkumar Kadavasal Sivaraman
Author: Muthukkumar Kadavasal Sivaraman
Author: Sutee Eamkajornsiri
Author: Sutee Eamkajornsiri
Author: Babu Suryadevara
Author: Sudipta Seal
Author: A. Kumar
Author: R. L. Opila
Author: M.R. Oliver
Author: Iqbal Ali
Author: Yongsik Moon