III-N Ultraviolet Detectors for Space Applications PDF Download

Author:
Publisher: Pawel E. Malinowski
ISBN: 9460183735
Category :
Languages : en
Pages : 181

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Author: Anatoliy Evtukh
Publisher: John Wiley & Sons
ISBN: 1119037964
Category : Technology & Engineering
Languages : en
Pages : 472

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Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: • In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. • Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. • Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. • New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.

Author: Sorin Cristoloveanu
Publisher: World Scientific
ISBN: 9814468045
Category : Technology & Engineering
Languages : en
Pages : 335

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Book Description
Frontiers in Electronics contains the selected best papers presented at the Workshop on Frontiers in Electronics (WOFE-07). This meeting was the fifth in the series of WOFE workshops, and strongly reinforced the tradition of scientific quality and visionary research. The issues addressed ranged from THz and infrared electronics to nanoelectronics and photonics. The papers focused on the fabrication, characterization and applications of nanodevices; wide band gap structures; and state-of-the-art FETs. The participants also discussed the device physics and processing issues including aspects related to SOI and germanium-on-insulator technologies, TFTs, and advanced CMOS and MOSFETs. It is this cross-pollination between different but related fields that made this conference very special.This book, which goes beyond the publication of the WOFE Proceedings, includes full-length invited papers selected at the conference and reviewed by international leaders. The book is divided into four distinct sections, with the common denominator throughout being the “nano-device”, present under various metamorphoses in the wide CMOS and optoelectronics arena./a

Author: Gaudenzio Meneghesso
Publisher:
ISBN: 9788861290884
Category :
Languages : en
Pages : 436

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Author: Rüdiger Quay
Publisher: Springer Science & Business Media
ISBN: 3540718923
Category : Technology & Engineering
Languages : en
Pages : 492

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This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Author: Stephen Pearton
Publisher: Springer Science & Business Media
ISBN: 3642235212
Category : Technology & Engineering
Languages : en
Pages : 497

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Book Description
The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

Author: Serge Oktyabrsky
Publisher: Springer Science & Business Media
ISBN: 1441915478
Category : Technology & Engineering
Languages : en
Pages : 451

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Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Author: Sorin Cristoloveanu
Publisher: World Scientific
ISBN: 9814522058
Category : Technology & Engineering
Languages : en
Pages : 241

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Book Description
Frontiers in Electronics is divided into four sections: advanced terahertz and photonics devices; silicon and germanium on insulator and advanced CMOS and MOSHFETs; nanomaterials and nanodevices; and wide band gap technology for high power and UV photonics. This book will be useful for nano-microelectronics scientists, engineers, and visionary research leaders. It is also recommended to graduate students working at the frontiers of the nanoelectronics and microscience.

Author: John L. B. Walker
Publisher: Cambridge University Press
ISBN: 0521760100
Category : Technology & Engineering
Languages : en
Pages : 705

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This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.

Author:
Publisher:
ISBN:
Category : Aeronautics
Languages : en
Pages : 836

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